M36A Search Results

M36A0W504

Abstract: m36 mcp M28W320FCB JESD97 M28W320FC M28W320FCT M69AW024BE BGA-Z12 M28W320 WPF 25K
Contextual Info: M36A0W5040T0 M36A0W5040B0 32 Mbit 2 Mb x16, Boot Block Flash memory 16 Mbit (1 Mb ×16) PSRAM, multi-chip package Features • ■ ■ ■ Multi-chip package – 1 Die of 32 Mbit (2 Mb ×16) Flash memory – 1 Die of 16 Mbit (1 Mb ×16) Pseudo SRAM FBGA

OCO-M36AS12

Contextual Info: OCO-M36AS Through hole OCXO Sine wave • •   Features Applications: CDMA, 3G, networking, instrumentation High frequency stability vs. temperature up to ±1 x 10-10 Wide operating temperature range: -40 up to +85 °C Low aging Specification Parameter

Contextual Info: OCO-M36AGS Low G-sensitivity OCXO Sine wave ƒ ƒ ƒ Features Low G-sensitivity stability 1.0 x 10-9 /g High frequency stability vs. temperature up to ±7.5 x 10-9 Low phase noise optional Specification Parameter OCO-M36AGS5 Frequency range Standard frequencies

Contextual Info: OCO-M36AH Through hole OCXO HCMOS • •   Features Applications: CDMA, 3G, networking, instrumentation High frequency stability vs. temperature up to ±1 x 10-10 Wide operating temperature range: -40 up to +85 °C Low aging Specification Parameter

Contextual Info: OCO-M36ADS Double oven through hole OCXO Sine wave ƒ ƒ ƒ Features Applications: GPS, CDMA, 3G, 4G High frequency stability vs. temperature up to ±2 x 10-10 Low phase noise: < -160 dBc/Hz @ 10 kHz Parameter Specification Frequency range Standard frequencies

m36a

Contextual Info: T M 4 9 7 M B M 3 6 A , T M 4 9 7 M B M 3 6 Q 41 9 4 3 0 4 BY 36-BIT T M 8 9 3 N B M 3 6 A , T M 8 9 3 N B M 3 6 Q 8 3 8 8 6 0 8 BY 36-BIT DYNAMIC RANDOM-ACCESS MEMORY MODULES SMMS653B - MAY 1995 - REVISED JULY 1995 O r ga ni z a t i on T M4 9 7 M B M 3 6 A . . . 41 9 4304 x 36

PF38F4060M0Y3DF

Abstract: PF38F3040 PF38F5060M0Y0CF m36w0r6050u PF48F6000M0Y1BH M36W0R5040 PF38F5070M0Y1EE M36W0T5040 Pf38f3050m0y0Ce PF38F3050M0Y3DF
Contextual Info: product line card Numonyx NOR flash memory Numonyx NOR flash memory for wireless applications A wide selection of NOR plus RAM multi-chip package offerings, and NOR only packages N u m on y x M S t r a t a f l a s h ® C e l l u l a r M e m or y NOR Density

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,