M 3101 Search Results

82S25

Abstract: N74S189N N3101A N74S189 N82S25 N82S25N S54S189 S82S25
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 64-BIT BIPOLAR SCRATCH PAD MEMORY 16x4 82S25 (O.C.), 3101A (O.G.), 54/74S189 (T.S.) DESCRIPTION APPLICATIONS T h is fa m ily o f R ead/W rite R andom Access M em ories is ideal fo r use in scra tch pad and high-speed b u ffe r m em ory a pp licatio n s.

N82S185

Abstract: N82S141 93427c 74S200 N82S147 6331-1 6301-1 prom 74S301 DM74S287 PROM intel 3601
Contextual Info: BIPOLAR M E M O R Y M AY 1962 8192-BIT BIPOLAR PROM 2 0 4 8 x 4 82S185(T.S.) DESCRIPTIO N FEATURES T h e 82S 185 is fie ld p ro g ra m m a b le , w h ic h

Contextual Info: 5mm LED Panel Mount Indicator 2 & 3 Leaded LEDs, Bi-Color .250” Mounting Hole, Snap In Mounting D ia lî g h t 559 Series BENEFITS S T R A IG H T T E R M IN A L S - T E R M IN A L O P T IO N 1 7 .6 2 [.3 0 0 ] M IN 3001 R/G Red Anode 3101 R/G Red Cathode

Contextual Info: M S W A M G IS O M F C Q M Ä Y I M Intel386 SXSA EMBEDDED MICROPROCESSOR • Static lntel3 8 6 TM CPU Core — Low Power Consumption — Operating Power Supply 4.5V to 5.5V— 25 MHz and 33 MHz 4.75V to 5.25V— 40 MHz — Operating Frequency SA-40 = 40 MHz

HARRIS CS80C286

Contextual Info: iT ! H A R R 80C286 I S January 1992 High Perform ance M icroprocessor W ith M em ory M anagem ent and Protection Features • C o m p a tib le w it h N M O S 8 0 2 8 6 • W id e R a n g e o f C lo c k R a te s : -D C to 2 5 M H z 8 0 C 2 8 6 - 2 5 -D C to 2 0 M H z ( 8 0 C 2 8 6 - 2 0 )

Contextual Info: TOSHIBA TMP87PS64 CMOS 8-BIT MICROCONTROLLER TMP87PS64F The 87PS64 is a One-Tim e PROM m icrocontroller w ith lo w -p o w er 480K bits electrically program m able read only m em ory fo r th e 87CS64/C P64/C M 64 system ev alu a tio n . 87CS64/CP64/CM64. The 87PS64 is pin co m p atib le w ith th e

Contextual Info: 8MA OSM H » o tp tic lM Flald Raplaoaabla Launchars MIL-C-83617/10 ea Military Part Number M/A-COM Ina M/A-COM Part Number -31001 -31003 -31003 -31006 -31016 -31016 2062-8010-92 2062-8021-02 2062-6023-02 2062-8024-02 2062-8033-02 2062-8034-92 Outline 83

Zilog 85230

Abstract: MVME2604 MVME761-001 53C825A PMCSPAN1-001 MVME712M SCANBE MVME2604-3361 MVME2600 SCSI 100 pin female panel mount
Contextual Info: Datasheet M V M E 26 0 0 S e r i e s V M E P ro c e s s o r M o d u l es PMC expansion combined with a high-performance VME processor The MVME2600 series is a family of VME processor modules based on the Motorola PowerPlus VME architecture with PowerPC architecture-compatible microprocessors.

TFK U 3212 M

Abstract: TFK U 3212 telefunken rc 890 cd LIN 5642 G tfk 623 ta 8659 cn str f 6268 cd 3313 eo PEX 8603 ORP 12
Contextual Info: Tem ic Sales Offices S e m i c o n d u c t o r s Addresses Europe Denmark T E M IC D ansk c /o A E G Industri A/S R oskildevej 8 -1 0 2 620 A lbeitslund Tel: 45 4 2 6485 22 Fax: 45 43 6262 28 T E M IC T E L E F U N K E N m icro ­ electro n ic G m bH K ruppstrasse 6

Contextual Info: P iiy iM O I M O W I M80C187 80-BIT NUMERIC PROCESSOR EXTENSION M ilitary m High Performance 80-Bit Internal Architecture • Two to Three Times M8087 Performance at Equivalent Clock Speed ■ Implements ANSI/IEEE Standard 7541985 for Binary Floating-Point

Contextual Info: _ SÌ9428DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET New Product PRODUCT SU M M AR Y V p s (V) B o s to n ) (q ) 0.03 @ V qs - 4.5 V I d (A) ±6 20 0.04 V q S = 2.5 V ± 5 .2 u SO -8 It't 3^ O Ô Si N-Channel M OSFET A B S O L U T E M A X I M U M R A T IN G S ( T A ~ 2 5 C U N L E S S O T H E R W IS E N O T E D )

SCANBE ejector

Abstract: mk48t59 PMCSPAN-002 MVME2300 dec 21140 scanbe handle SCANBE VME to isa bridge VME COnnector MVME2304-0141
Contextual Info: Datasheet M V M E 23 0 0 S e r i e s V M E P ro c e s s o r M o d u l es High-performance expansion VME board with the ability to customize applications The MVME2300 series of VME boards provides the performance of Motorola’s PowerPlus Architecture, and the ability to fully customize your application with two PCI

dual jfet vhf

Abstract: K308-18 U430-1 k308 J308-10 U308-10 U311 U430
Contextual Info: a z n-channel JFET B designed for . . . S ilic o n ix V H F / U H F Am plifiers B E N E F IT S Front End High Sensitivity Am plifiers • Industry Standard Oscillators • High Power Gain 16 d B at 100 M H z, C om m on Gate 11 d B at 45 0 M H z, C om m on Gate

Temic Semiconductors acceleration

Abstract: spindle and VCM motor controller sh ac motor speed control circuit diagram with calcu
Contextual Info: AN711 TEMIC S e m i c o n d u c t o r s HDD Servo Design Using the SÌ9990CS Introduction S m all-fo rm factor hard disk drive H D D rotating m em o ries place several d ifficult c o n strain ts on the d esig n ers o f servo m ech an ism s fo r head p o sitio n in g and

eurosil

Abstract: ic tda 6108 tda 9351 SE116 BH 37 933 Eurosil Electronic tfk 635 EL131 TDA 785 LA
Contextual Info: Te m ic TELEFUN KEN Semiconductors Addresses Sales Offices Europe Hungary Sweden T E M IC D a n sk T EM 1C T E L E FU N K E N T E M IC T E L E F U N K E N T E M IC N o rd ic A B c /o A E G D a n s k A k tie s e ls k a b m ic ro e le c tro n ic ìm h H K r u p p s tr a s s e 6

Contextual Info: Alle Rechte vorbehalfen/ M l rights reserrei 2 3 4 5 6 A 30.7 R r~ T ~ l R HarfHigh Den sity module 09 U 025 3101 0^1 4A 50V O J k V 3 HARTING xxxxxxxxx n\ M l D iie n sio n s in •■ y O rig in a l S iz e DIN A 4 Techn. Character. Dat. D e ta il. Insp.

PCM-59

Contextual Info: | p I 1.0 Product Description The Adaptive Differential Pulse Code Modulation A D PCM algorithm is a transcoding operation which consists o f encoding 64 kbit/s Pulse Code M odula­ tion (PCM ) to 16, 24, 32, or 40 kbit/s A D PC M and decoding from A D PC M to 64

Contextual Info: Alle tedile Vorbehalten/ All rights m m e d M3x1 0 Osi r. ^ r. V .fr . rs^^ r. ?r.^ r.* r . ^ ^ ^ r.¡y, fr . rsr ?r. ^ Montageausschn pane! cut out 104 -y rvi <*& m 5 A 95 03.3 AH Oiiensions in •■ licht lolerierle Hasse/ free si/t lolenotes lechn. [h in d e r.

1N589

Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
Contextual Info: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993

Contextual Info: PRELIMINARY COM’L: -7/10/12/15 IND: -10/12/15/20 The MACH5-512/MACH5LV-512 AMD£I M A C H 5 -5 1 2 /1 2 0 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /1 6 0 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /1 8 4 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /1 9 2 -7 /1 0 /1 2 /1 5 /2 0 M A C H 5 -5 1 2 /

Contextual Info: M O S E L V IT E L IC V53C832L H IG H PER FO R M A NC E 3.3 VOL T 2 5 6 K X 32 ED O PA G E M O D E CM O S DYNAM IC R A M P R E LIM IN A R Y HIGH PERFORMANCE 30 35 40 45 50 Max. RAS Access Time, tRAC 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tCAA)

Schott B3

Abstract: CS61535-IL1
Contextual Info: Semiconductor Corporation CS61535A Rev H Process Change Notification D ate: M ay 23, 1993 R ev H o f the C S 6 1535 A is a three-layer revision o f the m ask set that m ade two changes: 1 one yield enhancem ent im plem ented by re-routing internal pow er lines, and

Contextual Info: Â M f t f t O © l O M F ^ [M Ä T D ® [}iO 2D2569 256K x 9-BIT HIGH DENSITY DYNAMIC RAM MEMORY MODULE WITH PAGE MODE • Performance Range Parameter 2D2569-08 2D2569-10 Units Acces Time from RAS tRAc 80 100 ns Access Time from CAS (tcAc) 40 50 ns

400284

Abstract: 3104d 32R2100RU IW671
Contextual Info: m m M b n s S S I 3 2 R 2 1 O O R /210 1 R 10 Channel Thin Film Read/Write Devices ' A TDK Group/Company Advance Information January 1995 DESCRIPTION FEATURES 5V ±10%, 12V ±10% supply The SSI 32R2100R/2101R are BiCMOS monolithic integrated circuits designed for use with two-terminal