M-FLAT A7 Search Results

4032 k30

Abstract: TI61 TMP93CW46AF p838h QFP100-P-1414-0 TLCS-90 TMP93CW46A TMP93PW46A P93CW46A DM11
Contextual Info: TOSHIBA TMP93CW46A Low Voltage / Low Power CMOS 16-bit MICROCONTROLLERS TMP93CW46AF 1. OUTLINE AND DEVICE CHARACTERISTICS The TMP93CW46AF is high-speed advanced 16-bit microcontrollers to enable low voltage and low power consumption operation. The TMP93CW46AF is housed in 100pin m ini flat package.

CY7C09099V

Contextual Info: fax id: 5210 CYPRESS CY7C09079V/89V/99V CY7C09179V/89V/99V PRELIMINARY 3.3V 32K/64K/128K x 8/9 Synchronous Dual Port Static RAM Features • True Dual-Ported mem ory cells which allow sim ulta­ neous access of the same mem ory location • 6 Flow-Through/Pipelined devices

Contextual Info: ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY FUJITSU M B M 100484A -8 August 1988 Edition 2.0 16384-BIT BIPPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100484A is fully decoded 16384-bit ECL read/write random access memory designed for high-speed scratch pad, control and buffer storage

MHW1244N

Abstract: MHW1244
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHW1244N Rev. 4, 5/2006 CATV Amplifier Module Features • Specified for 12 - , 22 - and 26 - Channel Loading • Excellent Distortion Performance • Superior Gain, Return Loss and DC Current Stability over Temperature

A12L

Abstract: A13L CY7C006 CY7C016 C0066
Contextual Info: with Sem, In t, Busy CY7C006 CY7C016 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 16K x 8 organization CY7C006 • 16K x 9 organization (CY7C016)

Contextual Info: FU JITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10484-15 F e b ru a ry 1 9 8 8 E d itio n 2 .0 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 10484 is fully decoded 16384-bit ECL read/write random access memory designed for high-speed scratch pad, control and buffer storage

HM101494-10

Abstract: HM101494-12
Contextual Info: HM100494/HM101494 Series 16384-word x 4-bit Fully Decoded Random Access Memory The HM100494/HM101494 are ECL 100K compatible, 16384-word by 4-bit read/write random access memory developed for high speed systems such as scratch pads and control/buffer storage.

Contextual Info: FUJITSU MICROELECTRONICS F U J IT S U 23E D • 374*171*2 OQOaibT fi ■ ECtL4096'-BIT%í¿i BIPOLARRANDOM* ACCESS. MEMORY MBM10470A-7 August 1988 Edition 1,0 4096-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM10470A Is a fully decoded 4096-blt ECL read/w rite random access

Contextual Info: fax id: 5214 CYPRESS CY7C008V/009V CY7C018V/019V PRELIMINARY 3.3V 64K/128K x 8/9 Dual-Port Static RAM Features True Dual-Ported mem ory cells which allow sim ulta­ neous access of the same mem ory location 64K x 8 organization CY7C008 128K x 8 organization (CY7C009)

schematic diagram crt tv samsung

Abstract: schematic diagram crt tv sharp schematic diagram inverter lcd monitor fujitsu P24R10 37 TV samsung lcd Schematic circuit diagram pcb circuit diagram of crt tv samsung FLC31SVC6S toshiba notebook schematic diagram free CT1642 samsung crt monitor circuit diagram
Contextual Info: 65550/554/555 & 69000 HiQVideo Series Application Note Book Revision 1.1 December 1998  Copyright Notice Copyright 1998 Chips and Technologies, Inc., a subsidiary of Intel Corporation. ALL RIGHTS RESERVED. This manual is copyrighted by Chips and Technologies, Inc., a subsidiary of Intel Corporation. You may not reproduce, transmit ,

LRD12

Abstract: IRD12
Contextual Info: 54SX Family FPGAs Features • 3.3VOperation with 5.0VInput Tolerance High • Low Power Consumption Perform ance • 320 MHz I nternal Performance • Deterministic, User-ControlIableTiming • 4.0 ns Cl ock-to-Out Pin-to-Pin • Unique, In-System Diagnostic and Debug Facility with

HX6856

Contextual Info: b3E D 4551072 0000^03 3S? • HONEYl i l ELL/ S H0N3 Honeywell S E C Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM - SO I HX6828 FEATURES OTHER RADIATIO N • Full Military Temperature Operation -55°C to 125°C Fabricated with R IC M O S Silicon on Insulator

R2005280L

Abstract: DIN45004B
Contextual Info: R2005280L R2005280L Low Current 5MHz to 200MHz Si REVERSE HYBRID (LOW CURRENT) Package: SOT-115J Product Description Features The R2005280L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance.

R2005240

Abstract: DIN45004B
Contextual Info: R2005240 R2005240 Low Current 5MHz to 200MHz Si REVERSE HYBRID (LOW CURRENT) Package: SOT-115J Product Description Features The R2005240 is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance.

Contextual Info: IMS1223M CMOS High Performance 1K x 4 Static RAM MIL-STD-883C M HO S’ DESCRIPTION FEATURES The INMOS IMS1223M is a high speed CMOS 1Kx4 static RAM processed in full compliance to MIL-STD883C. The IMS1223M provides performance enhance­ ments with the additional CMOS benefits of lower power

Contextual Info: Honeywell Military & Space Products 32K x 8 ROM— SOI HX6656 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |am Process (Leff = 0.6 |im) • Read Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)

xc9572xl pin configuration

Abstract: XC9572XL XC9572XL-7VQ44I DS057 xc9572xl pin XC9572XL-10CS48C XAPP114 XC9500XL XC9572 XC9572XL-10
Contextual Info: XC9572XL High Performance CPLD R DS057 v1.4 August 21, 2003 5 Preliminary Product Specification Features Power Estimation • • • • Power dissipation in CPLDs can vary substantially depending on the system frequency, design application and output loading. To help reduce power dissipation, each macrocell

Contextual Info: ADVANCE INFORMATION All information in this data sheet Is preliminary and subject to change. J a/93 V \ Æ X A J V \ Precision, 8-C hannel/D ual 4-C hannel, H igh-Perform ance, CMOS A nalog M u ltip lexers These muxes operate with a single supply +10V to +30V or

AX306

Contextual Info: ADVANCE INFORMATION All information in this data sheet is preliminary and subject to change. Am AM • Am Am Am Precision, 16-Channel/Dual 8-Channel, High-Performance CMOS Analog M ultiplexers , The M AX306/MAX307 are fa b rica te d with M axim 's new improved silicon-gate process. Design improvements yield

Contextual Info: PRELIMINARY , First page of data sheet in progresscontact factory for full data sheet. JVKÆXAJVK am Im proved, 16-Channel/Dual 8-Channel H igh-Perform ance, CMOS Analog M ultip lexers The DG406/DG407 are fabricated with Maxim’s new improved silicon-gate process. Design improvements yield

CERAMIC LEADLESS CHIP CARRIER package

Abstract: WMS128K8V-XXX
Contextual Info: WMS128K8V-XXX 128Kx8 3.3V MONOLITHIC SRAM PRELIMINARY* FEATURES • Access Times 15, 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Revolutionary, Center Power/Ground Pinout JEDEC Approved • 32 lead Ceramic SOJ Package 101 • 32 lead Ceramic Flat Pack (Package 220)*

C1983 16

Abstract: C1983 volum LM audio circuit graphic equalizer LM IC LM 1246 LMC835
Contextual Info: LMC1983 National Semiconductor LMC1983 Digitally-Controlled Stereo Tone and Volume Circuit with Three Selectable Stereo Inputs • Loudness com pensation General Description The LM C1983 is a m onolithic integrated circuit th a t provides volum e, balance, tone bass and treble , loudness controls

C91C

Abstract: 04H9X WS128K32N-XH1X 01H9X
Contextual Info: WS128K32-XXX 128Kx32 SRAM MODULE, SMD 5962-93187 FEATURES n Access Times of 70, 85, 100, 120ns n Commercial, Industrial and Military Temperature Ranges n MIL-STD-883 Compliant Devices Available n 5 Volt Power Supply n Packaging • 66-pin, PGA Type, 1.075 inch square, Hermetic

Contextual Info: ADVANCE INFORMATION Am29240 , Am29245™, and Am29243 Advanced Micro Devices High-Performance RISC Microcontrollers Am29240 MICROCONTROLLER BLOCK DIAGRAM ✓ Clock/ Control Lines' fS Control/Status MEMCLK Serial Data Printer/Scanner Video ROM Chip Selects