LX501 Search Results

SSL-LX50133YD

Contextual Info: UNCONTROLLED DOCUMENT REV, A B si 5.70 [0 0 .2 2 4 ] PART NUMBER REV. SSL-LX50133YD B E.C.N. NUMBER AND REVISION COMMENTS 6.27 .96 5.24.01 E.C.N. #10BRDR. & REDRAWN IN 3D. 04.90 [00.193] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘ C PARAMETER PEAK WAVELENGTH

SSL-LX50133SRD

Contextual Info: UNCONTROLLED DOCUMENT REV, A si 5.70 [0 0 .2 2 4 ] 0 4 .9 0 PART NUMBER REV. SSL-LX50133SRD A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & 5 .2 4 .0 1 [ 0 0 .1 9 3 ] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 25‘ C PARAMETER MIN PEAK WAVELENGTH REVERSE VOLTAGE

LED tape

Contextual Info: Discrete LEDs ~ Dome Lens SSL-LX50133 Series T-5mm Extra Tall FEATURES / OPTIONS ►State-of-the-Art, High Brightness Chip Technology ►Choice of Colors and Lens Finishes ►Lead Frame / Lens Casting Reliability ►Easy-to-Solder Leads, Tin Finish ►Available Bulk or on Tape and Reel

D410

Abstract: SSL-LX50133YD-TR
Contextual Info: UNCONTROLLED DOCUMENT REV, 0 5 .7D [0 .2 2 4 ] 0 4 .9 0 PART NUMBER REV. SSL-LX50133YD-TR B E.C.N. NUMBER AND REVISION COMMENTS DATE [0.1-93] A E.C.N. #10BRDR. & B E.C.N. # 1 1 1 4 8 . REDRAWN. 6 .2 7 .9 6 0 2 .0 5 .0 7 ELECTRO-OPTICAL CHARACTERISTICS TA =25*C

SSL-LX50133GD

Contextual Info: UNCONTROLLED DOCUMENT si 5.70 [00.224] 0 4 .9 0 REV, A B C [ 0 0 .1 9 3 ] PART NUMBER REV. SSL-LX5013 3 G D c E.C.N. E.C.N. E.C.N. E.C.N. NUMBER AND REVISION COMMENTS #10214. #10BRDR. & REDRAWN IN 3D. #11148 ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 25‘ C

Contextual Info: dome lens leds LUUEX DISCRETE LEDS T-5mm Extra Tall SSL-LX50133 Series 05.70 [ 00 .2 2 4 ] Lumex Part Number 04.90 [ 00 .193 ] Dice Material FEATURES/OPTIONS APPLICATIONS / USES • State-of-the-Art, High Brightness Chip Technology • Choice of Colors and Lens

LX501

Contextual Info: polyfet rf devices LX501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

SSL-LX50133USBD

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SSL-LX50133USBD CAUTION: STATIC SENSITIVE DEVICE FOLLOW PROPER E.S.D. HANDLING PROCEDURES WHEN WORKING WITH THIS PART. Si 5 .7 0 [ 0 0 .2 2 4 ] REV. 0 4 .9 0 E0O .1 9 3 ] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C PARAMETER

Contextual Info: UNCONTROLLED DOCUMENT REV, A si 5.70 [0 0 .2 2 4 ] PART NUMBER REV. SSL-LX50133GC A E.C.N. NUMBER AND REVISION COMMENTS 0 1 .2 5 .0 7 04 .9 0 [0 0 .1 9 3 ] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 25‘ C PARAMETER MIN PEAK WAVELENGTH REVERSE VOLTAGE 2.2

Contextual Info: polyfet rf devices LX501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

LX501

Abstract: LDMOS
Contextual Info: polyfet rf devices LX501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

SSL-LX50133SRD

Contextual Info: UNCONTROLLED DOCUMENT REV, A si 5.70 [00.224] REV. SSL-LX50133SRD A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. # 1 1 1 4 9 DATE 11.08.06 04.90 [00.193] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C lf=20mA PARAMETER MIN TYP MAX UNITS PEAK WAVELENGTH 660 rim

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSL-LX50133XX S S L — LX50133x x 0 5 ,7 0 [0 0 ,2 2 4 ] 0 4 ,9 0 [0 0 ,1 9 3 ] + 13,80 [0,543] 1,00 [0,039] MAX, J _L[ J 27,00 [1,063] ANDDE 1,30 [0,051] y 2,00 [0,079] 0,50 [0,020] SQR. 2 PLS. I— 2,54 [0,100] •UNLESS OTHERWISE SPECIFIED TOLERANCES PER DECIMAL PRECISION ARE: X =± 1 (±0.039), X.X=±0.5 (±0.020), X.XX=±0.25 (±0.010), X.XXX=±0.127 (±0.005).

SSL-LX50133SYD

Contextual Info: UNCONTROLLED DOCUMENT si 5.70 [0 0 .2 2 4 ] 0 4 .9 0 PART NUMBER REV. S S L — LX50133SYD [ 0 0 .1 9 3 ] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 25‘ C PARAMETER MIN PEAK WAVELENGTH 12.50 [ 0.4 9 2 ] 1.30 [ 0.051] [ 0 .0 3 9 ] M AX. TEST COND rim Z .1

SSL-LX50133USBD

Contextual Info: UNCONTROLLED DOCUMENT CAUTION: STATIC SENSITIVE DEVICE FOLLOW PROPER E.S.D. HANDLING PROCEDURES WHEN WORKING WITH THIS PART. Si 5.70 [0 0 .2 2 4 ] REV, A 0 4 .9 0 PART NUMBER REV. SSL-LX50133USBD A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11149 E0O .1 9 3 ]

Contextual Info: UNCONTROLLED DOCUMENT REV, A si 5.70 [0 0 .2 2 4 ] REV. SSL-LX50133SRC A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11 1 4 9 . DATE D 1.2 5.07 04.90 [00.193] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C lf=20mA PARAMETER MIN MAX UNITS TYP PEAK WAVELENGTH 660

SRC31

Contextual Info: UNCONTROLLED DOCUMENT SCiO.50 PART NUMBER REV. SSI—L X H 9 1S R C 3 1 5 7 4 PRELIMINARY IN P / N DIR 07 .50 [0 0 .2 9 5 ] 04.90 [0 0 .1 9 3 ] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 5 T PARAMETER MIN 660 1.7 PEAK WAVELENGTH FORWARD VOLTAGE '^ 'R | V E R S E VOLTAGE

ILX501

Abstract: sony linear ccd sony CCD LINEAR IMAGE SENSOR ccd Linear Sensor ILX5
Contextual Info: LX501 SONY, 5000-pixel CCD Linear Sensor B/W Description The LX501 is a reduction type CCD linear sensor developed fo r high resolution facsimiles and copiers. This sensor reads A3 size documents at a density o f 400 DPI (Dot Per Inch). A built-in tim ing generator and clockdrivers ensure direct drive at 5V logic fo r easy

Contextual Info: PART NUMBER REV. SSL—LX50133S0D A UNCONTROLLED DOCUMENT REV, A si 5.70 [00.224] 04 .9 0 E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #111 49 [0 0 .1 9 3 ] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘C PARAMETER MIN PEAK WAVELENGTH REVERSE VOLTAGE 12.50 [0 .4 9 2 ]

LX501

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SSL—LX501 33ID REV, A B si 5.70 [00.224] 0 4 .9 0 DATE 6.27.96 5.24.01 [ 0 0 .1 9 3 ] PARAMETER MIN PEAK WAVELENGTH REVERSE VOLTAGE Z .1 VIEWING ANGLE 1.30 [0.051] lf= 2 0 m A MAX UNITS Z .5 Vf 40 Vr mcd 60 2x theta EMITTED COLOR:

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

rf push pull mosfet power amplifier

Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Contextual Info: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30

LX501

Contextual Info: UNCONTROLLED DOCUMENT REV, A B si 5.70 [0 0 .2 2 4 ] 0 4. 9 0 [ 0 0 .1 9 3 ] C PART NUMBER REV. SSL—LX501 33ID c E.C.N. NUMBER AND REVISION COMMENTS PARAMETER PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE 1.30 [0.051] 1 .0 0 [ 0 . 0 3 9 ] 6.27 .96 5.24.01

SSL-LX50133SYD

Contextual Info: UNCONTROLLED DOCUMENT REV, A si 5.70 [00.224] 0 4 .9 0 PART NUMBER REV. SSL—LX50133SYD A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11149 [ 0 0 .1 9 3 ] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 25‘ C PARAMETER MIN VIEWING ANGLE 1.0 0 [ 0 .0 3 9 ] M AX.