M1B MARKING Search Results
M1B MARKING Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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| ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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| MQ80C186-10/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
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| 54121/BCA |
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54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
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| 54F191/QEA |
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54F191/QEA - Dual marked (5962-9058201EA) |
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M1B MARKING Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G S-LMBT2222LT1G S-LMBT2222ALT1G NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site |
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LMBT2222LT1G LMBT2222ALT1G S-LMBT2222LT1G S-LMBT2222ALT1G AEC-Q101 OT-23 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G S-LMBT2222LT1G S-LMBT2222ALT1G NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site |
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LMBT2222LT1G LMBT2222ALT1G S-LMBT2222LT1G S-LMBT2222ALT1G AEC-Q101 OT-23 | |
1P marking
Abstract: LMBT2222ALT1G m1b marking LMBT2222LT1G 1N914 f250300
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LMBT2222LT1G LMBT2222ALT1G 3000/Tape OT-23 1P marking LMBT2222ALT1G m1b marking LMBT2222LT1G 1N914 f250300 | |
MMBT2222LT1G
Abstract: MMBT2222ALT1G m1b marking 1N914 MMBT2222 MMBT2222A MMBT2222ALT3G MMBT2222LT3G 1P SOT-23
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MMBT2222LT1G, MMBT2222ALT1G MMBT2222LT1G OT-23 MMBT2222LT1/D MMBT2222LT1G MMBT2222ALT1G m1b marking 1N914 MMBT2222 MMBT2222A MMBT2222ALT3G MMBT2222LT3G 1P SOT-23 | |
marking code m1b
Abstract: SMMBT2222ALT1G SMMBT2222A MMBT2222LT1-D MMBT2222AL on semiconductor marking code 1P MMBT2222ALT1G
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MMBT2222L, MMBT2222AL, SMMBT2222AL AEC-Q101 OT-23 MMBT2222L marking code m1b SMMBT2222ALT1G SMMBT2222A MMBT2222LT1-D MMBT2222AL on semiconductor marking code 1P MMBT2222ALT1G | |
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Contextual Info: MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique |
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MMBT2222L, MMBT2222AL, SMMBT2222AL MMBT2222L | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage |
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LMBT2222LT1G LMBT2222ALT1G | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.6 A ICM: Collector-base voltage |
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OT-23 MMBT2222LT1 OT-23 150mA 500mA 500mA, 100MHz | |
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Contextual Info: Product specification MMBT2222 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Complementary PNP type available MMBT2907 1 0.55 ● Epitaxial planar die construction. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 |
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MMBT2222 OT-23 MMBT2907) 150mA 150mA | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222 TRANSISTOR NPN SOT–23 FEATURES Genernal Purpose Amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage |
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OT-23 MMBT2222 o00mA 500mA, 150mA, 100MHz | |
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Contextual Info: Transistors SMD Type NPN General Purpose Amplifier MMBT2222 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Complementary PNP type available MMBT2907 1 0.55 ● Epitaxial planar die construction. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 2 +0.1 0.95-0.1 |
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MMBT2222 OT-23 MMBT2907) 500mA 150mA 150mA | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT2222LT1 TRANSISTOR( NPN ) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 1.0 Power dissipation PCM : 0.3 W(Tamb=25℃) Collector current ICM : 0.6 |
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OT-23 MMBT2222LT1 100MHz 037TPY 950TPY 550REF 022REF | |
omron a7dp
Abstract: m1b marking a7dp A7DP-206 A7DP-206-1
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A7DP-206-S06 A7DP-206-S18-1 A7DP-206 A7DP-206-1 1-800-55-OMRON omron a7dp m1b marking a7dp A7DP-206 A7DP-206-1 | |
"Rocker Switch"
Abstract: A8L-21-13N2 m1b marking E41515 en61058-1 A8L-11-11N1 A8L-11-11N2 A8L-11-12N1 A8L-11-12N2 A8L-11-14N2
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A8L-11-11N1 A8L-11-12N1 1-800-55-OMRON "Rocker Switch" A8L-21-13N2 m1b marking E41515 en61058-1 A8L-11-11N1 A8L-11-11N2 A8L-11-12N1 A8L-11-12N2 A8L-11-14N2 | |
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m1b marking
Abstract: 1N4148 LTC1430 LTC1430CN8 LTC1430CS8 LTC3830 MTD20N03HL 12V DC to 35V dC converter circuit diagram G1M1
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LTC1430 000pF 16-Lead LTC1873 LTC1929 1430fa m1b marking 1N4148 LTC1430 LTC1430CN8 LTC1430CS8 LTC3830 MTD20N03HL 12V DC to 35V dC converter circuit diagram G1M1 | |
mosfet short circuit protection schematic diagra
Abstract: m1b marking 1N4148 LTC1430 LTC1430C LTC1430CN8 LTC1430CS8 MTD20N03HL
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LTC1430 000pF 16-Lead LTC1873 LTC1929 1430fa mosfet short circuit protection schematic diagra m1b marking 1N4148 LTC1430 LTC1430C LTC1430CN8 LTC1430CS8 MTD20N03HL | |
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Contextual Info: LTC1430 High Power Step-Down Switching Regulator Controller U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High Power 5V to 3.xV Switching Controller: Can Exceed 10A Output All N-Channel External MOSFETs Constant Frequency Operation—Small Inductor |
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LTC1430 000pF 16-Lead LTC1873 LTC1929 1430fa | |
omron PA 216
Abstract: A7BC m1b marking A7BL-206 A7BL-206-1 A7BL-206-S06 A7BL-207 A7BL-207-1 DIODE IN 5408
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A7BL-206-S06 A7BL-206-S18-1 A7BL-206 A7BL-207 1-800-55-OMRON omron PA 216 A7BC m1b marking A7BL-206 A7BL-206-1 A7BL-206-S06 A7BL-207 A7BL-207-1 DIODE IN 5408 | |
m1b marking
Abstract: MA159 MA159A MA4X159A
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MA4X159A MA159A) SC-61 m1b marking MA159 MA159A MA4X159A | |
MA4S111Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4S111 Silicon epitaxial planar type 1.6±0.05 1.0±0.05 For switching circuits 3 • Features 5˚ • Allowing high-density mounting • Short reverse recovery time trr • Small terminal capacitance Ct |
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2002/95/EC) MA4S111 MA4S111 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4Z1590G Silicon epitaxial planar type For switching circuits • Package ■ Features • Code SMini4-F2 • Pin Name • Two isolated elements contained in one package, allowing highdensity mounting |
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2002/95/EC) MA4Z1590G | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4S111 Silicon epitaxial planar type 1.6±0.05 1.0±0.05 For switching circuits 3 • Features 5˚ • Allowing high-density mounting • Short reverse recovery time trr • Small terminal capacitance Ct |
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2002/95/EC) MA4S111 | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA4Z159 (MA4S159) Silicon epitaxial planar type For switching circuits • Package ■ Features • Code SMini4-F1 • Pin Name • Two isolated elements contained in one package, allowing highdensity mounting |
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2002/95/EC) MA4Z159 MA4S159) | |
LR35535
Abstract: DC solid state relay 12vdc G3M-202PL-US m1b marking G3M-102PL-US G3M-202PL-US-4 G3M-202P-US G3M-203P G3M-203PL G3M-203PL-4
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G3M-202P-US G3M-202P-US G3M-203P LR35535 DC solid state relay 12vdc G3M-202PL-US m1b marking G3M-102PL-US G3M-202PL-US-4 G3M-203P G3M-203PL G3M-203PL-4 | |