M13S2561616A Search Results

Contextual Info: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 Revision 1.1 (09 May. 2007) - Modify PD, DC specifications and MRS Revision 1.2 (12 Jun. 2007)

Contextual Info: ESM T M13S2561616A 2K DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition

Contextual Info: ESM T M13S2561616A 2A Automotive Grade DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition

esmt m13s2561616a

Abstract: M13S2561616A -5T M13S2561616A
Contextual Info: ESMT M13S2561616A Operation Temperature Condition -40~85°C Revision History Revision1.0 19 Oct. 2007 - Original Revision1.1 (06 Dec. 2007) - Add BGA package Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2007 Revision : 1.1 1/49 ESMT

Contextual Info: ESMT Prelinminary M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Apr. 2006 Revision : 0.1 1/48 ESMT Prelinminary DDR SDRAM M13S2561616A 2M x 16 Bit x 4 Banks Double Data Rate SDRAM

M13S2561616A -5T

Abstract: M13S2561616A esmt m13s2561616a
Contextual Info: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 Revision 1.1 (09 May. 2007) - Modify PD, DC specifications and MRS Revision 1.2 (12 Jun. 2007)

Contextual Info: ESM T M13S2561616A 2K Operation Temperature Condition -40ｔC~85ｔC DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK )

Contextual Info: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 Revision 1.1 (09 May. 2007) - Modify PD, DC specifications and MRS Revision 1.2 (12 Jun. 2007)

esmt m13s2561616a

Abstract: M13S2561616A
Contextual Info: ESMT M13S2561616A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )

Contextual Info: ESMT M13S2561616A 2K DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition

Contextual Info: ESMT Preliminary M13S2561616A (2S) DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features  Double-data-rate architecture, two data transfers per clock cycle  Bi-directional data strobe (DQS)  Differential clock inputs (CLK and CLK ) 

DDR SDRAM

Contextual Info: ESMT M13S2561616A 2A Operation Temperature Condition -40°C~85°C DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK )

X16V

Contextual Info: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 Revision 1.1 (09 May. 2007) - Modify PD, DC specifications and MRS Revision 1.2 (12 Jun. 2007)

Contextual Info: ESM T M13S2561616A 2A Operation Temperature Condition -40°C~85°C DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK )

DDR SDRAM

Abstract: esmt m13s2561616a
Contextual Info: ESMT M13S2561616A 2A Automotive Grade DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition

Contextual Info: ESMT Preliminary M13S2561616A (2S) DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features  Double-data-rate architecture, two data transfers per clock cycle  Bi-directional data strobe (DQS)  Differential clock inputs (CLK and CLK ) 

Contextual Info: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 (2Mx16 Î 4Mx16) Revision 1.1 (09 May. 2007) - Modify PD, DC specifications and MRS Elite Semiconductor Memory Technology Inc.

Contextual Info: ESMT M13S2561616A 2K Operation Temperature Condition -40°C~85°C DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK )

M13S2561616A -5T

Abstract: CKE 2009 M13S2561616A-4TG M13S2561616A esmt m13s2561616a
Contextual Info: ESMT M13S2561616A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )

Contextual Info: ESMT M13S2561616A 2A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition

Contextual Info: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 (2Mx16 4Mx16) Elite Semiconductor Memory Technology Inc. Publication Date : Jun. 2006 Revision : 1.0

M13S2561616A-5TG

Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
Contextual Info: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now