M11 MARKING TRANSISTOR Search Results

M11 marking transistor

Abstract: DMN100-7-F DMN100
Contextual Info: SPICE MODELS: DMN100 DMN100 Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · SC-59 Extremely Low On-Resistance: 170mW @ VGS = 4.5V A High Drain Current: 1.1A D Ideal for Notebook Computer, Portable Phone, PCMCIA

M11 marking transistor

Abstract: DMN100 DMN100-7-F
Contextual Info: DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Mechanical Data • • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA

marking code 54

Abstract: DMN100 DMN100-7-F
Contextual Info: DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • Mechanical Data • • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits

Contextual Info: General Purpose Transistors NPN Silicon BCW65ALT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB Collector–Emitter Voltage V CEO 32 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage

BCW65ALT1

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon BCW65ALT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 32 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage V EBO

M11 marking

Contextual Info: DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • Mechanical Data • • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits

marking CF

Contextual Info: Ordering number: EN 1780A i 2SC3650 No.l780A NPN Epitaxial Planar Silicon Transistor SAMYO High hpE> Low-Frequency General-Purpose Amp Applications i Applications . LF amp, various drivers, muting circuit Features . High DC current gain hpE=800 to 3200 . Low collector-to-emitter saturation voltage [VcE(sat)“0* ^

3SK184

Abstract: 3SK192 3sk220 3SK139 h024 3sk200 3sk169 GN1043 4 pin hall 3SK14
Contextual Info: —5/ Mini Type 4-pin Package • Outline U n it I mm Diodes 2 -8 ‘ o 3 0 .6 5 t Q 1 5, a w rn 15 — ,0 .6 5 t 0 . 1 5 m - 5 -8 1 (4 • > '« . A, it it i* á 7 ^ r- y T \ r „ iS h £ £ ¥ CM CM <*> ‘ o |o o l ÒK t t S t ? n £ ' M J CD 7 ^ M 'U * - v - y 7 \

PG-SOT-23

Abstract: TLE4961-1M
Contextual Info: TLE4961-1M High Precision Automotive Hall Effect Latch Technical Product Description Rev. 1.1, 2012-04-12 Sense & Control Edition 2012-04-12 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

ICE65L04F

Abstract: ICE65L01F d flip flop 7475 sublvds lvds d flip flop 7475 circuit diagram ice65l04 ICE65 442-665 ICE65L04F-L 48948
Contextual Info: iCE65 Ultra Low-Power mobileFPGA™ Family March 30, 2012 2.42 Data Sheet  First high-density, ultra low-power Figure 1: iCE65 Family Architectural Features single-chip, SRAM mobileFPGA family specifically designed for hand-held applications and long battery life

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

DS600

Abstract: XA95144XL AEC-Q100 XA9500XL XAPP114 XAPP427 XC9500XL Xa9500 2N6210
Contextual Info: XA95144XL Automotive CPLD DS600 v1.1 April 3, 2007 Features • • • • • • • • • • • • AEC-Q100 device qualification and full PPAP support available in I-grade. Guaranteed to meet full electrical specifications over TA = -40° C to +85° C (I-grade)

Contextual Info: XA95144XL Automotive CPLD R DS600 v1.0 January 12, 2007 Product Specification Features Power Estimation • Power dissipation in CPLDs can vary substantially depending on the system frequency, design application and output loading. Each macrocell in an XA9500XL automotive device

SMD Resistors, Arrays and Networks

Abstract: STR 20012 WSK 013 070 eb potentiometer vishay draloric 61 Mini Melf MMA 0204-50 a006 mosfet Micro MELF "Land Pattern" tca 4401 tuner uv 915 Schematic MINIMELF resistors
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd resistors, arrays and networks vishay vse-db0010-0611 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

M21 mosfet

Abstract: Generic N type Mosfet NMOSFET 4TPE150M C3216X5R0J226M MMBT2222A-7 MSOP-10 SC4607 SC4607IMSTR RESISTOR NETWORK SMD rp 10PIN
Contextual Info: SC4607 Low Input, High Efficiency Synchronous, Step Down Controller POWER MANAGEMENT Description Features ‹ ‹ ‹ ‹ ‹ ‹ ‹ The SC4607 drives external N-channel MOSFETs with 1A peak current. A non-overlap protection is provided for ‹ The SC4607 is a voltage mode step down buck regulator controller that provides accurate high efficiency power

SMD MARKING code 613 sot23

Contextual Info: TLE4961-1M High Precision Automotive Hall Effect Latch Data Sheet Revision 1.0, 2012-07-20 Sense & Control Edition 2012-07-20 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

Contextual Info: LH7A400 32-Bit System-on-Chip Data Sheet FEATURES • Three Programmable Timers • 32-bit ARM9TDMI RISC Core – 16KB Cache: 8KB Instruction and 8KB Data – MMU Windows CE™ Enabled – Up to 250 MHz; see Table 1 for options • Three UARTs – Classic IrDA (115 kbit/s)

XA2C128-8CPG132Q

Contextual Info: XA2C128 CoolRunner-II Automotive CPLD R DS554 v1.0 October 31, 2006 Features • • • • • • AEC-Q100 device qualification and full PPAP support available in both I-grade and extended temperature Q-grade Guaranteed to meet full electrical specifications over

Contextual Info: TPS60151 www.ti.com . SLVSA02 – SEPTEMBER 2009 TPS60151 5V/140mA Charge Pump Device

Contextual Info: TPS60151 www.ti.com . SLVSA02 – SEPTEMBER 2009 TPS60151 5V/140mA Charge Pump Device

recommended layout CSG324

Abstract: CSG324 SPARTAN 6 UG385 spartan 6 LX150 XC6SLX4 2 CSG225 I XC6SLX4 CSG225 UG385 LX150 AB p89 LX100T
Contextual Info: Spartan-6 FPGA Packaging and Pinouts Advance [optional]Product Specification UG385 v1.0 June 24, 2009 [optional] Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development

vhdl code of floating point adder

Abstract: 11F32 AEC-Q100 LVCMOS15 LVCMOS25 LVCMOS33 XA2C128 XAPP427 XAPP399
Contextual Info: XA2C128 CoolRunner-II Automotive CPLD R DS554 v1.1 May 5, 2007 Features • AEC-Q100 device qualification and full PPAP support available in both I-grade and extended temperature Q-grade • Guaranteed to meet full electrical specifications over TA = -40° C to +105° C with TJ Maximum = +125° C