M7 MARKING Search Results

Contextual Info: Note: 1. Marking M1~M7

fairchild marking codes sot-23

Abstract: marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component KST5088
Contextual Info: KST812M3/M4/M5/M6/M7 KST812M3/M4/M5/M6/M7 General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter Value -50

SENSOR MARKING CODEBOOK

Contextual Info: STM32F756xx ARM -based Cortex®-M7 32b MCU+FPU, 428DMIPS, up to 1MB Flash/320+16+ 4KB RAM, crypto, USB OTG HS/FS, ethernet, 18 TIMs, 3 ADCs, 25 com itf, cam & LCD Data brief Features • • • • • • • • • • • &"'! Core: ARM® 32-bit Cortex®-M7 CPU with FPU,

m7 diode

Abstract: diode M7 M2 M7 marking L2 marking M7 MARKING M2 Diode marking m7 marking of m7 diodes M74LS160P 69358
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT PACKAGES MARKING SPECIFICATIONS 4.2 CHARACTER SIZE AND MARKING Character sizes are coded as follows: Code A2 S2 S7 M2(M7) L2(L7) Character height (mm) 1.0 1.2 1.8 2.4 Character width (mm) 0.8 0.8 1.1 1.4 Printing examples are shown below.

m1-m7

Contextual Info: SANGDEST MICROELECTRONICS M1-M7 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Green Products Technical Data Data Sheet N0554, Rev. - Marking Diagram: Where XXXXX is YYWWL M1 YY WW L = Part Name = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0

1D-S marking

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

M7 marking code

Abstract: MARKING M7 DO-214AC marking code M7 m1 marking code M7 DO-214AC
Contextual Info: M1 THRU WILLAS M7 SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES SMA-P DO-214AC Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position : Any Weight : 0.066 grams

dc m7 footprint

Abstract: sma M7 diode sma M4 diode sma m7 marking of m7 diodes diode dc components m7 footprint M1-M7 Rectifier Diode diode m7 M7 diode footprint wave soldering M7 DO-214AC
Contextual Info: M1 – M7 WTE POWER SEMICONDUCTORS 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss A Built-in Strain Relief

m1 marking code

Abstract: rectifier M7 marking m7 diodes m7 diodes marking of m7 diodes M78A marking m1 DIODES DATE code marking DIODES MARKING M5 Diode marking m7
Contextual Info: 11/01/99 70 Maxess Road ! Melville, New York 11747 516 396-7500 ! Fax (516) 396-7575 COMPONENT MARKING PRODUCTS: SMT DIODES SERIES: NRD & NSD TYPE: SMA SIZE FLAT CHIP RECTIFIER DIODES NIC SERIES: NRD M7 8A PRODUCTION DATE CODE: FIRST DIGIT IS YEAR CODE: 7 = 1997, 8 = 1998, 9 = 1999

M6 transistor

Abstract: KST812M6 sot-23 marking code pe marking M6 transistor M6 Marking pnp M7 marking codes mark M7 m6 marking transistor transistor SOT23 m6 sot-23 Marking M6
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation

KST812M6 transistor

Abstract: KST812M6
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit -50 -40 -5 -100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

KST812M7

Abstract: marking m3 transistor KST5088 KST812M3 KST812M4 KST812M5 KST812M6 m6 marking transistor mark M7 MARKING CODE M6
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA= 2 5t: C haracteristic Sym bol C ollector-B ase Voltage C ollecto r-E m ltte r Voltage E m itter-Base Voltage C ollecto r C urrent C ollecto r D issipation

CQCC1-N20

Abstract: GDIP1-T16 HA-2400 QML38535 QML-38535
Contextual Info: APR 97 D IS T R IB U T IO N S T A T E M E N T A . Approved for public release; distribution is unlimited. T 0 0 M7 0 f l 0031312 5 9 6 2 -E 3 2 4 -9 7 bbf i 1. SCOPE 1.1 Scope. T his drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in

MARKING M7 DO-214AC

Contextual Info: MCC TM Micro Commercial Components M1 THRU M7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x • • • 1.0 Amp Silicon Rectifier 50 to 1000 Volts Case Material: Molded Plastic. UL Flammability

Contextual Info: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MCC TM Micro Commercial Components M1 THRU M7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x • • x 1.0 Amp Silicon Rectifier 50 to 1000 Volts Case Material: Molded Plastic. UL Flammability

2SA812-M7

Abstract: 2SA812M5 2SA812 2SA812M6 2SA812-M4
Contextual Info: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

2SA812

Contextual Info: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

F5 RS1J

Abstract: SMA4933 SMA4934 SMA4935 SMA4936 SMA4937 marking code m7 f6 FRS1J FS3A S2G SG
Contextual Info: Surface Mount Rectifiers Max. Average Peak Inverse Peak Fwd. Surge Rectified Current @ 8.3 ms Voltage Current Superimposed Marking Code Part No. Operating Temperature: -65oC to 150o C Max. Forward Voltage @ 25 o C @ Rated Io Max. Reverse Current @ 25o C @ Rated PIV

L2SA812QLT1G

Abstract: L2SA812RLT1G L2SA812SLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. 3 ƽNPN complement: L2SC1623 ƽ We declare that the material of product compliance with RoHS requirements. 1 DEVICE MARKING AND ORDERING INFORMATION

M6 SOT23-3

Abstract: L2SA812QLT1 L2SA812QLT1G L2SA812RLT1 L2SA812RLT1G L2SA812SLT1 L2SA812SLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812*LT1 FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. 3 ƽNPN complement: L2SC1623 ƽPb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION Marking Shipping M8 3000/Tape&Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. 3 ƽNPN complement: L2SC1623 ƽ We declare that the material of product compliance with RoHS requirements. 1 DEVICE MARKING AND ORDERING INFORMATION