M 3101 Search Results

74S189

Abstract: 82S25 N3101A N74S189 N74S189N N82S25 N82S25N S54S189 S82S25
Contextual Info: BIPOLAR M EM O R Y DIVISION M AY 1982 64-BIT BIPOLAR SCRATCH PAD MEMORY 16x4 82S25 (O.C.), 3101A (O.G.), 54/74S189 (T.S.) DESCRIPTION APPLICATIONS T h is fa m ily o f R e a d /W rite R a n d o m A c c e s s • • • • M e m o rie s is id e a l fo r u se in s c r a tc h p a d a n d

Contextual Info: Series ITS ITS 3101 A M and ITS 4101 A (M) ITS 3101 R (M) and ITS 4101 R (M) In-Line Cylindrical Receptacle Assembly with Backshell for Use with Metric Cable Glands ITS 31 01 A 20-27 P Y M25 XXX Reverse Bayonet Coupling Mod Code Option (See Table II) Contact Type

74S189

Abstract: 74818 s189 82S25
Contextual Info: BIPOLAR M E M O R Y DIVISION M AY 1982 64-BIT BIPOLAR SCRATCH PAD MEMORY 16x4 82S25 (O.C.), 3101A (O.C.), 54/74S189 (T.S.) ABSOLUTE MAXIMUM RATINGS RATIN G PARAMETER1 Vcc S u p p ly vo ltage V in Input voltage +7 Vdc + 5 .5 Vdc Vdc O u tp u t vo ltage V oh

jcnr

Contextual Info: Han High Density Quintax HARTING § % \ Han® Quintax contacts Part number Male insert M Female insert (F) Identification Drawing Dimensions in mm 29,3 "ip j'cnr 09 14 002 3001 m 09 14 002 3101 2 9.3 Contact arrangement V ie w f r o m te rm in a tio n s id e

82S25

Abstract: N74S189N N3101A N74S189 N82S25 N82S25N S54S189 S82S25
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 64-BIT BIPOLAR SCRATCH PAD MEMORY 16x4 82S25 (O.C.), 3101A (O.G.), 54/74S189 (T.S.) DESCRIPTION APPLICATIONS T h is fa m ily o f R ead/W rite R andom Access M em ories is ideal fo r use in scra tch pad and high-speed b u ffe r m em ory a pp licatio n s.

Contextual Info: Alle Hechle Vorbehalten/ A ÁII rights rise m i 4 U.6 U lì HarfDDD module 09 U 017 3101 10A 160V 2 ,5kV 3 ^ 250V O vJ £=3 HARTING xxxxxxxxx * 3 - All Diiensions in m Original Size DIN Í t Techn. Character. Dat. Detail. Insp. Stand. Mod. É Dat. Name Nicht tolerierte Halle/Free site M erm es

LCD CMC 116 L01

Abstract: tr/LCD CMC 116 L01
Contextual Info: CHAPTER 1 OUTLINE 1.1 Features O Reduced EMI Electro Magnetic Interference noise compared to the existing ¿¡PD78064 subseries O On-chip high-capacity ROM and RAM Type P ro g ra m M e m o ry P a rt N u m b e r (R O M ) ,u P D 78 064 B 3 2 K b yte s D a ta M e m o ry

N82S185

Abstract: N82S141 93427c 74S200 N82S147 6331-1 6301-1 prom 74S301 DM74S287 PROM intel 3601
Contextual Info: BIPOLAR M E M O R Y M AY 1962 8192-BIT BIPOLAR PROM 2 0 4 8 x 4 82S185(T.S.) DESCRIPTIO N FEATURES T h e 82S 185 is fie ld p ro g ra m m a b le , w h ic h

Contextual Info: 82S25-F.N • 3101 A -F.N • 54/74S89-F.N • 54/74S189-F.N DESCRIPTION APPLICATIONS T his fa m ily o f R ead/W rite R andom A ccess M em ories is ideal fo r use in scra tch pad and h igh-speed b u ffe r m em ory ap p lic a tio n s . • Scratch pad memory

93905

Contextual Info: iP M T N ü M a C K lM tO S - b Ö ti Oroiti de reproduction BERG g .O ItT WET. E1ECTROMCS. ï » nrm n « CONTOUNATNM M M O V - e * Q O V E S r e * M » S D M iO N lo M S I . . j L . .' 1 > D .0 I» 7 K f. kt ftM TIP Proprie*« <le aERG I,- * ] ? BERC ElECTWNCS

74589

Abstract: GL 3101 82S25 74S189 74S89 N82S25 s189 N3101A 54/74S89
Contextual Info: 82S25-F.N • 3101 A -F.N • 54/74S89-F.N • 54/74S189-F.N DESCRIPTION APPLICATIONS This fa m ily o f R ead/W rite R andom Access M em ories is ideal fo r use in scra tch pad and high -spe ed b u ffe r m em ory ap p lica tio n s. • Scratch pad memory • Buffer memory

CA3130S

Abstract: CA3160AT CA3160 12 VOLT 2 AMP regulator ca3160e CA3160AS CA3140 voltage comparator ca3160t
Contextual Info: har ® CA3160, CA3160A S E M I C O N D U C T O R J M • ■ 4M H z, BiM O S O perational A m plifier w ith M O SFET Input/C M O S O utput November 1996 Features Description • M OSFET Input Stage Provides: The CA3160A and CA3160 are integrated circuit operational

Contextual Info: Alle Rechte vorbehalfen/ 2 Ml rights reserrei 3 4 5 6 A = _ - T H - H a r f EE m odule m 09 U 008 3101 16A A00V 6kV 3 c \l ^ \6 0 0 V m _IJ_L LLT 3 HARTING -Q J-x x x x x x x x x = 1 - n z o ^ 35.8 n y \ A ll D iie n sio n s in •■

Contextual Info: T M S 3101 LC, N C - D U A L 100-BIT S T A T I C S H IF T RE G I S T ER T M S 3102 LC. N C - D U A L 80-BIT STA TI C S H I F T R E G I S T E R T M S 3103 LC, N C - D U A L 64-BIT S T A T I C S H IF T R E G I S T E R features • £ DC to 2.5-M H z operation

1HT251

Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313
Contextual Info: WmmËÊÊm W h A iW f W * i r*ïS >*••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A

Contextual Info: SMA Connectors for Semi - Rigid Cable MIL-C-39012/79 M ILITA R Y P AR T NO. M IDW EST P AR T NO. FIGURE A S S E M B LY PRO CEDURE CATEGORY • B3001 . B3002 -3 0 0 7 -3 0 0 8 M39012/79B-3001 M 39012/79B-3002 M 39012/79-3007 M 39012/79-3008 1 1 1 1 SMA SMA

Contextual Info: 5mm LED Panel Mount Indicator 2 & 3 Leaded LEDs, Bi-Color .250” Mounting Hole, Snap In Mounting D ia lî g h t 559 Series BENEFITS S T R A IG H T T E R M IN A L S - T E R M IN A L O P T IO N 1 7 .6 2 [.3 0 0 ] M IN 3001 R/G Red Anode 3101 R/G Red Cathode

180J

Abstract: E80276 TM130 oe3f fandis
Contextual Info: IM TM130RZ/EZ/GZ-24,-2H mm TM130RZ/EZ/G Z-24,-2H • IT(AV • If ( av ) W-Q# yW w i . 130A • Vrrm • V drm t i - ï m M L & m J Î .1200/1600V • •m m . 130A

Contextual Info: M S W A M G IS O M F C Q M Ä Y I M Intel386 SXSA EMBEDDED MICROPROCESSOR • Static lntel3 8 6 TM CPU Core — Low Power Consumption — Operating Power Supply 4.5V to 5.5V— 25 MHz and 33 MHz 4.75V to 5.25V— 40 MHz — Operating Frequency SA-40 = 40 MHz

280 490-440

Abstract: DIN-43650
Contextual Info: E-Serie M12 - DIN 43 650 Bauform C E-Series M12 - DIN 43 650 type C_ Zeichnung Drawing Plan Typ Type Type Polzahl poles pôles Bastail-Nr. Order no. No.-Rèf. Laitungsiange Cable length EM 5312 / GDSN 3101 PUR 034 3 0,3 m 0,6 m

Contextual Info: MITSUBISHI MICROCOMPUTERS M 37702E4EXXXFP PROM VERSION of M 37702M 4EXXXFP DESCRIPTION T h e M 3 7 7 0 2 E 4 E X X X F P is a sin g le -ch ip m icrocom puter d e ­ PIN CONFIGURATION TOP VIEW sign ed with hig h -p erfo rm an ce C M O S silicon g a te tech nolo­

HARRIS CS80C286

Contextual Info: iT ! H A R R 80C286 I S January 1992 High Perform ance M icroprocessor W ith M em ory M anagem ent and Protection Features • C o m p a tib le w it h N M O S 8 0 2 8 6 • W id e R a n g e o f C lo c k R a te s : -D C to 2 5 M H z 8 0 C 2 8 6 - 2 5 -D C to 2 0 M H z ( 8 0 C 2 8 6 - 2 0 )

LA 3101 ic

Abstract: TCM3101 LA 3101
Contextual Info: M 3101 FSK MODEM D 2 8 6 6 , AU G U ST 1 9 8 5 — REVISED FEBRUARY 1 9 8 6 j NO T REC OM M ENDED FOR NEW DESIGN DUAL-IN-LINE PACKAGE TOP VIEWI For n e w design, refer to T C M 3 1 0 5 vdd C CLK £ 2 CDT [ I 3 RXA £ 4 description TRSC 5 The T C M 3 1 0 1 is a single-chip asynchronous

Contextual Info: •■ M m M w u W r* Catalog 1307612 Backplane / High Speed Connectors Revised 7-01 Table of Contents M icro -S trip C o n n ecto rs 1.27 x 2.54 [.050 x .100] C e n te r lin e .3002-3007 Vertical Plugs . 3004-3005