M29W040 Search Results

Contextual Info: , SGS-THOMSON . raDwunnteinMiiiiiDei M29W040 VERY LOW VOLTAGE SINGLE SUPPLY 4 Megabit 512Kx 8, Sector Erase FLASH MEMORY • FAST ACCESS TIME: 100ns ■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ BYTE PROGRAMMING TIME: 12|us typical

PLCC32

Abstract: TSOP32 AN1122 M29W040 M29W040B CP 2AA
Contextual Info: M29W040B 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

Contextual Info: SGS-THOMSON M29W040 4 Mb 512K x 8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12*is typical ER ASETIM E - Block: 1.5 sec typical - Chip: 2.5 sec typical

Contextual Info: M29W040B 4 Mbit 512Kbx8, Uniform Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME - 1 Ojas p e r B y te typ ical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

M29W040

Abstract: PLCC32 TSOP32
Contextual Info: M29W040 4 Mb 512K x 8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Block: 1.5 sec typical – Chip: 2.5 sec typical

plcc32 pinout

Abstract: TSOP32 M29W040 PLCC32
Contextual Info: M29W040 4 Mb 512K x 8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Block: 1.5 sec typical – Chip: 2.5 sec typical

Contextual Info: Æ T S C S -THOMSON * 7 #. ÜO g^(& l^(gWiQ(gi M29W040 4 Mb (512K x 8, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ BYTE PROGRAMMING TIME: 12jjs typical

AN1122

Abstract: M29W040 M29W040B PLCC32 TSOP32
Contextual Info: M29W040B 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

plcc32 pinout

Abstract: TSOP32 Package
Contextual Info: M29W040 VERY LOW VOLTAGE SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 100ns 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Sector: 1.5 sec typical

Contextual Info: M29W040 4 Mbit 512Kb x 8, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ BYTE PROGRAMMING TIME: 12jjs typical ■ ERASE TIME - Block: 1.5 sec typical

M29W040

Abstract: M29W040B PLCC32 TSOP32 STMicroelectronics PLCC trace code
Contextual Info: M29W040 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W040 is replaced by the M29W040B 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical

AN1122

Abstract: M29W040 M29W040B PLCC32 TSOP32
Contextual Info: M29W040B 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

TSOP32

Abstract: plcc32 pinout TSOP32 Package M29W040 PLCC32 TSOP-32
Contextual Info: M29W040 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Block: 1.5 sec typical

M29W040

Abstract: PLCC32 TSOP32
Contextual Info: M29W040 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Block: 1.5 sec typical – Chip: 2.5 sec typical

AN1122

Abstract: M29W040 M29W040B PLCC32 TSOP32 CP 2AA
Contextual Info: M29W040B 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

Contextual Info: M29W040 VERY LOW VOLTAGE SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY FAST ACCESS TIME: 100ns 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Sector: 1.5 sec typical – Bulk: 2.5 sec typical

AN945

Abstract: m29f040 library AM29F040B AN945 data sheet M29F040 M29W040 MC68331 ST10R163 AM29F040 i80960
Contextual Info: AN945 APPLICATION NOTE Software Drivers for M29F040 and M29W040 Flash Memories CONTENTS Introduction The M29F040 Programming Model Modifying code from Am29F040 Generating STMicroelectronics Code C Library Functions Adapting the Software for the Target System

STMICROELECTRONICS MSL

Abstract: CDIP32 package CDIP32 M29F040B TSOP32 Package M29W040B PDIP32 PLCC32 QRFL0004 TSOP32
Contextual Info: QRFL0004 QUALIFICATION REPORT M29F040B, M29W040B T6X-U35: 4 Mbit x8 Single Supply Flash Memory INTRODUCTION The M29F040B and M29W040B are 4 Mbit Single Supply (respectively 5V and 3V) Flash memory products with Uniform Block partitioning and organized as 512 KByte of 8 bits each. Products can be programmed and erased in-system or in standard EPROM programmers.

TSOP32 Package

Abstract: TSOP32 M29W040 PLCC32 QR125
Contextual Info: QUALIFICATION REPORT M29W040 T6-U10: 4 Mb x8 FLASH MEMORY in PLCC32 and TSOP32 INTRODUCTION The M29W040 is a 4 Mb Single Supply (2.7V to 3.6V) Flash memory organized as 512K bytes of 8 bits each. It is offered in PLCC32 and TSOP32 packages. It can be programmed and erased in-system or in

AN1185

Abstract: AN1191 M29F040 M29F040B M29W040 M29W040B A/M29F040B(45/55/70/GR-468
Contextual Info: AN1191 APPLICATION NOTE Software Drivers for the M29F040B and M29W040B Flash Memories CONTENTS • INTRODUCTION ■ THE M29F040B PROGRAMMING MODEL ■ WRITING C CODE FOR THE M29F040B ■ C LIBRARY FUNCTIONS PROVIDED ■ PORTING THE DRIVERS TO THE TARGET SYSTEM

M29W040B

Abstract: AN1122 JESD97 M29W040 PLCC32 TSOP32 CP 2AA
Contextual Info: M29W040B 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

Contextual Info: SGS-THOMSON raDwunnteinMiiiiiDei M29W040 4 Mb 512K x 8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns > BYTE PROGRAMMING TIME: 12|us typical > ERASE TIME

Contextual Info: SGS-THOMSON raDwunnteinMiiiiiDei M29W040 4 Mb 512K x 8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns > BYTE PROGRAMMING TIME: 12|us typical > ERASE TIME

Contextual Info: w # S G S -T H O M S O N V # « RitlD M li[Lli©inS lii!lD©i M29W040 4 Mb 512K x 8, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 12|is typical