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    M2V PACKAGE Search Results

    M2V PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH1R306PL
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Datasheet
    TPH9R00CQH
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Datasheet
    TPH9R00CQ5
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Datasheet
    TPHR8504PL
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Datasheet
    XPH2R106NC
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Datasheet

    M2V PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SK1606 Switching Diodes MA128 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 ● Short reverse recovery period trr ● Small capacity between pins, Ct ● High voltage resistance VR : 80V 3 0 to 0.05 0.1 to 0.3


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    2SK1606 MA128 MA123 PDF

    M2V Package

    Abstract: MA6X123 MA6X128
    Contextual Info: Switching Diodes MA6X128 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 2 4 3 + 0.1 0.16 − 0.06 + 0.2 2.9 − 0.05 + 0.2 5 0.8 1.1 − 0.1 1.9 ± 0.2 0.95 0.95 6 • Four-element contained in one package, allowing high-density


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    MA6X128 MA6X123) M2V Package MA6X123 MA6X128 PDF

    Contextual Info: polyfet rf devices F2201 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET AP PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended


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    F2201 1110AvenidaAcaso, 72410CH G000241 PDF

    Contextual Info: polyfet rf devices F1206 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET fiP PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown " P o l y f e t " p r o c e s s features


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    F1206 1110AvenidaAcaso, 7S41GCH PDF

    30R2R

    Abstract: Nichicon PT-Series
    Contextual Info: Communication ICs Power supply unit for LCDs BP5302/B P5302F The BP5302 and BP5302F are DC-DC converter units for supplying power to liquid crystal display LCD panels. The ICs supply a negative voltage from a positive power supply. They are available in a single in-line package as an


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    BP5302/B P5302F BP5302 BP5302F BP5302) BP5302F) 20kfl BP5302/BP5302F BP5302F 30R2R Nichicon PT-Series PDF

    MA123

    Abstract: MA128 MA6X123 MA6X128
    Contextual Info: Switching Diodes MA6X128 MA128 Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 • Four isolated elements contained in one package, allowing highdensity mounting • Centrosymmetrical wiring, allowing to free from the taping direction


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    MA6X128 MA128) MA6X123 MA123) MA123 MA128 MA6X123 MA6X128 PDF

    JEDEC MO-187 Variation BA

    Abstract: 10-PIN MO-187 MO-229 SP6652 SP6652ER SP6652EU peak Current Mode internal loop Compensation Voltage Regulator Transconductance current source feedback PWM
    Contextual Info: SP6652 1A, High Efficiency, High Frequency Current Mode PWM Buck Regulator FEATURES PGND 1 10 LX • 1A Output Current SGND 2 9 PVIN SP6652 ■ 1.2MHz Constant Frequency Operation 8 SVIN FB 3 ■ 97% Efficiency Possible 10 Pin MSOP 7 SYNC COMP 4 ■ Pin Selectable Forced PWM or PWM/PFM Modes


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    SP6652 500nA SP6652EU/TR SP6652EU-L/TR SP6652 JEDEC MO-187 Variation BA 10-PIN MO-187 MO-229 SP6652ER SP6652EU peak Current Mode internal loop Compensation Voltage Regulator Transconductance current source feedback PWM PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J7000G Silicon epitaxial planar type For high frequency rectification • Package ■ Features • Code SMini3-F2 • Pin Name 1: Anode 2: N.C. 3: Cathode • Forward current (Average) IF(AV) = 500 mA rectification is possible


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    2002/95/EC) MA3J7000G PDF

    10-PIN

    Abstract: MO-187 MO-229 SP6652 SP6652ER SP6652EU
    Contextual Info: SP6652 1A, High Efficiency, High Frequency Current Mode PWM Buck Regulator FEATURES • 1A Output Current ■ 1.2MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ Pin Selectable Forced PWM or PWM/PFM Modes ■ Ultra Low Quiecent Current in PFM Mode: 50µA


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    SP6652 500nA SP6652 10-PIN MO-187 MO-229 SP6652ER SP6652EU PDF

    MA123

    Abstract: MA128 MA6X123 MA6X128
    Contextual Info: Switching Diodes MA6X128 MA128 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 2 4 3 + 0.1 0.16 − 0.06 + 0.2 2.9 − 0.05 + 0.2 5 0.8 1.1 − 0.1 1.9 ± 0.2 0.95 0.95 6 • Four-element contained in one package, allowing high-density


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    MA6X128 MA128) MA6X123 MA123) MA123 MA128 MA6X123 MA6X128 PDF

    MA3J7000G

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J7000G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high frequency rectification • Package ■ Features • Code SMini3-F2 • Pin Name


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    2002/95/EC) MA3J7000G MA3J7000G PDF

    MA6X1280G

    Abstract: M2V Package MA6X123
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X1280G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching circuits • Package • Four isolated elements contained in one package, allowing highdensity mounting


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    2002/95/EC) MA6X1280G MA6X123 MA6X1280G M2V Package MA6X123 PDF

    Contextual Info: Subscriber Line Interface Circuit SLIC Protection Battrax (Modified DO-214) Subscriber Line In terface C ircuit (SLIC) Protection B attrax ( M o d i f i e d 0 0 -2 1 4 ) SIDACtor Data Book PIN 3 (VREF)- \ PIN 1 _ X (Line) The Battrax is a solid state protection device that can


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    DO-214) PDF

    MA6X123

    Abstract: MA6X1280G
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X1280G Silicon epitaxial planar type For switching circuits • Package • Four isolated elements contained in one package, allowing highdensity mounting • Centrosymmetrical wiring, allowing to free from the taping direction


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    2002/95/EC) MA6X1280G MA6X123 MA6X123 MA6X1280G PDF

    nh0002

    Abstract: LH0002CN NH0002C LH0002 E20A LH0002C LH0002E LH0002H N10A LH0002GH
    Contextual Info: NATL SEf l l COND LINEAR BEE D bS011E4 0Dbfl71S LH0002/LH0002C Current Amplifier General Description The LH0QQ2/LHQ002C is a general purpose current amplifi­ er. cuit also provides a low output Impedance for both the posi­ tive and negative slopes of output pulses.


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    bS011S4 LH0002/LH0002C T-T9-23 TL/H/5560-7 nh0002 LH0002CN NH0002C LH0002 E20A LH0002C LH0002E LH0002H N10A LH0002GH PDF

    Contextual Info: SP6652 1A, High Efficiency, Fixed 1.4 MHz Current Mode PWM Buck Regulator FEATURES • 1A Output Current ■ 1.4MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ 0.5µA Max. Shutdown Current ■ Adjustable Output Down to 0.75V ■ No External FETs or Schottky Diode Required


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    SP6652 SP6652 SP6652ER/TR SP6652EU/TR SP6652EU-L/TR PDF

    Contextual Info: SP6652 1A, High Efficiency, Fixed 1.4 MHz Current Mode PWM Buck Regulator FEATURES • 1A Output Current ■ 1.4MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ 0.5µA Max. Shutdown Current ■ Adjustable Output Down to 0.75V ■ No External FETs or Schottky Diode Required


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    SP6652 SP6652 SP6652EU/TR SP6652EU-L/TR PDF

    JL 1500 6.3v

    Contextual Info: SP6652 1A, High Efficiency, Fixed 1.4 MHz Current Mode PWM Buck Regulator FEATURES • 1A Output Current ■ 1.4MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ 0.5µA Max. Shutdown Current ■ Adjustable Output Down to 0.8V ■ No External FETs or Schottky Diode Required


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    SP6652 SP6652 SP6652EU/TR SP6652EU-L/TR JL 1500 6.3v PDF

    CDRH3D28-4R7

    Abstract: buck converter 2kw CDRH3D28-3R3 GRM188R60J475KE19 GRM21BR60J106KE19L SP6652 SP-652
    Contextual Info: SP6652 Solved by TM 1A, High Efficiency, Fixed 1.4 MHz Current Mode PWM Buck Regulator Features • 1A Output Current ■ 1.4MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ 0.5µA Max. Shutdown Current ■ Adjustable Output Voltage ■ No External FETs or Schottky Diode Required


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    SP6652 May25-07 SP6652 CDRH3D28-4R7 buck converter 2kw CDRH3D28-3R3 GRM188R60J475KE19 GRM21BR60J106KE19L SP-652 PDF

    TDK 4.7uh

    Abstract: buck converter 2kw GRM188R60J475KE19 GRM21BR60J106KE19L SP6652
    Contextual Info: Solved by SP6652 TM 1A, High Efficiency, Fixed 1.4 MHz Current Mode PWM Buck Regulator Features • 1A Output Current ■ 1.4MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ 0.5µA Max. Shutdown Current ■ Adjustable Output Voltage ■ No External FETs or Schottky Diode Required


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    SP6652 Oct10-07 SP6652 TDK 4.7uh buck converter 2kw GRM188R60J475KE19 GRM21BR60J106KE19L PDF

    Contextual Info: SP6652/SP6652A 1A, High Efficiency, Fixed 1.4 MHz Current Mode PWM Buck Regulator FEATURES • 1A Output Current ■ 1.4MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ 0.5µA Max. Shutdown Current ■ Adjustable Output Down to 0.8V ■ No External FETs or Schottky Diode Required


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    SP6652/SP6652A SP6652 SP6652 SP6652EU/TR SP6652EU-L/TR PDF

    MA3J7000G

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J7000G Silicon epitaxial planar type For high frequency rectification • Package ■ Features • Code SMini3-F2 • Pin Name 1: Anode 2: N.C. 3: Cathode Th an


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    2002/95/EC) MA3J7000G MA3J7000G PDF

    MA6X123

    Abstract: MA6X128 MA123 MA128
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X128 (MA128) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 5 2 1 (0.65) 3 0.30+0.10 –0.05 Reverse voltage Maximum peak reverse voltage


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    2002/95/EC) MA6X128 MA128) SC-74 MA6X123 MA6X128 MA123 MA128 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X128 (MA128) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 5 2 1 (0.65) 3 0.30+0.10 –0.05 Reverse voltage Maximum peak reverse voltage


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    2002/95/EC) MA6X128 MA128) MA6X123 MA123) PDF