MA10701 SCHOTTKY DIODE Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X701 (MA10701) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For high frequency rectification 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 VRRM Forward current (Average)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X701 (MA10701) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For high frequency rectification 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05

MA3X701

Abstract: MA10701
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X701 (MA10701) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For high frequency rectification 0.16+0.10 –0.06 2 (0.65) ue pl d in an c se ed lud pl

50Hz sine wave generator

Abstract: MA10701 MA10701 SCHOTTKY diode
Contextual Info: MA111 Schottky Barrier Diodes SBD MA10701 Silicon epitaxial planer type Unit : mm +0.2 For high-frequency rectification 2.8 –0.3 +0.25 1.5 –0.05 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 +0.2 IF(AV)= 700mA rectification possible 1 0.95 ● type package (3-pin)

MA10701

Abstract: MA3X701
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X701 (MA10701) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For high frequency rectification 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05

Contextual Info: Schottky Barrier Diodes SBD MA3X701 (MA10701) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C 1.9±0.1 Symbol Rating Unit VR 30 V Repetitive peak reverse-voltage

MA3X701

Contextual Info: Schottky Barrier Diodes SBD MA3X701 (MA10701) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C 1.9±0.1 Symbol Rating Unit VR 30 V Repetitive peak reverse-voltage

MA10701

Abstract: MA3X701
Contextual Info: Schottky Barrier Diodes SBD MA3X701 (MA10701) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 2.90+0.20 –0.05 Symbol Rating Unit VR 30 V Repetitive peak reverse-voltage VRRM 30 V Average forward current

MA10701

Abstract: MA3X701
Contextual Info: Schottky Barrier Diodes SBD MA3X701 (MA10701) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 0.65 ± 0.15 1.5 − 0.05 1 0.95 3 + 0.1 0.4 − 0.05 + 0.2 2.9 − 0.05 • Mini type 3-pin package • Allowing to rectify under (IF(AV) = 700 mA) condition

MA10701

Abstract: MA3X701
Contextual Info: Schottky Barrier Diodes SBD MA3X701 (MA10701) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For high frequency rectification 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 • Absolute Maximum Ratings Ta = 25°C Unit 10˚ VR 30 V Repetitive peak reverse voltage

MA10701

Abstract: MA3X701
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X701 (MA10701) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For high frequency rectification 0.16+0.10 –0.06 Th an W is k y Th e a pro ou Fo an po du fo

ir d10

Abstract: AMA780 ir d10 d10 D10D26
Contextual Info: Diodes • Schottky Barrier Diodes SBD (For Small Current) (continued) Application <M ) 30 VF max. (V) 0.55 15 Mini (3 pins) D10 AMA791 * 30 0.55 15 Mini (3 pins) D10 AMA792 * 30 0.55 15 S Mini (3 pins) D5 A M A792W A * 30 0.55 15 S Mini (3 pins) D5 A M A792W K *

DO-34

Abstract: MA723 MA782 ma10701 AMA785 AMA786WK AMA787 AMA791 AMA792 AMA792WA
Contextual Info: Diodes • Schottky Barrier Diodes SBD (For Small Current) (continued) Application (mA) 0.55 15 Mini (3 pins) D10 A M A 791 * 0.55 15 Mini (3 pins) D10 S Mini (3 pins) D5 AM A792 * 30 0.55 15 A M A 792W A *• 30 0.55 15 S Mini (3 pins) D5 A M A 792W K 30

MA10701 SCHOTTKY diode

Abstract: MA741
Contextual Info: Package SS Mini Type 2 Pin D78 SS Mini Type 3 Pin (D2) S Mini Type 2 Pin (03) S Mini Type 3 Pin (D5) S Mini Type 4 Pin (D7) 5 Mini Type 6 Pin (D10) Mini Type 2 Pin (D11) Mini Type 3 Pin (D12) Mini Type 4 Pin (014) Mini Type 6 Pin (D16) Mini Power <D17) New Mini

diode cross reference 1s1555

Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
Contextual Info: 2000.8 CROSS REFERENCE •スイッチングダイオード Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555, 1S1588 1SS104 1S1553, 1S1554 MHD LLD NEC 1S953 MATSUSHITA MA150 MA161 1S1586, 1S1587 1S954, 1S955 1SS176 1SS202 1SS178, 1SS177 1SS202 1 DLS1585,

FC54M

Abstract: FC53M diode cross reference 1s1555 diode cross reference 1s2473 RLS135 "cross reference" 1SS1586 1SS211 sanken SE014 1SS2021 toshiba diode "do-41"
Contextual Info: CROSS • — K - f -y _ REFERENCE S w itc h in g d io d e s Marker TOSHIBA NEC MATSUSHITA ROHM PMUPS HITACHI Factage 1SS172 1SS267 DO-41 1S1555, 1S1588 MA150 1S953 1S2472, 1S2473 1S2076 1S2787 1SS104 MA161 1S1553, 1S1554 1S2471,1SS41 1S2076A 1S2092, 1S2460

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the