8X10M Search Results

A420

Abstract: A440 A441 A442 SL1024A 15KA
Contextual Info: GAS DISCHARGE TUBE 8x10mm No. A440/A441/A442 3-electrode 10kA/10A Standard Series Features This product is not recommended for new designs. Please refer to Littelfuse series SL1024A. Non-radioactive Lead Free Failsafe Option Applications Telecommunication

Contextual Info: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K

A450

Abstract: A451 A452 SL1021A
Contextual Info: GAS DISCHARGE TUBE 8x10mm 451 /A 452 No. A4 A455 0/A 0/A451 451/A /A452 3-electrode 20kA/10A Enhanced Discharge Series This product is not recommended Features for new designs. Please refer to Non-radioactive Lead Free Failsafe Option Littelfuse series SL1021A.

CS16LV81923

Abstract: 850C SRAM 512K
Contextual Info: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K

Contextual Info: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K

Contextual Info: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K

Contextual Info: ESMT Preliminary M53D128168A Revision History Revision 1.0 16 Nov. 2007 - Original Revision 1.1 (02 Jan. 2008) - Change BGA package - Modify tIS Revision 1.2 (16 Jan. 2008) - Add 8x10mm BGA package Elite Semiconductor Memory Technology Inc. Publication Date : Jan. 2008

a440 ceramic

Abstract: A441 A420 A440 A442
Contextual Info: GAS DISCHARGE TUBE 8x10mm No. A440/A441/A442 3-electrode 10kA/10A Standard Series Features Non-radioactive Lead Free Failsafe Option Applications Telecommunication Data Transmission Subscriber protection Underground cables Specifications Packaging A440:

Contextual Info: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K

Contextual Info: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K

Contextual Info: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. 2.0 2.1 2.2 History Initial issue with new naming rule Add 48CSP-6x8mm package outline Revise 48CSP-8x10mm pkg code from W to K Issue Date Feb.15, 2005 Mar. 08, 2005

Contextual Info: High Speed Super Low Power SRAM CS16LV16163K 1M Word x 16 Bit PACKAGE DIMENSIONS: 48 ball Mini_BGA-8x10mm 14 Rev. 1.0 Chiplus reserves the right to change product or specification without notice.

A450

Abstract: A451 A452
Contextual Info: GAS DISCHARGE TUBE 8x10mm 451 /A 452 No. A4 A4550/A 0/A451 451/A /A452 Specifications 3-electrode 20kA/10A Enhanced Discharge Series Packaging A450: 00=Bulk (2.000 pcs.) A450/F: 00_Bulk (500 pcs.) Features A451: 04=Tray (250 pcs.) A452/F: 04=Tray (500 pcs.)

T14L1024N

Abstract: T14L1024N-10C T14L1024N-10H T14L1024N-10J T14L1024N-10P T14L1024N-10W
Contextual Info: tm TE CH T14L1024N SRAM 128K X 8 HIGH SPEED CMOS STATIC RAM FEATURES GENERAL DESCRIPTION • Fast Address Access Times : 10/12/15ns The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for

M36L0T7050T2

Abstract: M58LT128HB M58LT128HT M36L0t7050
Contextual Info: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 32 Mbit (2 Mb x16) PSRAM, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory – 1 die of 32 Mbit (2 Mb x16) Pseudo SRAM

a6583

Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
Contextual Info: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers

100PF

Abstract: BS616UV8010 BS616UV8010BC BS616UV8010BI
Contextual Info: Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit BSI „ FEATURES BS616UV8010 „ DESCRIPTION • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA Max. operating current I-grade : 20mA (Max.) operating current

BS616LV8013

Abstract: BS616LV8013BC BS616LV8013BI
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 512K X 16 bit „ FEATURES BS616LV8013 „ DESCRIPTION • Very low operation voltage : 2.4~3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current

M68AR512DL

Abstract: TFBGA48
Contextual Info: M68AR512DL 8 Mbit 512K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V

100PF

Abstract: BS616UV1610 BS616UV1610BC BS616UV1610BI BS616UV1610FC BS616UV1610FI
Contextual Info: BSI Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 „ FEATURES „ DESCRIPTION • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 25mA Max. operating current I-grade : 30mA (Max.) operating current

PSRAM

Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA
Contextual Info: M36L0R8060T1 M36L0R8060B1 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory

510T

Abstract: BS616LV4023 BS616LV4023BC BS616LV4023BI BS616LV4023DC BS616LV4023DI
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable BS616LV4023 „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current

a10 bga-9

Abstract: transistors equivalent 0912 BS616UV1620 BS616UV1620BC BS616UV1620BI BS616UV1620FC BS616UV1620FI
Contextual Info: Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BSI BS616UV1620 „ DESCRIPTION „ FEATURES • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 1.8V C-grade : 25mA Max. operating current I- grade : 30mA (Max.) operating current

Contextual Info: M68AR024D 16 Mbit 1M x16 1.8V Asynchronous SRAM OBSOLETE PRODUCT FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V I/O SUPPLY VOLTAGE: 1.5 to 1.95V 1M WORDS x 16 bits LOW POWER SRAM EQUAL CYCLE and ACCESS TIME: 70ns LOW VCC DATA RETENTION: 1.0V