M1626 Search Results

M1228

Abstract: m1035 M1229 m1016 M1676 m235 M110 M198 M895 M1626
Contextual Info: 1.040 MAX. 2.00 MAX. P art Number Des ign V oltage C M1228 C M653 C M895 C M1229 C M110 32.0 37.5 40.0 40.0 44.0 45.5 C M1676 F ilament T ype MS C P L ife Hours .45 .83 15.0 32.0 150 500 C -2V C -2V .53 .38 .17 .22 14.0 15.0 6.0 7.6 3,800 400 200 1,000 C -13

CTJ-8-08-M16264A2LGY-BK-PX-FS6

Contextual Info: 1 2 3 4 5 6 7 8 9 A A B B C C SPECIFICATIONS Housing: Contact/Shield: Shield Plating: Contact Plating: Wave Solder Tip Temp: D E F RoHS compliant Rev. Description Date Approved G 2 3 D Series Positions Contacts Style Color Plating Shield/Panel Grounds CTJ

sMD .v05

Abstract: smd V05 smd code Ub
Contextual Info: CYPRESS SEMICONDUCTOR ID E D I SSflTbbE 0005b30 3 | T -4 6 -2 3 -1 4 M1626 PRELIMINARY " r CYPRESS r SEMICONDUCTOR 64K x 16 Static RAM Module Features Functional Description • High-density 1M bit SRAM Module The M1626 is a high performance 1Mbit Static RAM module organized as 64K

Contextual Info: M1626 PRELIMINARY CYPRESS SEMICONDUCTOR 64K x 16 Static RAM Module Features Functional Description • High-density 1M bit SRAM Module The M1626 is a high performance 1Mbit Static RAM module organized as 64K words by 16 bits. This module is con­ structed from four 16K x 4 SRAMs

M1228

Contextual Info: 1.040 MAX. 2.00 MAX. P art Number Des ign V oltage C M1228 C M653 C M895 C M1229 C M110 32.0 37.5 40.0 40.0 44.0 45.5 C M1676 F ilament T ype MS C P L ife Hours .45 .83 15.0 32.0 150 500 C -2V C -2V .53 .38 .17 .22 14.0 15.0 6.0 7.6 3,800 400 200 1,000 C -13

Contextual Info: engineered to light up your design www.vcclite.com 1.800.522.5546 S-8 Double Contact Bayonet Base 1.040 MAX. 2.00 MAX. P art Number Des ign V oltage C M1228 C M653 C M895 C M1229 C M110 32.0 37.5 C M1676 40.0 40.0 44.0 45.5 P art Number Des ign V oltage F ilament