M68AW512D Search Results

tpd1221

Contextual Info: M68AW512D 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55, 70ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O

8x10m

Contextual Info: M68AW512D 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

Contextual Info: M68AW512D 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 2.7 to 3.6V 512K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 55, 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

TFBGA48

Abstract: M68AW512D
Contextual Info: M68AW512D 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 2.7 to 3.6V 512K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 55, 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

Contextual Info: M68AW512DL 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

m68aw512

Abstract: 10-WRITE
Contextual Info: M68AW512D 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 2.7 to 3.6V 512K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 55, 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

Contextual Info: M68AW512DL 8 Mbit 512K x16 3.0V Asynchronous SRAM TARGET SPECIFICATION FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.0V

M68AW512D

Abstract: TFBGA48
Contextual Info: M68AW512D 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55, 70ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O

M68AW512DL

Abstract: TFBGA48
Contextual Info: M68AW512DL 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.3V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

Contextual Info: M68AW512DL 8 Mbit 512K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

TSOP44 Package

Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
Contextual Info: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments