M 552 DIODE Search Results

IXYS MCC 425

Abstract: IXYS MCC 550
Contextual Info: Date: 27.06.2012 IXYS Data Sheet Issue: 2 Thyristor/Diode Modules M## 552 Absolute Maximum Ratings VRRM VDRM [V] MCC MCD MDC 1200 552-12io2 552-12io2 552-12io2 1400 552-14io2 552-14io2 552-14io2 1600 552-16io2 552-16io2 552-16io2 VOLTAGE RATINGS VDRM VDSM

Contextual Info: p PriM 9H 8!! iQ Q Q Revised A ugust 1999 EMICONDUCTGRTM 74F552 Octal Registered Transceiver with Parity and Flags General Description Features The 74F 552 octal transceiver contains tw o 8-bit registers for te m p o ra ry storage o f data flowing in either direction.

Contextual Info: HC-5524 Semiconductor August 1998 EIA/ITU 24V PABX SLIC with 25mA Loop Feed File Number 2798.5 Features • DI M on olithic High Voltage Process T he H C -552 4 tele ph on e S u b scrib e r Line Interface C ircuit integrates m ost o f the B O R S C H T fun ctions on a m on olithic

d 4464 c

Contextual Info: 552 EHSemiconductor National 54F/74F552 Octal Registered Transceiver with Parity and Flags General Description T h e 'F552 octa l transceiver co ntains tw o 8-bit registers fo r te m p o ra ry storage o f data flow ing in e ithe r direction. Each register has its own clo ck pulse and clo ck enable input as

NDL5731P

Abstract: DL-5735 DL5735 DL-57
Contextual Info: N E C ELECTRONI CS INC bSE D • bME7SES 0037=552 'JOT INECE DATA SHEET NEC LASER DIODE MODULE NDL5 7 3 1 P ELECTRON DEVICE 1 310 nm O PTICA L FIBER COM M UNICATIONS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION NDL5731P is a 1 310 nm laser diode DIP module with singlemode fiber and internal thermo-electric cooler. It is designed for a

GM5ZR01200A

Abstract: 18198 GM5ZE01200A GM5ZG01200A GM5ZJ01200A GM5ZS01200A GM5ZV01200A IR sensor for 40khz EIAJ C-3
Contextual Info: No. SHARP CORPORATION DG-98Y016 TECHNICAL LITERATURE FOR Light Emitting Diode MODEL No. DATE G M 5 Z R 0 1 2 Q 0 A s e r ie s 1 3 -N o v -9 8 1. These specification sheets include m aterials protected under the copyright o f Sharp Corporation "Sharp" . Please do not reproduce or cause anyone to reproduce them without Sharp's consent

733HC

Abstract: CCDs Charge Coupled Devices tr4l 2SC372 OPA2048CA QPA2048CA photo transistor array
Contextual Info: OKI electronic QPA2 0 4 8 CA com ponents Self-Scanning Line Sensor GENERAL DESCRIPTION The OPA2048CA is a 2,048-bit, 1-dimensional diode array comprised of PN junction photodetector diodes and CCDs charge coupled devices . By using a 2-phase clock pulse, transfer pulse, and reset

SSD1606

Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1606 Advanced information 4GS Active Matrix EPD 128 x 180 Display Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without notice.

MM-555

Abstract: MM452 gbs transistors MM5559 mm450 MM555 MM551 MM-552
Contextual Info: D lffilM . M M 450/M M 550, M M 451/M M 551 M M 4 5 2 /M M 5 5 2 , M M 455/M M 555 M O S-F E T Sw itch e s FEATURES GENERAL Large A nalog In p u t— ± 1 0 V Low S u pply Voltage— V B U LK = + 1 0 V V GG = - 2 0 V Typical O N Resistance— V m = - 1 0 V , 1 5 0 fi

8XC552

Abstract: 12MH2 80C51-based
Contextual Info: P hilips Sem iconductors 80C51-Based 8-Bit M icrocontrollers 80C51 Family Derivatives 8XC552/562 overview 8XC552 OVERVIEW 83C562 OVERVIEW The 8XC552 is a stand-alone high-performance microcontroller designed for use in real-time applications such as instrumentation, industrial control, and

Contextual Info: SIEMENS Silicon Variable Capacitance Diode BB 804 • For FM tuners • Monolithic chip with common cathode for perfect tracking of both diodes • Uniform "square law” characteristics • Ideal Hifi tuning device when used in low-distortion, back-to-back

Contextual Info: S IE M E N S Silicon Switching Diode Array SMBD 2837 SMBD 2838 • For high-speed switching applications • Common cathode Type Marking Ordering Code tape and reel S M B D 2837 S M B D 2838 sA5 sA4 Q68000-A8487 Q68000-A8437 Pin Configuration Package1) ï

Contextual Info: SIEMENS BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type Marking Ordering code tape and reel BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 G3 G4

HP 2601

Abstract: hp 2611 gi 2601 HCPL-0611 MCL2601 6N137 HCPL-0600 HCPL-0601 HCPL-2601 OC40
Contextual Info: — GND L E D -P h o to Diode Buffered by T T L C om patible Logic with Control Gate LED - y * — K +TTL n s tt & P S2007B B £ % If m ax m A 'A Vr m ax (V ) £ 2 m Pd\ m ax (m W ) 10 5 - VcE m ax (V ) V cc* 'A I OL m ax (m A ) m » n £ PD2 m ax (m W )

BB619

Abstract: 552 diode
Contextual Info: 711002b G0ba37*ì B3Q I PHIN BB619 VHF VARIABLE CAPACITANCE DIODE The BB619 is a VHF variable capacitance diode in planar technology w ith a very high capacitance ratio intended fo r VHF-band B up to 460 MHz in all-band tuners. The diode is encapsulated in a hermetically sealed SOD 123 plastic envelope suitable fo r surface mounting.

MA40420

Abstract: schottky diodes Anti parallel
Contextual Info: MA40401/MA40422 Series GaAs Schottky Mixer Diodes Features • VERY LOW NOISE FIGURE X, W-BAND ■ LOW JUNCTION CAPACITANCE ■ LOW SERIES RESISTANCE ■ WIDE RANGE OF AVAILABLE PRODUCT Description This family of Gallium Arsenide Schottky diodes is fabri­

552 diode

Abstract: sot723
Contextual Info: DAN222M3T5G Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium.

Contextual Info: SDD66 40mm RECTIFIER DIODE 7000V / 520A The SDD66 rectifier diode features a nominal 40mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

Contextual Info: 200 mW EPITAXIAL PLANAR DIODES D a ta Sheet Semiconductor Mechanical Dimensions Description Pin 3 1 P ln lN C ! Pin 2 Features • PLANAR PROCESS ■ INDUSTRY STANDARD SOT-23 PACKAG E ■ 200 mW POWER DISSIPATION ■ M EETS UL SPECIFICATION 94V-0 E le c t r ic a l C h a r a c t e r is t ic s 6

Contextual Info: IN6461 thr IN6468 and IN6469 thru IN6476 Microsemi Corp. ? Thp diode experts i SANTA A N A , CA F o r m o r e i n f o r m a t i o n call: 714 9 7 9 -8 2 2 0 TRANSIENT SUPPRESSORS FEATURES • HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR M O ST CRITICAL CIRCUITS.

bc 549 diode

Contextual Info: HL1341AC Laser Diode Description H L 1341A C is a 1.3 /um In G aA sP distributedfeedback D FB laser diode with buried h e te ro ­ stru ctu re. It is su itable as a light source in high-bit-rate, long-distance fiberoptic com m u n icatio n s and v ario u s o th e r types o f optical equipm ent.

HA 16630

Abstract: 910nm Infrared Emitting Diode OLD224 INFRARED EMITTING DIODE TO18 1000 nm light emitting diode
Contextual Info: O K I electronic OLD224 components GaAlAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD224 is a high-output GaAl As infrared light em ission micro-diode sealed w ith a transparent epoxy resin in a TO-18 case. Its light em ission w ave length is peaks at 910 nm. Because of its high

Contextual Info: S i GEC PLESSEY S E M I C O N D U C T O R S DS4177-1.2 MDFB85 FAST RECOVERY DIODE APPLICATIONS • Freewheel Diode. ■ D.C. Motor Drives. KEY PARAM ETERS 4500V RRM 2130 A ! f AV 20000A FSM 2200|iC V ■ Welding. Q. ■ High Frequency Rectification. ■ 6.0|IS

PIN DIODE

Abstract: MA8334 MA8334-200
Contextual Info: MA8334 Series RF M ultithrow PIN Diode Switch Modules Features • SP2T AND SP3T DESIGNS ■ HIGH POWER CAPABILITY UP TO 1 kW OF CW ■ LOW DISTORTION ■ HIGH RELIABILITY ■ FREQUENCY RANGE FROM 10 MHz TO 1 GHz ■ LOW INSERTION LOSS ■ HIGH ISOLATION