M779B Search Results
M779B Equivalents
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M779B Price and Stock
Anatech Electronics Inc AM779B1192CER FILTER 779MHZ BAND PASS |
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AM779B1192 | Bulk | 39 | 10 |
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ams OSRAM Group LG M779-BIN1 E-1-0-2 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LG M779-BIN1 E-1-0-2 | 11,800 |
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ams OSRAM Group LG M779-BIN1 F-1-0-2 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LG M779-BIN1 F-1-0-2 | 11,800 |
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M779B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 5 f GEC PLESSEY S e p t e m b e r 19 9 5 S E M I C O N D U C T O R S DS4216-3.2 DF754 FAST RECOVERY DIODE KEY PARAMETERS V RRM 3500V 865A Jf AV 8000A FSM 1000^C Qr APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding. |
OCR Scan |
DS4216-3 DF754 M779b. 37bflS22 | |
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Contextual Info: së GEC P L E S S E Y o c o t b e r i 996 S E M I C O N D U C T O R S DS4214-3.4 DF654 FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VBRM 3500V 675A F AV 6000A FSM 900|iC 6.5(is • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ |
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DS4214-3 DF654 DF654 M779b. | |
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Contextual Info: SEPTEMBER 1996 DSF11060SG DS4217-2.3 DSF11060SG FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits. FEATURES ■ Double Side Cooling. ■ High Surge Capability. ■ Low Recovery Charge. |
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DSF11060SG DS4217-2 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. | |
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Contextual Info: DF654 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4214 - 3.5 Supersedes O ctober 1996 version, DS4214 - 3.4 March 1998 • Induction Heating. KEY PARAMETERS V RRM 3500V ■ A.C. M otor Drives. Jf AV ■ Inverters And C hoppers. ■ W elding. ■ High Frequency R ectification. |
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DF654 DS4214 DF654 M779b. | |
Tag 225-600
Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
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DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes | |
Thyristor 865A
Abstract: AN4506 AN4839 AN4853 DF754 sine wave ups designing
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DF754 DS4216-3 DS4216-4 DF754 M779b. Thyristor 865A AN4506 AN4839 AN4853 sine wave ups designing | |
DS4217-2
Abstract: ds4217 AN4506 DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60 DSF110
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DSF11060SG DS4217-2 DS4548 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. ds4217 AN4506 DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60 DSF110 | |
DF685
Abstract: DS4303-1
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DF685 DS4303-1 DS4303-2 DF685 | |
kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
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DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor | |
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Contextual Info: DF654 M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes O ctober 1996 version, DS4214 - 3.4 DS4214 - 3.5 APPLICATIONS • KEY PARAMETERS V RRM 3500V 675A Jf A V 6000A FSM 900|iC Q Induction Heating. ■ A.C. Motor Drives. ■ March 1998 Inverters And Choppers. |
OCR Scan |
DF654 DS4214 DF654 M779b. | |
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Contextual Info: DF754 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4216 - 3.3 March 1998 Supersedes Septem ber 1996 version, DS4216 - 3.2 KEY PARAMETERS V RRM 3500V 865A Jf AV 8000A FSM 1000|lC Qr APPLICATIONS • Induction Heating. ■ A.C. M otor Drives. ■ Inverters And C hoppers. |
OCR Scan |
DF754 DS4216 M779b. | |
LIC AGENTS DATAContextual Info: DF754 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4216 -3 .3 March 1998 Supersedes Septem ber 1996 version, DS4216 - 3.2 KEY PARAMETERS V RRM 3500V 865A Jf A V 8000A FSM 1000(lC Q, 6 .0 |is APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ |
OCR Scan |
DF754 DS4216 M779b. LIC AGENTS DATA | |
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Contextual Info: S i GEC P L E S S E Y SEPTEMBER 1995 SEMICONDUC TOR S DS4303-1.2 DF685 FAST RECOVERY DIODE KEY PARAMETERS 4500V 445A Jf AV 4500A FSM 650(lC Or APPLICATIONS vRRM • Snubber Diode For GTO Applications. 5|iS FEATURES ■ Double Side Cooling. ■ High Surge Capability. |
OCR Scan |
DS4303-1 DF685 DF685 M779b. 37bflS22 | |
AN4506
Abstract: AN4839 AN4853 DF654
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DF654 DS4214-3 DS4214-4 DF654 M779b. AN4506 AN4839 AN4853 | |
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NDF653
Abstract: df653
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DF653 NDF653 DS4203-4 DS4203-5 NDF653 | |
DCR2950W
Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
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DS5766-4. DCR2950W K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A | |
DF754Contextual Info: DF754 DF754 Fast Recovery Diode Replaces January 2000 version, DS4216-4.0 DS4216-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 865A IFSM 8000A Qr 1000µC trr 6.0µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers ■ Welding |
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DF754 DS4216-4 DS4216-5 DF754 M779b. | |
AN4506
Abstract: AN4839 AN4853 DF752
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DF752 DS4212-3 DS4548 2000A DF752 M779b. AN4506 AN4839 AN4853 | |
DSF11060SGContextual Info: DSF11060SG DSF11060SG Fast Recovery DioGH DS4548 - JXO\ 20 /1 31791 KEY PARAMETERS |
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DSF11060SG DS4548 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. DSF11060SG | |
DS4217-2Contextual Info: @ M ITEL DSF11060SG Fast Recovery Diode SE M IC O N D U C T O R Supersedes Septem ber 1996 version, DS4217 - 2.3 D S 4 2 1 7 -2 .4 March 1998 APPLICATIONS KEY PARAMETERS • ^rrm Snubber Diode For GTO Circuits. 6000V ^f a v 4 0 0 A 'f s m 4200A Qr 700|iC |
OCR Scan |
DS4217 DSF11060SG DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. DS4217-2 | |
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Contextual Info: DF752 M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes July 1996 version, DS4212 - 3.3 DS4212 - 3.4 KEY PARAMETERS V RRM 2500V 1050A Jf A V 12000A FSM 1000(lC Q, 6 .0 |is APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ March 1998 Inverters And Choppers. |
OCR Scan |
DF752 DS4212 2000A DF752 M779b. | |
DSF11060SG
Abstract: 1000A 100V power diode DSF11060SG60 M779b DSF11060SG55 DSF11060SG56 DSF11060SG58 DS4548
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DSF11060SG DS4217-3 DS4548-4 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. DSF11060SG 1000A 100V power diode DSF11060SG60 M779b DSF11060SG55 DSF11060SG56 DSF11060SG58 DS4548 | |
DF754Contextual Info: DF754 DF754 Fast Recovery Diode Replaces March 1998 version, DS4216-3.3 DS4216-4.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 865A IFSM 8000A Qr 1000µC trr 6.0µs • Induction Heating ■ A.C. Motor Drives ■ Inverters And Choppers ■ Welding |
Original |
DF754 DS4216-3 DS4216-4 DF754 M779b. | |
1000A 100V power diodeContextual Info: DSF11060SG DSF11060SG Fast Recovery Diode Replaces January 2000 version, DS4217-3.0 DS4548-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling |
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DSF11060SG DS4217-3 DS4548-4 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 M779b. 1000A 100V power diode | |