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    M4435 Search Results

    M4435 Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge HSM4435
    		Huashuo Semiconductor P-Ch 30V Fast Switching MOSFET with -9.5A continuous drain current, 18mΩ RDS(ON), low gate charge, and high cell density trench technology for synchronous buck converter applications. Original PDF
    badge CEM4435A-VB
    		VBsemi Electronics Co Ltd P-Channel 30-V MOSFET with 9.0 A continuous drain current, 0.018 ohm RDS(on) at VGS = -10 V, and 13 nC gate charge, suitable for load and battery switch applications in a DSO-8 package. Original PDF
    badge CEM4435A
    		VBsemi Electronics Co Ltd P-Channel 30-V MOSFET with 9.0 A continuous drain current, 0.018 ohm RDS(on) at VGS = -10 V, and 13 nC gate charge, suitable for load and battery switch applications in a DSO-8 package. Original PDF
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    M4435 Price and Stock

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    TDE Instruments ESM-4435.2.20.0.1-01.01-0.0.0.0

    CONTROL TEMP/PROC RELAY OUT 24V
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    DigiKey ESM-4435.2.20.0.1-01.01-0.0.0.0 2 1
    • 1 $155.86
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    TDE Instruments ESM-4435.1.20.0.1-01.01-0.0.0.0

    CONTROL TEMP/PROC 100-240V PL MT
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    DigiKey ESM-4435.1.20.0.1-01.01-0.0.0.0 2 1
    • 1 $155.86
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    Heyco M4435

    FLEX RLTCG M25 GRAY-NO NUT
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    DigiKey M4435 Bulk 250
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    Mouser Electronics () M4435
    • 1 $3.30
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    M4435
    • 1 $3.30
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    DB Roberts M4435
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    Bivar Inc ELM-4-435

    LED HOLDER T1 PVC BLACK
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    DigiKey ELM-4-435 Bag 1,000
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    Taiwan Semiconductor TSM4435BCS-RLG

    MOSFET P-CHANNEL 30V 9.1A 8SOP
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    DigiKey TSM4435BCS-RLG Tape & Reel 5,000
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    Find more M4435 price and stock on Findchips.com

    M4435 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SSS S S M4435 S outh S ea S emiconductor J ULY ,2004 V er1.1 P -C hannel E nhancement Mode MOS FE T F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( m W ) Max R ugged and reliable. 20 @ V G S = -10V -30V 5 S uper high dense cell design for low R DS (ON ).


    Original     		M4435 PDF

    M4435

    Abstract: stm4435 S1470
    Contextual Info: S T M4435 S amHop Microelectronics C orp. J AN.20 2006 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 20 @ V G S = -10V


    Original     		M4435 M4435 stm4435 S1470 PDF

    M4435

    Abstract: stm4435
    Contextual Info: S T M4435 Green Product S amHop Microelectronics C orp. J AN.20 2006 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.


    Original     		M4435 M4435 stm4435 PDF