MA-COM SOT Search Results

071CN

Contextual Info: JtiK " >' P54/74FCT632/U/A/B P54/74PCT632/U/A/B ULTRA HIGH SPEED 32-BIT ERROR DETECTION AND CORRECTION UNITS 7$ FEATURES • Function, Pinout, and Drive Compatible with the FCT, F Logic and 74AS632 ■ 24 mA Sink Current (Com’l), 12 mA (Mil) 2.6 mA Source Current (Com’l), 1 mA (Mil)

ACS1086S equivalent

Abstract: ACS108 equivalent acs1086s ACS108-6S application acs1086s ACS1-086S ACS1086SG ACS108-6SN ACS108-6SX ACS108-6SA
Contextual Info: ACS108-6S AC switch family Transient voltage protected AC Switch ACS Main product characteristics IT(RMS) 0.8 A VDRM/VRRM 600 V IGT 10 mA • Overvoltage protection by crowbar technology ■ High noise immunity - static dV/dt > 500 V/µs COM COM G COM

ACS1086S equivalent

Abstract: ACS108 equivalent application acs1086s ACS 08 6s ACS1-086S acs1086s ACS108-6S ACS108-6SN ACS108-6SX ACS108-6SA-AP
Contextual Info: ACS108-6S AC switch family Transient voltage protected AC Switch ACS Main product characteristics IT(RMS) 0.8 A VDRM/VRRM 600 V IGT 10 mA • Overvoltage protection by crowbar technology ■ High noise immunity - static dV/dt > 500 V/µs COM COM G COM

Contextual Info: Tem ic Semiconductors SOD8O SOT23 & D035 QuadroMELF Small-Signal Dual Diodes in SOT23 Package Vrr M V 70 70 70 Part Number BAV70 BAV99 BAW56 Com m on cathode Connected in series Com m on anode Electrical Characteristics Vp at Ip I r at V r V V lA mA <1 <2.5

3904

Abstract: tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23
Contextual Info: SIEM EN S NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-em itter saturation voltage SMBT 3904 • Com plem entary type: SM BT 3906 PNP Type Marking Ordering Code (tape and reel) PinCContigui ation 1 3 2 Package1*

BCV65

Abstract: BCV65B SOT143B pnp matched pair
Contextual Info: Philips Semiconductors Product specification NPN/PNP general purpose transistors BCV65; BCV65B PINNING FEATURES • Low current max. 100 mA PIN • Low voltage (max. 30 V). 1 ,3 APPLICATIONS DESCRIPTION co lle cto r 2 com m on base 4 com m on em itter • G eneral purpose sw itching and am plification.

L2 sot26

Contextual Info: MAAL-007304 Low Noise Amplifier 0.5 - 3.0 GHz M/A-COM Products Rev. V2 Functional Schematic Features • • • • • • • Low Noise Figure: 0.7 dB at 2.3 GHz Single +3 to +5 V Supply Bias Low Current: 11.5 mA typical Lead-Free SOT-26 Plastic Package

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistors FEATURES BF820; BF822 PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). 1 base 2 em itter 3 collector APPLICATIONS DESCRIPTION • Telephony and professional com m unication equipment.

transistor marking fl

Abstract: BF822W
Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistors BF820W; BF822W FEATURES PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). 1 base 2 em itter 3 collector APPLICATIONS DESCRIPTION • Telephony and professional com m unication equipment.

BF777W

Abstract: BFR93W BF606A BFE193 BFQ69 BFP183 BFS480 BFW92 sot23 BF777 BF606
Contextual Info: RF Bipolar Transistors For com plete package outlines, refer to pages PO-1 through PO-6 T yp e M a x im u m Ratings VCEO 'c N=NPN /t V mA mW GHz dB 'c mA VCE / V MHz 15 40 20 35 35 20 25 30 30 12 12 12 12 20 20 20 20 40 40 12 12 12 12 15 15 12 15 12 15 16

Contextual Info: Philips Semiconductors Preliminary specification 2PC4617J NPN general purpose transistor FEATURES PINNING • P ow er dissipation com parable to S O T23 PIN DESCRIPTION • Low output capacitance 1 base • Low saturation voltage VcEsat 2 e m itte r • Low curren t max. 100 mA

TSA5511 programming

Abstract: application tsa5511 tuner uhf Ghz tsa5511 TSA5511T HKC Oscillator tsa5511 MCD236 N13x2 4 MHz crystal G3JI
Contextual Info: Philips Sem iconductor* RF Com m unication* Product* Prelim inary cpeclflcatlon 1.3GHz bi-directional i2C bus controlled synthesizer TSA5511 FEATURES | Lg • Complete 1.3 GHz single chip system fl i d u n i BUS! [_ • Low power 5 V, 35 mA • l2C-bus programming

MAAL-007306

Contextual Info: MAAL-007306 Low Noise Amplifier 0.5 - 2.0 GHz M/A-COM Products Rev. V1 Functional Schematic Features • • • • • • • • Low Noise Figure: 0.7 dB at 1.7 GHz Single Positive Bias High OIP3: 27 dBm at 90 mA Current Tunable over wide frequency range

Contextual Info: MAAL-007306 Low Noise Amplifier 0.5 - 2.0 GHz M/A-COM Products Rev. V2 Functional Schematic Features • • • • • • • • Low Noise Figure: 0.7 dB at 1.7 GHz Single Positive Bias High OIP3: 27 dBm at 90 mA Current Tunable over wide frequency range

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistors MPSA42; MPSA43 FEATURES PINNING • Low curren t max. 100 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 em itter • V ideo • T elephony • P rofessional com m unication equipm ent.

FZT600

Abstract: FZT603
Contextual Info: SOT223 DARLINGTON TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter v CE|sat Max VcBO V v CEO V ^C cont) A <o h :E Type 160 140 2.0 2.0 Min/M ax Typ MHz t,t Com plem ent 1000/10 150- - 150 FZT705 150 FZT704 at lc / VCE m A / Volts Volts at l c / Iß mA

Contextual Info: SOT223 DARLINGTON TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter v CE sa t Max h -E Type V lc(cont) A Ptot W M in/M ax 160 140 2.0 2.0 FZT605 140 120 2.0 2.0 FZT604 120 100 2.0 2.0 v CBO v CEO V FZT600 fT Typ MHz Com plem ent - at Iq / V ce mA / Volts

Contextual Info: SOT223 SWITCHING TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter ^tot W M in/M ax 0.6 1.5 30 0.6 -60 -60 FZT2907 -60 FZT4403 -40 v CBO v CEO V V FZT2222A 75 40 FZT2222 60 FZT2907A v CE sa t Max h :E i< _CJ Type h Typ MHz Com plem ent at lc / Vce mA / Volts

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistor PMBTA42 FEATURES PINNING • Low curren t max. 100 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • T elepho ny and professional com m unication equipm ent.

Contextual Info: Philips Semiconductors Product specification PNP medium frequency transistor BF824 FEATURES PINNING • Low curren t max. 25 mA PIN • Low voltage (max. 30 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • RF stages in FM front-ends in com m on base

fzt458

Contextual Info: SOT223 HIGH VOLTAGE TRANSISTORS Pinout : 1-Base, 2814-Collector, 3-Emitter Type hFE V ^C cont A Plot W M in/M ax 400 0.5 2.0 v CBO v CEO V 400 v CE(sat) M a x at lc / VCE m A / Volts Volts at lc / Ib mA 50/- 100/5 0.5 100/10 h Typ MHz Com plem ent NPN FZT658

SERVICE MANUAL tv TCL

Abstract: ED06 ED08 internal circuit diagram for ic 4047 C161 C161RI C166 SAB-C161RI-LF SAB-C161RI-LM SAF-C161RI-LM
Contextual Info: SIEMENS Data Sheet 0198 Advance Information This Material C o p yright ed By Its Respec tive Ma nufac turer C161RI Revision History: 1998-01 A dvance Inform ation P revious Releases: 1997-12 A dvance Inform ation P age S ubjects 7 RSTIN description com pleted with bidirectional reset.

Contextual Info: MAAL-007306 Part Status: Preliminary V1P Low Noise Amplifier 0.5 - 2.0 GHz M/A-COM Products RoHS Compliant Functional Schematic Features • • • • • • • • Low Noise Figure: 0.7 dB at 1.7 GHz Single +3 to +5 V Supply Voltage High OIP3 = 28 dBm at 90 mA Current

marking code IC .ztz

Abstract: ZtZ MARKING marking code ER transistor
Contextual Info: Philips Semiconductors Preliminary specification NPN general purpose double transistor FEATURES PUMX1 PINNING • Low curren t max. 100 mA PIN • Low voltage (max. 40 V) 1 ,4 e m itte r TR1 ; TR 2 2, 5 base TR1 ; TR 2 3, 6 co lle cto r TR2; TR1 • R educes num ber of com ponents and boardspace.