M8050-TRANSISTOR NPN Search Results

M8050-TRANSISTOR NPN Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RX1214B130YI		Rochester Electronics LLC	NPN microwave power transistor	PDF
MX0912B251Y		Rochester Electronics LLC	NPN microwave power transistor	PDF
RZ1214B35YI		Rochester Electronics LLC	NPN microwave power transistor	PDF
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet

M8050-TRANSISTOR NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
M8050 Abstract: m8050 NPN equivalent M8050 equivalent Contextual Info: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 MARKING C B Top View 1 Product Marking Code M8050 Y11	Original	M8050 200mW OT-23 M8050-L M8050ation 800mA, 30MHz 25-Nov-2010 M8050 m8050 NPN equivalent M8050 equivalent	PDF
M8050 Contextual Info: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 C B Top View MARKING 1 Product Marking Code M8050 Y11	Original	M8050 200mW OT-23 M8050-L 800mA, 30MHz 800mA M8050	PDF
M8050-TRANSISTOR Abstract: M8050 m8050 NPN equivalent M8050-TRANSISTOR NPN Contextual Info: M8050 M8050 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 1 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃	Original	M8050 100mA 800mA 800mA, 30MHz M8050-TRANSISTOR M8050 m8050 NPN equivalent M8050-TRANSISTOR NPN	PDF
m8050 Abstract: y11 transistor M8050-TRANSISTOR transistor y11 sot-23 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8050 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 M8050 100mA 800mA 800mA, 30MHz m8050 y11 transistor M8050-TRANSISTOR transistor y11 sot-23	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M8050 SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 M8050 OT-23	PDF
M8050-TRANSISTOR Abstract: datasheet of ic 555 IC 555 M8050-TRANSISTOR NPN datasheet ic 555 m8050 f-30MHz ic 4700 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8050 TRANSISTOR （ NPN ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 1 A Collector-base voltage V BR CBO : 40	Original	M8050 O--92 30MHz 270TYP 050TYP M8050-TRANSISTOR datasheet of ic 555 IC 555 M8050-TRANSISTOR NPN datasheet ic 555 m8050 f-30MHz ic 4700	PDF
m8050 Abstract: M8050-TRANSISTOR To92 transistor m8050 NPN equivalent Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8050 TO-92 TRANSISTOR NPN FEATURES Power dissipation 1.EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. COLLECTOR Symbol Parameter 2. BASE Value Units VCBO	Original	M8050 100mA 800mA 800mA, 30MHz m8050 M8050-TRANSISTOR To92 transistor m8050 NPN equivalent	PDF
y11 transistor Abstract: transistor y11 sot-23 .y11 transistor Contextual Info: M8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y11 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	M8050 OT-23 OT-23 100mA 800mA 800mA, 30MHz y11 transistor transistor y11 sot-23 .y11 transistor	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 M8050 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation m W (Tamb=25℃) 2.4 1.3 0.95 0.4 2.9 Collector current ICM: 1 A Collector-base voltage	Original	OT-23 OT-23 M8050 100mA 800mA 800mA, 30MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 M8050 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR m W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.8 A ICM: Collector-base voltage 40 V V(BR)CBO:	Original	OT-23 OT-23 M8050 100mA 800mA 800mA, 30MHz	PDF
Transistor S8550 2TY Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250	Original	OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6	PDF
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882	PDF
FX3U-48M Abstract: FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M Contextual Info: MITSUBISHI ELECTRIC MELSEC FX Series Programmable Logic Controllers User's Manual Hardware FX3U Base Units and Extension Blocks Art. no: 168590 01062007 Version E MITSUBISHI ELECTRIC INDUSTRIAL AUTOMATION Safety Precautions (Read these precautions before use.)	Original	D-40880 168590-E FX3U-48M FX3U-32M a6tbxy36 FX3U-64M FX2N 64mr manual FX3U-80M pid temprature controller FX2N-16EX JY997D16901 FX3U-128M	PDF
secos gmbh Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers	Original	SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649	PDF