M27V512 Search Results

M27C512

Abstract: M27V512 M27W512 PDIP28 PLCC32
Contextual Info: M27V512 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM NOT FOR NEW DESIGN LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

FAH10

Abstract: gvrp jl m27c512 1N914 M27C512 M27V512 PLCC32 VA10
Contextual Info: r Z J S G S -T H O M S O N ^ 7 w . lMD § @liIUI®in3 R0]©l M27V512 LOW VOLTAGE 512K (64K x 8 OTP ROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ ACCESS TIME: 120,150 and 200ns ■ LOW POWER "CMOS” CONSUMPTION: - Active Current 10mA - Standby Current 10|xA

M27V512

Abstract: M27W512 PDIP28 PLCC32
Contextual Info: M27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM NOT FOR NEW DESIGN • M27V512 is replaced by the M27W512 ■ 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: 28 28 – Active Current 10mA at 5MHz ■

M27V512

Abstract: PDIP28 PLCC32
Contextual Info: M27V512 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: – Active Current 10mA at 5MHz 28 28 – Standby Current 10µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

Contextual Info: M27V512 512 Kbit 64Kb X 8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: - Active Current 10mAat5MHz - Standby Current 10|j,A ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 100|^s/byte (typical)

Contextual Info: r = 7 SGS-1H0MS0N M27V512 * 1Ë» OKilD g[S i[Li(g,inS© iD(gi LOW VOLTAGE CMOS 512K (64K x 8 OTP ROM ABBREVIATED DATA LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (TA= 0 to 70°C) - Vcc Range: 3.2V to 5.5V (TA = -4 0 to 85°C) ACCESS TIME: 120, 150 and 200ns

NS1051

Contextual Info: M27V512 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

M27V512

Abstract: M27W512 PDIP28 PLCC32
Contextual Info: M27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM NOT FOR NEW DESIGN • M27V512 is replaced by the M27W512 ■ 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: 28 28 – Active Current 10mA at 5MHz 1

M27V512

Abstract: PDIP28 PLCC32
Contextual Info: M27V512 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM DATA BRIEFING • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: – Active Current 10mA at 5MHz 28 28 – Standby Current 10µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

Contextual Info: / = T *7 # « S G S -ÎH O M S O N ,QJ 1Mq * S & M27V512 LOW VOLTAGE CMOS 512K 64K x 8) OTP ROM • LOW VOLTAGE READ OPERATION - V c c Range: 3V to 5.5V (Ta = 0 to 70°C) - V c c Range: 3.2V to 5.5V (T a = -4 0 to 85°C) ■ ACCESS TIME: 120, 150 and 200ns

Contextual Info: F Z J #« S G S - T H O M S O N M27V512 M g^(Q i[Li(iM (Q )[*§ LOW VOLTAGE CMOS 512K (64K x 8) OTP ROM • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (Ta = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (T a = -4 0 to 85°C) ■ ACCESS TIME: 200 and 250ns

Contextual Info: M27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION: – Active Current 10mA at 5MHz – Standby Current 10µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte (typical)

M27V512

Abstract: M27W512 PDIP28 PLCC32
Contextual Info: M27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM NOT FOR NEW DESIGN • M27V512 is replaced by the M27W512 ■ 3V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: 28 28 – Active Current 10mA at 5MHz ■

EPROM M27C512

Contextual Info: rZ T SCS-1H0 MS0 N *7 # M27V512 RfflDM§ iILlim®ROD i LOW VOLTAGE CMOS 512K 64K x 8) OTP ROM • LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (TA = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (T a = - 4 0 to 85°C) ■ ACCESS TIME: 200 and 250ns * LOW POWER "CMOS" CONSUMPTION:

90K-1

Contextual Info: M27V512 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

M27V512

Abstract: PDIP28 PLCC32 FDIP28W
Contextual Info: M27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION: – Active Current 10mA at 5MHz – Standby Current 10µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V

Contextual Info: /T T SGS'THOMSON ^ 7 # G fflD IIM ilLIO T M O IS i M 2 7V 5 12 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 90ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|jA

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

palce16v8 programming algorithm

Abstract: PH29EE010 ATMEL 620 93c46 EPROM NMC27C512AQ atmel 130 24c02 EP320I gal16v8 stag orbit 32 device list ph29ee010-xx gal16v8 programming
Contextual Info: Datum 18.11.1998 aus www.stagusa.com Orbit 48 Device Support List Version 25.0 Note ALL PLDs require Orbit 48 PLD Module Please consult device specific information at the end of this list. Stag Programmers Ltd. Silver Court, Watchmead, Welwyn Garden City, Herts AL7 1LT, U.K.

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

EPROM AMD

Abstract: VSOP 28 NM27C256N120 TC54256AF 27c256-15 TEXAS INSTRUMENTS 28/H5GQ1H24MJR-T0C NM27C256N150 27c256-20 TEXAS INSTRUMENTS M27C256B-10C6 27C64-12L
Contextual Info: EPROM EPROM Cross Reference Guide INTRODUCTION The purpose of this document is to provide a quick way to determine which EPROM parts are mechanical and electrical equivalents to Microchip devices. There is also a listing of manufacturer's part numbering schemes to assist in determining the specifications of a

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

PLCC32

Abstract: M27C M27W101 M27W102 M27W201 M27W401 M27W402 M27W512 M27W801 TSOP32
Contextual Info: OTP and UV EPROMs New Expanded Range ADVANCED PRODUCTS - DEPENDABLE SOLUTION The ST range of OTP and UV EPROMs is one of the widest in the world. Densities from 16 Kbit to 32 Mbit, plastic and ceramic windowed packages - both surface mounting and through hole standard 5V and low voltage, 3V, operation.

GL 6201

Abstract: PLCC32 M27C M27W101 M27W102 M27W201 M27W401 M27W402 M27W512 M27W801
Contextual Info: OTP and UV EPROMs New Expanded Range ADVANCED PRODUCTS - DEPENDABLE SOLUTION The ST range of OTP and UV EPROMs is one of the widest in the world. Densities from 16 Kbit to 32 Mbit, plastic and ceramic windowed packages - both surface mounting and through hole standard 5V and low voltage, 3V, operation.