M 208 Search Results

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-4E FLASH MEMORY B lB 8 M M B M 1 M X 8 /5 1 2 K 2 9 L V 8 0 0 T A - 3 1 3 - 1 2 M

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20896-3E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL320TF/BF 70/80/10 • DESCRIPTION The MBM29DL320TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M

FPT-48P-M19

Abstract: FPT-48P-M20 MBM29LV320TE
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20894-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT MBM29LV320TE 80/90/10 MBM29LV320BE80/90/10 • DESCRIPTION The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words

29lv320be

Abstract: 29LV320TE FPT-48P-M19 FPT-48P-M20 MBM29LV320TE 29lv320t
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20894-1E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT MBM29LV320TE 80/90/10 MBM29LV320BE80/90/10 • DESCRIPTION The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words

29LV320TE

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20894-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT MBM29LV320TE 80/90/10 MBM29LV320BE80/90/10 • DESCRIPTION The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20894-4E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT MBM29LV320TE 80/90/10 MBM29LV320BE80/90/10 • DESCRIPTION The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words

SA611

Abstract: 29DL320
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20896-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL320TF/BF 70/80/10 • DESCRIPTION The MBM29DL320TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20894-3E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT MBM29LV320TE 80/90/10 MBM29LV320BE80/90/10 • DESCRIPTION The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words

SOT 86 MARKING CODE E5

Abstract: FPT-48P-M19 FPT-48P-M20 29lv400b F1827
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20862-3E FLASH MEMORY B lB 4 M 512 K X 8/256K x 16 BIT M B M 2 9 L V 4 0 0 T C -7 0 -M 1 2 /M B M 2 9 L V 4 0 0 B C -7 0 -9 0 -1 2

54S474

Abstract: tea 1601 t 54S473 3014 LED 82s141 hf 13005 t1al fuse 13005 TRANSISTOR SEC 13005 transistor 13005 can be replaced with
Contextual Info: 1 MIL-M-38510/208C 31 J a n u a r y 1 9 8 4 iÜKtKbEÜING MIL-M-38510/208B 16 A u g u s t 1 9 8 2 MILITARY SPECIFICATION BIPOLAR, MICROCIRCUITS, DIGITAL, 4096-BIT STHOTTKY P R O G R A M M A B L E R E A D - O N L Y M E M O R Y P RO M , M O N O L I T H I C

G8025HA

Abstract: VG2-2 g8025h G8025M
Contextual Info: M O TA TtO N aa now K -J' Sizc:80mm\K0mmx25mm M.*il Airflow:24~39m3/hr 14-23CFM •T M Weight :208g »fci'i Noi.Nc:22~30dBA M.»| ImpellerM’BT Thermoplastic Black.U I.94-VO iM K FramcrAluminum Alloy ¿iia J' T e rn iin a ls :0 .5 m m •j|*£ Lead Wire:AWO.#22 U I. 1007(0ptional

Contextual Info: M P 1 208/9/10 Microprocessor Compatible Double-Buffered, 12-Bit Digital-to-Analog Converter v m j m F m j m FEATURES Lower Glitch Energy Four Quadrant Multiplication All Parts guaranteed 12-Bit Monotonie Low Feedthrough Error Low Power Consumption TTL/5 V CMOS Compatible

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-4E FLASH MEMORY CMOS 1 6 M 2 M M B M X 8 /1 M X 2 9 L V 1 6 0 T - 8 0 - 9 0 - 1 2 / M B M 16 B IT 2 9 L V 1 6 0 B - 8 0 - 9 0 / - 1 2 • FEA T U R ES • Single 3.0 V read, program and erase Minimizes system level power requirements

sg 403

Abstract: dynamic ram 8 bit 40X32
Contextual Info: PRODUCT INDEX • DRAM MODULES GM M 781000BS G M M 791000BS G M M 781000BNS G M M 781100BNS G M M 781000CNS G M M 781000DNS G M M 791000BNS G M M 791100BNS G M M 791000CNS GM M 791000DNS GM M 784000BS G M M 784000CS GM M 784000DS GM M 794000BS GM M 794000CS

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-3E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each

20890

Abstract: MBM29PL3200BE70 MBM29PL3200BE90 MBM29PL3200TE70 MBM29PL3200TE90
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-3E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-2E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION The MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits

140M

Abstract: 208M
Contextual Info: yMHF324 SERIESz For Wide Color TV `@Ð@i@¼ MHF324-00– MHF324-01– MHF324-02– MHF324-03– è@E@@@³ 11.0 KVD.C 140M¶}20% 11.5 KVD.C 208M¶}20% 12.0 KVD.C 225M¶}20% 8.5 KVD.C 40M¶}20% 5ï4l GI G2 0.0 M¶ 60.0 M¶ 72.8 M¶ 0.0 M¶ G3 115.0 M¶ 147.1 M¶

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-4E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE70/90 MBM29PL3200BE70/90 • DESCRIPTION MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each

308H fet

Abstract: LM308N 308h LM208D ir 308n LM108AD LM308h
Contextual Info: 108/108A 208/208A 308/308A Precision Operational Amplifiers GENERAL DESCRIPTION DESIGN FEATURES The L M 1 0 8 A /L M 1 0 8 , L M 2 0 8 A /L M 2 0 8 and L M 3 0 8 A /L M 3 0 8 are Super Beta operational am plifiers fabricated on single silicon chips using the planar epitaxial process.

208H

Contextual Info: XFMRS, Inc. SPECIFICATION XFMRS P / N FOR APPROVAL Rev: : X F E B 3 2 1 611 —5DD DIMENSION : m / m A 3 .2 ± 0 .2 B 1 . 6 ± 0.2 C D 1.1 ±0.2 A /4 0.5±0.3 F H M N Z Rdc Idc REQUIREMENTS m /m mA /m m /m m /m m /m m /m m /m m /m mA /m m /m m /m m /m

2SJ608

Contextual Info: Ordering number: ENN6995 P-Channel Silicon MOSFET 2SJ608 Isa M yo i Ultrahigh Speed Switching Applications Features Package Dimensions • L ow O N -re sista n e e . unit : m m • U ltrah ig h sp eed sw itc h in g . 2085A • L o w -v o lta g e drive. • M o u n tin g h eig h t 9 .5 m m .

208H

Abstract: HP4284A 6803a
Contextual Info: XFMRS, Inc. SPECIFICATION XFMRS P / N DIMENSION : : FOR APPROVAL X F E B 3 2 1 611 - 6 8 0 - 3 A Rev: m /m A B C D A/1 03.2±O.2 1.6 ± 0.2 m /m 1.1 ± 0 .2 m /m 0 .5 ± 0 .3 m/ nr m /m A m /m A V, m /m m /m A H m /m m /m m /m A K m /m m /m % ELECTRI CAL

XFEB201209-121

Abstract: HP4284A
Contextual Info: XFMRS, Inc. SPECIFICATION XFMRS P / N DIMENSION : : FOR APPROVAL XFEB2012 0 9 -1 2 1 - 0 . 8 Rev: m /m A /1 A 02.O±O.2 m /m B 1.2 ± 0.2 m /m C D 0 .9 ± 0 .2 m /m 0 .5 ± 0 .3 m/Anr m /m V, mA /m m /m A H m /m m /m m /m A K m /m m /m % ELECTRIC AL REQUIREMENTS