M14D2561616A Search Results
M14D2561616A Price and Stock
Elite Semiconductor Memory Technology Inc M14D2561616A-2.5BGDDR2 256Mb 16Mx16 400MHz BGA |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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M14D2561616A-2.5BG | 100 |
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M14D2561616A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ESM T M14D2561616A DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe DQS, DQS ; DQS can be disabled for single-ended data strobe operation. |
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M14D2561616A | |
Contextual Info: ESMT DDR II SDRAM M14D2561616A 4M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe DQS, DQS ; DQS can be disabled for single-ended data strobe operation. |
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Contextual Info: ESM T M14D2561616A 2L (Preliminary) DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. |
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M14D256Contextual Info: ESMT Preliminary M14D2561616A (2L) DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. |
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M14D2561616A M14D256 | |
Contextual Info: ESMT M14D2561616A 2E DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. |
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M14D2561616A
Abstract: DDR-533
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M14D2561616A M14D2561616A DDR-533 | |
M14D256
Abstract: ESMT M14D2561616A M14D2561616A DDR2-667 DDR2-800
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M14D2561616A M14D256 ESMT M14D2561616A M14D2561616A DDR2-667 DDR2-800 | |
Contextual Info: ESMT M14D2561616A 2E Automotive Grade DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. |
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Contextual Info: ESM T M14D2561616A Operation Temperature Condition TC -40 C~95 C DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle |
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Contextual Info: ESMT Preliminary M14D2561616A (2E) DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. |
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