LZ 44 NS Search Results

SN74ACT2158

Abstract: SN74ACT2159 SCAD002
Contextual Info: SN74ACT2158, SN74ACT2159 8K x 9 CACHE ADDRESS COMPARATORS/DATA RAMs D3281, MAY 1 990-R E V IS E D JUNE 1990 Fast Address to MATCH Delay 22 ns Max FN PACKAGE TOP VIEW 8K x 10 Internal Static RAM ? On-Chip Address/Data Comparator UJ m rr co <M T- o Ic/D c o l a l o

V53C104D

Contextual Info: V53C104D HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE V53C104D 60 70 80 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns 40 ns Min. Fast Page Mode Cycle Time, (tPC)

V53C8126L

Abstract: V53C8125H V53C8125L
Contextual Info: MOSEL VITELIC V53C8126L ULTRA-HIGH PERFORMANCE, 3.3 VOLT 128K X 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C8126L PRELIMINARY 60 Max. RAS Access Time, tRAC 60 ns Max. Column Address Access Time, (tCAA) 30 ns Min. Fast Page Mode Cycle Time, (tPC)

Contextual Info: MOSEL VITELIC PRELIMINARY V53C16258L HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 40 45 50 60 Max. RAS Access Time, tRAC 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, (tPC)

V53C16258SH

Abstract: V53C16258SHK50 V53C16258SHT50 RC2t
Contextual Info: PRELIMINARY V53C16258SH HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM SELF REFRESH MOSEL VITELIC HIGH PERFORMANCE 50 Max. RAS Access Time, tRAC 50 ns Max. Column Address Access Time, (tCAA) 24 ns Min. Extended Data Out Mode Cycle Time, (tPC)

v53c16258hk

Contextual Info: MOSEL VITELIC PRELIMINARY V53C16258H HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH HIGH PERFORMANCE 25 28 30 35 40 Max. RAS Access Time, tRAC 25 ns 28 ns 30 ns 35 ns 40 ns Max. Column Address Access Time, (tCAA) 13 ns 15 ns

Contextual Info: MOSEL VITELIC PRELIMINARY V53C16256L 3.3 VOLT 256K X 16 FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 40 45 50 60 Max. RAS Access Time, tRAC 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA) 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, (tPC)

V53C664H

Contextual Info: MOSEL VITELIC PRELIMINARY V53C664H 64K X 16 FAST PAGE MODE BYTE WRITE CMOS DYNAMIC RAM HIGH PERFORMANCE 30 35 40 45 50 Max. RAS Access Time, tRAC 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tCAA) 16 ns 18 ns 20 ns 22 ns 24 ns Min. Fast Page Mode Cycle Time, (tPC)

V53C668H

Contextual Info: MOSEL VITELIC PRELIMINARY V53C668H HIGH PERFORMANCE 64K x 16 BIT EDO PAGE MODE BYTE WRITE CMOS DYNAMIC RAM HIGH PERFORMANCE 30 35 40 45 50 Max. RAS Access Time, tRAC 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tCAA) 16 ns 18 ns 20 ns

V53C464-80

Abstract: V53C464-80L V53C464
Contextual Info: 9502310 VIT EL IC CORP 98D 00380 V I T E L I C CO RP Tfl jr “ VITELIC D - T-Vé-23-Z7 DE ^ TSD5310 DODGBflD S | VS3C464 FAMILY HIGH PERFORMANCE, LOW POWER 64 K X 4 B IT FAST PAGE M ODE CMOS D YN A M IC RAM HIGH PERFORMANCE V53C464 70/70L 10/10L 12/12L 80 ns

Q001

Abstract: DHR48 V53C464
Contextual Info: bSE M O SEL-VITELIC T> m b 3 S 3 3 T l Ü G Q lflM b b T l V53C464A FAMILY HIGH PERFORMANCE; LOW POWER 64K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 60/60L 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA)

Contextual Info: HN62448N Series 524288-word X 16-bit/1048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-385B Z Rev. 2.0 Oct. 2 1 ,1996 Description The Hitachi HN62448N is a 8-Mbit CMOS mask-programmable ROM organized either as 524288-word by 16-bits or as 1048576-words by 8-bits. And a high speed access of 100/120 ns is the most suitable to the

Contextual Info: M OSEL VI TEL IC P R E L IM IN A R Y V 5 3C 1 6256H 2 5 6 K x 16 F A S T P A G E M O D E C M O S D Y N A M IC R A M HIGH PERFORMANCE 30 35 40 45 50 60 Max. RAS Access Tim e, tRAC 30 ns 35 ns 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (tCAA)

V53C664H

Abstract: mosel MT
Contextual Info: MOSEL VITELIC V53C664H 6 4 K x 16 B IT F A S T P A G E M O D E B Y TE W RITE CM OS D YN A M IC R A M V53C664H 50 55 60 Max. RAS Access Time, tRAC 50 ns 55 ns 60 ns Max. Column Address Access Time, (tCAA) 26 ns 28 ns 30 ns Min. Fast Page Mode Cycle Time, (tpc)

V53C1668H

Abstract: 1668H-04
Contextual Info: MOSEL VITELIC PRELIMINARY V53C1668H HIGH PERFORMANCE 64K x 16 EDO PAGE MODE DUAL CAS CMOS DYNAMIC RAM HIGH PERFORMANCE 30 35 40 45 50 Max. RAS Access Time, tRAC 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tCAA) 16 ns 18 ns 20 ns 22 ns

Contextual Info: if “ VITELIC V53C404 HIGH PERFORMANCE, LO W POWER 1 M X 4 B IT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA) 35 ns 4 0 ns 50 ns Min. Fast Page Mode Cycle Time, (tpç)

BAV70

Abstract: BAV74 BAV99 BAW56 BZX84-C2V7 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 BZX84-C4V3
Contextual Info: SOT-23 TA B LE 5 - SILICO N PLANAR HIGH SP EED SW ITCHIN G DIODES Devices in th is table are suitable for high-speed sw itch in g and high frequency applications. Ratings and Characteristics at 25 °C ambient temperature. Description Type BAV70 BAV 74 BAV99

Contextual Info: HM621664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-349 A Z Rev. 1.0 Sep. 11,1996 Description The HM621664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 Jim CMOS process and high speed circuit designing

HD74HC366

Abstract: HD74HC366FPEL HD74HC366P PRDP0016AE-B PRSP0016DH-B HD74HC366FP
Contextual Info: HD74HC366 Hex Bus Drivers with 3-state outputs REJ03D0616–0200 (Previous ADE-205-495) Rev.2.00 Jan 31, 2006 Features • • • • • • High Speed Operation: tpd (A to Y) = 9 ns typ (CL = 50 pF) High Output Current: Fanout of 15 LSTTL Loads Wide Operating Voltage: VCC = 2 to 6 V

HD74HC365

Abstract: HD74HC365FPEL HD74HC365P PRDP0016AE-B PRSP0016DH-B
Contextual Info: HD74HC365 Hex Bus Drivers with 3-state outputs REJ03D0615–0200 (Previous ADE-205-494) Rev.2.00 Jan 31, 2006 Features • • • • • • High Speed Operation: tpd (A to Y) = 9 ns typ (CL = 50 pF) High Output Current: Fanout of 15 LSTTL Loads Wide Operating Voltage: VCC = 2 to 6 V

diode Lz 66

Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith

Contextual Info: HM62W1664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-415 A (Z) Preliminary Rev. 0.1 Jul. 18, 1996 Description The HM62W1664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (25/30 ns) with employing 0.8 flm CMOS process and high speed circuit

CRYSTAL oscillator 14.318MHZ

Contextual Info: P A IR C H II-D www.fairchildsemi.com SEMICONDUCTOR RC7100 1 0 0 M H z Mothe rboa rd System Clock Description ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ ¥ The RC7100 is a clock synthesizer for 100MHz operation on Pentium and Pentium II based motherboard systems. It contains 4 copies o f the CPU clock, 8 copies of the PCI

HD74HC368P

Abstract: HD74HC368 HD74HC368FPEL PRDP0016AE-B PRSP0016DH-B
Contextual Info: HD74HC368 Hex Bus Drivers Inverted Data Outputs with 3-state outputs REJ03D0618-0200 (Previous ADE-205-497) Rev.2.00 Mar 30, 2006 Features • High Speed Operation: tpd (A to Y) = 9 ns typ (CL = 50 pF) • High Output Current: Fanout of 15 LSTTL Loads • Wide Operating Voltage: VCC = 2 to 6 V