LY SOT323 Search Results

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT ly 2PC4081 NPN general purpose transistor Product specification Supersedes data of 1997 Jul 04 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor 2PC4081

B1219

Abstract: AN 6752
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT ly 2PD1820A NPN general purpose transistor Product specification Supersedes data of 1997 May 22 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification 2PD1820A NPN general purpose transistor

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT ly PMST5088; PMST5089 NPN general purpose transistors Product specification Supersedes data of 1997 May 22 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T ly PMST6428; PMST6429 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 12 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors

marking code 4D

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T ly BC859W; BC860W PNP general purpose transistors Product specification Supersedes data of 1997 Sep 03 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification BC859W; BC860W PNP general purpose transistors

Contextual Info: MOTOROLA Order this document by BAT54WT1/D SEMICONDUCTOR TECHNICAL DATA S ch o ttky B arrier Diode B AT54W T1 T hese S cho ttky b a rrie r diodes are d e sig n e d for high spe ed sw itch ing applications, c irc u it p ro te ctio n , and v o lta g e cla m p in g . E xtre m e ly lo w fo rw a rd v o lta g e red uce s

T617

Contextual Info: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZU M T717 ISSUE 1 - SEPTEMBER 1998 FE A TU R E S * 500m W POWER DISSIPATION * lc CONTI.5A * * 3 A P eak P u ls e C u rre n t E x c e lle n t H pE C h a ra c te ris tic s U p T o 3 A (p u ls e d )

t718

Abstract: t618
Contextual Info: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ISSU E 1 - SEPTEM BER 1998 ZUMT718 - FEATU RES 500mW POWER D ISSIPA TIO N * lc CONT 1A * * * * 3 A Peak Pu lse C u rren t Exce lle n t H FE C h a ra cte ristics U p T o 3 A (p u lsed )

Contextual Info: SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSU E 1 - DECEMBER 1998_ FEATU RES * A v a la n c h e m ode operation * 50 A Peak a v a la n ch e current * Lo w in d u ctan ce p a cka g in g A P P L IC A T IO N S * La se r LE D d rive rs

Contextual Info: SOT323 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 1 - DECEMBER 1998 P A R T M A R K IN G D E T A IL - T 2 0 S»ÜT3tëS ABSOLUTE M AXIM UM RATINGS. PARAMETER SYM BOL VALUE U N IT 35 V VcEO 30 V V ebo 4.5 V 50 mA 330 mW -55 to +150 °C C ollecto r-B ase V oltag e

Contextual Info: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 IS S U E 1 - S E P T E M B E R FEATU RES 500mW POWER DISSIPATION * * * * lc CO N T 1A 2 A Peak P u lse C u rren t E x c e lle n t H FE C h a ra c te ristic s U p T o 2 A (p u lsed )

Contextual Info: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT618 ISSUE 1 - SEPTEMBER 1998_ F E A TU R E S * 500m W POWER DISSIPATION * lc C O N T I.2 5 A * 3 A P eak P u ls e C u rre n t * E x c e lle n t H FE C h a ra c te ris tic s U p to 3 A (p u ls e d )

ZUMT617

Contextual Info: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT617 ISSUE 1 - SEPTEMBER 1998 FE A TU R E S * 500m W POWER DISSIPATION * lc C O N T I.5 A * * 5 A P eak P u ls e C u rre n t E x c e lle n t H FE C h a ra c te ris tic s U p T o 5 A (p u ls e d )

msp430 TSS721

Abstract: PCI2040 12v class d amplifier 8500 w mono PCI2040GGU PCI2040PGE SN74ACT8990 TLFD500 TLV320AD11A TLV320AD12A TMS320C6000
Contextual Info: T H E JULY/AUGUST 1999 W O R L D L E A D E R I N D S P A N D A N A L O G Showcase ISSUE 3 Inside PCI PCI bus bridge to DSPs 2 DSL CODEC Codecs for Digital Subscriber Line 3 IEEE 1394 1394a link layer controller 4 HMC Local/remote temperature monitor, fan controller

M 4 3171 opto

Abstract: 9571 gh opto 3171 MBR6545 3171 opto SOT223 6 pin
Contextual Info: MOTOROLA MBR6535 MBR6545 SEMICONDUCTOR TECHNICAL DATA MBR6545 is a Motorola Preferred Device Switchmode Power Rectifiers . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.

P381-A

Contextual Info: Who% H E W L E T T mirÆ P A C K A R D S u r f a c e M o u n t P IN D i o d e s in SO T-323 S C - 7 0 Technical Data H SM P-381A S eries H SM P-386A S eries H SM P-389A S eries Features Package Lead Code D escrip tion/A p p lications * D i o d e s O p t i m i z e d for:

IrL 1540 N

Abstract: IrL 1520 N IrL 1540 g irl 1520 AN-1784 U 1560 SMA428A AN1784
Contextual Info: AN1784 APPLICATION NOTE AN LNA OPTIMIZED AT 1575 MHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for GPS Application f = 1575 MHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA 1.45 dB Gain 18 dB RLin 6.7 dB Noise Figure

SMA428A

Abstract: AN-1619
Contextual Info: AN1619 APPLICATION NOTE AN LNA OPTIMIZED FOR INPUT/OUTPUT RETURN LOSS AT 1.85GHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for DCS Application f = 1.85 GHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA Noise Figure 1.55

an1721

Abstract: SMA428A SOT323-6 gp 940
Contextual Info: AN1721 APPLICATION NOTE AN LNA OPTIMIZED AT 900 MHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for GSM Application f = 900 MHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA Noise Figure 1.4 dB Gain 25 dB RLin 8.5 dB RLout

BL 350-700

Abstract: KTA2014 KTC4075
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTC4075 SOT-323 TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER z z z z 3. COLLECTOR Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

LG 2SC4116

Abstract: sot-323 Marking LG 2sc4116 2SA1586 marking LG SOT323
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4116 TRANSISTOR NPN FEATURES z High voltage and high current z Excellent hFE linearity z High hFE z Low noise z Complementary to 2SA1586 1. BASE 2. EMITTER

sot-323 Marking LG

Abstract: LG 2SC4116 ly SOT-323 2SC4116
Contextual Info: 2SC4116 SOT-323 Transistor NPN SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features — High voltage and high current Excellent hFE linearity High hFE Low noise Complementary to 2SA1586 — — — — Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4116 TRANSISTOR NPN FEATURES z High voltage and high current z Excellent hFE linearity z High hFE z Low noise z Complementary to 2SA1586 1. BASE 2. EMITTER

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jun 19 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistors PMSTA42; PMSTA43 FEATURES PINNING • High current max. 500 mA