M2V PACKAGE Search Results
M2V PACKAGE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPH1R306PL |
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N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
TPH9R00CQH |
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MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) | Datasheet | ||
TPH9R00CQ5 |
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N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) | Datasheet | ||
TPHR8504PL |
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N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
XPH2R106NC |
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N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) | Datasheet |
M2V PACKAGE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2SK1606 Switching Diodes MA128 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 ● Short reverse recovery period trr ● Small capacity between pins, Ct ● High voltage resistance VR : 80V 3 0 to 0.05 0.1 to 0.3 |
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2SK1606 MA128 MA123 | |
M2V Package
Abstract: MA6X123 MA6X128
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MA6X128 MA6X123) M2V Package MA6X123 MA6X128 | |
Contextual Info: polyfet rf devices F2201 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET AP PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended |
OCR Scan |
F2201 1110AvenidaAcaso, 72410CH G000241 | |
Contextual Info: polyfet rf devices F1206 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET fiP PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown " P o l y f e t " p r o c e s s features |
OCR Scan |
F1206 1110AvenidaAcaso, 7S41GCH | |
30R2R
Abstract: Nichicon PT-Series
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OCR Scan |
BP5302/B P5302F BP5302 BP5302F BP5302) BP5302F) 20kfl BP5302/BP5302F BP5302F 30R2R Nichicon PT-Series | |
MA123
Abstract: MA128 MA6X123 MA6X128
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MA6X128 MA128) MA6X123 MA123) MA123 MA128 MA6X123 MA6X128 | |
JEDEC MO-187 Variation BA
Abstract: 10-PIN MO-187 MO-229 SP6652 SP6652ER SP6652EU peak Current Mode internal loop Compensation Voltage Regulator Transconductance current source feedback PWM
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SP6652 500nA SP6652EU/TR SP6652EU-L/TR SP6652 JEDEC MO-187 Variation BA 10-PIN MO-187 MO-229 SP6652ER SP6652EU peak Current Mode internal loop Compensation Voltage Regulator Transconductance current source feedback PWM | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J7000G Silicon epitaxial planar type For high frequency rectification • Package ■ Features • Code SMini3-F2 • Pin Name 1: Anode 2: N.C. 3: Cathode • Forward current (Average) IF(AV) = 500 mA rectification is possible |
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2002/95/EC) MA3J7000G | |
10-PIN
Abstract: MO-187 MO-229 SP6652 SP6652ER SP6652EU
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SP6652 500nA SP6652 10-PIN MO-187 MO-229 SP6652ER SP6652EU | |
MA123
Abstract: MA128 MA6X123 MA6X128
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MA6X128 MA128) MA6X123 MA123) MA123 MA128 MA6X123 MA6X128 | |
MA3J7000GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J7000G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high frequency rectification • Package ■ Features • Code SMini3-F2 • Pin Name |
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2002/95/EC) MA3J7000G MA3J7000G | |
MA6X1280G
Abstract: M2V Package MA6X123
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2002/95/EC) MA6X1280G MA6X123 MA6X1280G M2V Package MA6X123 | |
Contextual Info: Subscriber Line Interface Circuit SLIC Protection Battrax (Modified DO-214) Subscriber Line In terface C ircuit (SLIC) Protection B attrax ( M o d i f i e d 0 0 -2 1 4 ) SIDACtor Data Book PIN 3 (VREF)- \ PIN 1 _ X (Line) The Battrax is a solid state protection device that can |
OCR Scan |
DO-214) | |
MA6X123
Abstract: MA6X1280G
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2002/95/EC) MA6X1280G MA6X123 MA6X123 MA6X1280G | |
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nh0002
Abstract: LH0002CN NH0002C LH0002 E20A LH0002C LH0002E LH0002H N10A LH0002GH
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OCR Scan |
bS011S4 LH0002/LH0002C T-T9-23 TL/H/5560-7 nh0002 LH0002CN NH0002C LH0002 E20A LH0002C LH0002E LH0002H N10A LH0002GH | |
Contextual Info: SP6652 1A, High Efficiency, Fixed 1.4 MHz Current Mode PWM Buck Regulator FEATURES • 1A Output Current ■ 1.4MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ 0.5µA Max. Shutdown Current ■ Adjustable Output Down to 0.75V ■ No External FETs or Schottky Diode Required |
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SP6652 SP6652 SP6652ER/TR SP6652EU/TR SP6652EU-L/TR | |
Contextual Info: SP6652 1A, High Efficiency, Fixed 1.4 MHz Current Mode PWM Buck Regulator FEATURES • 1A Output Current ■ 1.4MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ 0.5µA Max. Shutdown Current ■ Adjustable Output Down to 0.75V ■ No External FETs or Schottky Diode Required |
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SP6652 SP6652 SP6652EU/TR SP6652EU-L/TR | |
JL 1500 6.3vContextual Info: SP6652 1A, High Efficiency, Fixed 1.4 MHz Current Mode PWM Buck Regulator FEATURES • 1A Output Current ■ 1.4MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ 0.5µA Max. Shutdown Current ■ Adjustable Output Down to 0.8V ■ No External FETs or Schottky Diode Required |
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SP6652 SP6652 SP6652EU/TR SP6652EU-L/TR JL 1500 6.3v | |
CDRH3D28-4R7
Abstract: buck converter 2kw CDRH3D28-3R3 GRM188R60J475KE19 GRM21BR60J106KE19L SP6652 SP-652
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SP6652 May25-07 SP6652 CDRH3D28-4R7 buck converter 2kw CDRH3D28-3R3 GRM188R60J475KE19 GRM21BR60J106KE19L SP-652 | |
TDK 4.7uh
Abstract: buck converter 2kw GRM188R60J475KE19 GRM21BR60J106KE19L SP6652
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SP6652 Oct10-07 SP6652 TDK 4.7uh buck converter 2kw GRM188R60J475KE19 GRM21BR60J106KE19L | |
Contextual Info: SP6652/SP6652A 1A, High Efficiency, Fixed 1.4 MHz Current Mode PWM Buck Regulator FEATURES • 1A Output Current ■ 1.4MHz Constant Frequency Operation ■ 97% Efficiency Possible ■ 0.5µA Max. Shutdown Current ■ Adjustable Output Down to 0.8V ■ No External FETs or Schottky Diode Required |
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SP6652/SP6652A SP6652 SP6652 SP6652EU/TR SP6652EU-L/TR | |
MA3J7000GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J7000G Silicon epitaxial planar type For high frequency rectification • Package ■ Features • Code SMini3-F2 • Pin Name 1: Anode 2: N.C. 3: Cathode Th an |
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2002/95/EC) MA3J7000G MA3J7000G | |
MA6X123
Abstract: MA6X128 MA123 MA128
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2002/95/EC) MA6X128 MA128) SC-74 MA6X123 MA6X128 MA123 MA128 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X128 (MA128) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 5 2 1 (0.65) 3 0.30+0.10 –0.05 Reverse voltage Maximum peak reverse voltage |
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2002/95/EC) MA6X128 MA128) MA6X123 MA123) |