MA 785 A Search Results

H500TB

Abstract: H500TBXX thyristor phase control rectifier 1200V 100 A THYRISTOR Hirect thyristor control circuit thyristor sec 720
Contextual Info: PHASE CONTROL THYRISTOR H500TBXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-1600 V 125 200-1600 V 125 125 80 80 mA mA 500 A 785 A 12 kA 720 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive peak reverse voltage

DL-7140-201S

Abstract: 7587 infrared Laser diode
Contextual Info: Ordering number : ENN7587 Infrared Laser Diode DL-7140-201S DL-7140-201S Infrared Laser Diode Features Package Dimensions Tolerance : ±0.2 : mm • Wavelength : 785 nm Typ. • Low threshold current : Ith = 30 mA (Typ.) • High operating temperature : 70 mW (CW) at 60°C

Contextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 60 MHz Rated Current ΔT = 40K DC Resistance Type Value Unit Tol. Z 785 Ω ±25% Z 1300 Ω typ. IR RDC 3000 mA max. 0.05

DL-3144-007S

Abstract: 62503 DL 3144 infrared Laser diode
Contextual Info: Ordering number : ENN7590 Infrared Laser Diode DL-3144-007S DL-3144-007S Infrared Laser Diode Features Package Dimensions • Wavelength • Low threshold current • Small package Tolerance : ±0.2 : mm Unit 5.6-0.025 : 785 nm Typ. : Ith = 25 mA (Typ.)

Contextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 60 MHz Rated Current ΔT = 40K DC Resistance Type Value Unit Tol. Z 785 Ω ±25% Z 1300 Ω typ. IR RDC 3000 mA max. 0.05

LD 7577 ps

Abstract: ld 7577 DL-4034-154S 62503 7577 laser diode for printer
Contextual Info: Ordering number : ENN7577 Infrared Laser Diode DL-4034-154S DL-4034-154S Infrared Laser Diode Features Package Dimensions • Wavelength • Low threshold current • Low droop : 785 nm Typ. : Ith = 30 mA (Typ.) : less than 10% Tolerance : ±0.2 Unit : mm

DC200 silicone oil

Contextual Info: INDUSTRIAL PRESSURE TRANSMITTER MADE IN USA WITH RUGGED WEATHERPROOF NEMA-4X ENCLOSURE SPECIFICATIONS PX726 Flush Diaphragm $ 785 PX725=4.1 PX726=5.0 3.5 PX725 1/2-14 NPT Excitation: 15-36 Vdc Output: 4-20 mA 2-wire PX726 CAUTION PX725 1'' Accuracy: ±0.15% of calibrated span

DL-4140-001

Abstract: DL-4140-001S diode 7579 5mw 788 nm ENN7579
Contextual Info: Ordering number : ENN7579 Infrared Laser Diode DL-4140-001S DL-4140-001S Infrared Laser Diode Features Package Dimensions • Wavelength • Low threshold current • Small package Tolerance : ±0.2 : mm Unit 5.6-0.025 : 785 nm Typ. : Ith = 30 mA (Typ.)

TCA785

Abstract: tca 780 CI TCA 785 tca780 siemens tca-785 TCA 785 tc 785 siemens siemens lsl TCA 785 IC application tca 780
Contextual Info: SIEMENS Phase Control IC TCA 785 Bipolar 1C Features • • • • • • • • Reliable recognition of zero passage Large application scope May be used as zero point switch LSL compatible Three-phase operation possible 3 ICs Output current 250 mA Large ramp current range

dlop 06

Abstract: dlop
Contextual Info: DL-LS2003cgsg> Infrared Laser Diode Features • • • • • Tolerance : ± 0 .2 Unit : mm Package ¿5.6—0.03 Wavelength : 785 nm Typ. Low threshold cu rren t: Ith = 30 mA (Typ.) Beam N um ber: 2 Beam Distance : 100 [¿m Small package : 0 5.6mm ¿ 4 .4

THERMAL RUNAWAY IN RECTIFIER

Contextual Info: 67 785 94 O LT RON ÏC S INC 00003 3 i c o t - û v < y Data Sheet No. 68202 Power Schottky Diodes 73 Tremont St. • Boston, MA 02108 • Tel. 617 354-6534 Semiconductor O.E.M. 30 AIWP, 75 Volt Power Schottky Rectifier MC 3075 DESCRIPTION The Oltronics MC 3075 is a Schottky rectifier of superior performance due to its stability at high

MX-3192-08A

Abstract: MX-3192-05A MX-3192-10A MX-3192-11A molex mx
Contextual Info: www.i-t.su info@i-t.su electronics òåë: 095 785-48-05, 739-09-95 Âåðòèêàëüíûå ãíåçäà KK "ïàïà" øàã 3,96 ìì, íà ïëàòó Maêñèìàëüíûé òîê Maêñ. íàïðÿæåíèå Maêñ. ñîïðîòèâëåíèå êîíòàêòîâ

L90-12W

Abstract: L90-24W l90 24 L90-24 3020A l9024
Contextual Info: www.i-t.su info@i-t.su òåë: 095 785-48-05, 739-09-95 electronics Ðåëå ñåðèè L90 íà áîëüøîé òîê Èìåþò îäèí ïåðåêëþ÷àþùèé êîíòàêò òèïà SPDT. Maòåðèàë êîíòàêòà : AgCdO Òîê êîíòàêòà

LB4H-24DS

Abstract: PY14-02 220-240VAC
Contextual Info: www.i-t.su info@i-t.su òåë: 095 785-48-05, 739-09-95 electronics Påëå ñåðèè LB4H xåòûðåõïîëþñíûå ðåëå ñ ïåðåêëþ÷àþùèìè êîíòàêòàìè 4PDT. Maòåðèàë êîíòàêòîâ : AgCdO Òîê êîíòàêòà

Contextual Info: m Laser Diodes SbE T> 7020* ^ ROHM CO 0007170 Tbfa « R H M LTD “M-c [Laser Diodes RLD-series laser diodes developed and manufactured by ROHM have a striking feature: a very small optical and el­ ectrical characteristic dispersion, which has been reduced to

Contextual Info: RUGGED VOLTAGE OUTPUT FLUSH DIAPHRAGM PRESSURE TRANSDUCER STAINLESS STEEL PROTECTION FOR INDUSTRIAL APPLICATIONS PX510 Series Shown with AD-1SS Adapter. See Page B-43. 0-5 to 0-10,000 psig ߜ Stainless Steel Construction for Corrosion Resistance ߜ Quick Disconnect

M9-785-0150-S5P

Abstract: M9-785-0150-S50 M9-785-0080-S50 c2785 785nm 785nm diode
Contextual Info: Product Specifications Features 785 nm Single-Mode Laser Diodes • Up to 150 mW CW output power. Description: • High Quality, Reliability, Performance High brightness, high quality, and high reliability are the foundation of our single mode product line. Axcel’s 785 nm single mode

C2785

Abstract: 785nm
Contextual Info: Product Specifications Features 785 nm Single-Mode Laser Diodes • Up to 150 mW CW output power. • High Quality, Reliability, Performance Description: High brightness, high quality, and high reliability are the foundation of our single mode product line. Axcel’s 785 nm single mode laser diodes

NE5520379A

Abstract: NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

250GX-0300-55-22

Abstract: MCGPR63V477M13X26-RH ATC100B360JT500XT ATC100B1R0CT500X MRF6VP121KH ATC100B1R0CT500XT ATC100B3R6CT500XT ATC100B100JT500X JESD22-A114 MRF6VP121KHR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 2, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed

TXC10 M 60 TRIAC

Abstract: TXC10M60 TXC10 M 60 siemens tca-785 TCA 785 tca 780 TXC10 TCA780 TCA 420 TXC10 m
Contextual Info: c i r M r i t i 3 IE IV IC IÌI Phase Control 1C TCA 785 Bipolar 1C Features A V o rI UVyl\yf^ onnnn 7 Q Ir W n naccanQ ID l o O lI iI a UH U II O I IiItLIi n Wn I I rW\ iI ¿.O • • • • • • Large application scope May be used as zero point switch

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

ml976h6f

Contextual Info: 1 OPTICAL ELEMENTS ILASER DIODES Max. ratings Type No, Application Tc Tsto re i i*C lop Vop *P mA) (V) (nm) ODD 35 -40 to + 60 -40 to + 100 M L4XX23 LBP .5 -40 to + 60 M L4XX26 LBP 8 M L 6 X X I4 ODD M L6XX15 M L6XX16 (mWi sa 9X fdeoì Wagi tm * 2 (mA) typ