M25 DIODE Search Results
M25 DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
M25 DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BRAUN R4
Abstract: en 175301-803 M12-A RD30 DIN 43650 bauform c DIN EN 175301-803 Diode Z20
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ip65/ip67m12-usm12-dm12-b+7 | |
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Contextual Info: 5168 Relay.qk 12/28/03 12:52 Page 7 CARLO GAVAZZI A u t o m a t i o n C o m p o n e n t s Relays 5168 Relay.qk 12/28/03 12:51 Page 2 Monostable or Bistable Miniature Power Relays • Miniature size 15 mm high • PCB mounting Type M15 Type M25 • Monostable or bistable versions |
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SILICON POWER CUBE
Abstract: "Silicon Power Cube" silicon power cube m50 600R M25E M5060 M2535SB POWER CUBE SBR 400V m25 diode
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m25/m505a-100a2500vacm5060+8 | |
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Contextual Info: Diodes Schottky Barrier Diode RB521S-30 /N ew / •Applications •External dimensions Units: mm Low current rectification CATHODE MARK •Features ; o Î . .I Schottky barrier diodes ?, ° +(i +j; 1)Designed for mounting on extremely small surface areas (EMD2) |
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rb521s-30200ma | |
ceag ghg 122 3121
Abstract: ceag ghg 534 ceag ghg 534 2506 crouse-hinds GHG 960 663 B0708 CEAG PTB 00 ATEX 3108 ceag ghg 412 ceag ghg 543 ceag GHG 543 2306 Ex-92
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ambitious53103/sld-69412ceag ghg 122 3121+9 | |
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Contextual Info: Diodes Schottky Barrier Diode RB751V-40 •Extemal dimensions Units: mm •A pplications High speed switching CATHODE MARK •F e a tu re s 1)Designecf for mounting on small surface areas (UMD2) 2)High reliability 1.25±0.1 •C onstruction Silicon epitaxial |
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rb751v-401000m | |
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Contextual Info: DF200AA120/160 DIODE MODULE UL;E76102 M Power Diode Module D F 2 0 0 A A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri cally isolated from semiconductor elements for simple heatsink |
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df200aa120/160e76102200ampdf200aa160+1 | |
1N21B
Abstract: 1n23 cv102
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500/1000ma1n21c1n23a1n21b+2 | |
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Contextual Info: D IO D E M O D U L E f .R.d . FDF60BA50/60 UL;E76102(M) Power Diode Module F D F 6 0 B A is designed for single phase full wave rectification, which has four fast recovery diodes connected in a single phase bridge configuration. F D F 6 0 B A is suitable for |
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fdf60ba50/60e76102100nsdc60a | |
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Contextual Info: TR A NSISTO R MODULE three phases bridge type QF20AA40/60 QF20AA is a six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The |
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qf20aa40/60qf20aa400/600v7t11243+1 | |
VG95343t
Abstract: raychem cable jointing kit lt 427 BAS 99 ATEX 1101 3294f raychem medium voltage cable termination kit 15kv outdoor type RESISTOR COLOUR CODING T18R-HS 33 kV raychem indoor plug in type heat shrink food and beverage stock sheet
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element-14120mm520mm140kg+10 | |
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Contextual Info: LatticeSC/M Family Data Sheet DS1004 Version 01.6, August 2007 LatticeSC/M Family Data Sheet Introduction March 2007 Preliminary Data Sheet DS1004 Features • High Performance FPGA Fabric • 15K to 115K four input Look-up Tables LUT4s • 132 to 942 I/Os |
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ds1004700mhz600mbps125gbps+1 | |
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Contextual Info: THYRISTOR MODULE PK pd,pe,kk 55GB UL;E76102(M) Power Thyristor/Diode Module P K 5 5G B series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat ings up to 800 V are available, and electrically isolated mounting |
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e76102ii00apk55gbb-196 | |
2-bit comparator
Abstract: LFSC3GA15E-5F900I PR77A PR55D pr94a diode transistor pt36c pt36C PB110C pb127d PB138
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ds1004700mhz600mbps125gbps+11 | |
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Contextual Info: LatticeSC/M Family Data Sheet DS1004 Version 02.0, March 2008 LatticeSC/M Family Data Sheet Introduction January 2008 Preliminary Data Sheet DS1004 Features • High Performance FPGA Fabric • 15K to 115K four input Look-up Tables LUT4s • 139 to 942 I/Os |
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ds1004700mhz600mbps125gbps+1 | |
PB110C
Abstract: PB124A pt36C SCM15 BA5 904 AF P PL80B PR55D pr94a diode transistor pt36c transistor pt42c
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ds1004500mhz700mhz600mbps+14 | |
PB97A
Abstract: PR45C pr77a
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ds1004700mhz600mbps125gbps+7 | |
PB80D
Abstract: PR87A PR98A PR96A PB110C pr94a diode pt36C pr77a transistor pt36c transistor pt42c
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ds1004500mhz700mhz600mbps+14 | |
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Contextual Info: IGBT MODULE GCA75AA60 UL; E76102 M SanRex IGBT Module GCA75AA60 is designed for high speed, high current switching applications. This Module is electrically isolated and contains two IGBTs connected in series with a fast switching, soft recovery diode (trr = 0.1/rs) reverse connected |
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gca75aa60e76102100/i500/i | |
pb127dContextual Info: LatticeSC/M Family Data Sheet DS1004 Version 02.2, December 2008 LatticeSC/M Family Data Sheet Introduction January 2008 Data Sheet DS1004 Features • High Performance FPGA Fabric • 15K to 115K four input Look-up Tables LUT4s • 139 to 942 I/Os • 700MHz global clock; 1GHz edge clocks |
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ds1004700mhz600mbps125gbps+2 | |
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Contextual Info: LatticeSC/M Family Data Sheet DS1004 Version 01.9, January 2008 LatticeSC/M Family Data Sheet Introduction January 2008 Preliminary Data Sheet DS1004 Features • High Performance FPGA Fabric • 15K to 115K four input Look-up Tables LUT4s • 132 to 942 I/Os |
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ds1004700mhz600mbps125gbps+1 | |
transistor pt36c
Abstract: pb127d PB110C pr82a PB80D umi u26 BA5 904 AF P PB124A PL84C PR55D
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ds1004700mhz600mbps125gbps+11 | |
15JUL
Abstract: s42f diode s42f
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bpv23nfll5-jul-9615-jul-9615jul+2 | |
TCD1254GFG(8Z)Contextual Info: SKM 75GB063D 8% W PX YH+ / * 00 ,4&)5?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 8Z W PX YH :H 8Z W NXO YH :H^_ ¥OO G NOO L 8%'0) W ]X YH ]X L NXO L a PO G 8Z W NPX YH NO f0 8%'0) W PX YH ]X L 8%'0) W gO YH XO L NXO L 8Z W NXO YH hhO |
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75gb063d75gar063dtcd1254gfg(8z | |