LUA* MARKING Search Results

AT513

Abstract: AT4149 AT4156 pc 187 AT406
Contextual Info: rîTTTTl SERIES P TOGGLES & STANDARD SIZE/1-2 POÜË TYPICAL SWITCH ORDERING EXAMPLES P 20 11 12 13 21 22 23 POLES SPST SPDT SPDT DPST DPDT DPDT 12 & C IRCUITS ON NONE NONE ON ON OFF ON NONE ON NONE ON OFF TERMINALS NO CODE Solder Lua P Straiaht PC Z .187" Quick

u18 sensor hall

Abstract: hall sensor u18 marking eua EUA SMD MARKING PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 u18 hall to-92 hall sensor J-STD-020A US1881 B102
Contextual Info: Features and Benefits n n n n n Chopper stabilized amplifier stage Optimized for BDC motor applications New miniature package / thin, high reliability package Operation down to 3.5V CMOS for optimum stability, quality and cost Applications n n n n n n Solid state switch

Contextual Info: TC4SU69F TOSHIBA C MOS DIGITAL INTEGRATED C IR C U IT SILICO N M O NOLITHIC INVERTER GATE Unit in ran The TC4SU69F is a single Inverter. + 0.2 1.6 - 0 .1 Therefore, this Is suitable for applications of CR oscillator □ 1.9 ± 0 .2 0.95 addition to inverters.

Contextual Info: TC4SU69F TO SHIBA C MOS DIGITAL INTEGRATED C IR C U IT SILICON M O NO LITHIC INVERTER GATE Unit in mm The TC4SU69F is a single inverter. Therefore, this is suitable for applications of CR oscillator circuits, crystal oscillator circuits and linear amplifiers in

Contextual Info: TC4S11F T O SHIBA C MOS DIGITAL INTEGRATED C IR C U IT SILICO N M O NO LITHIC 2 INPUT NAND GATE Unit in mm The TC4S11F is 2-input positive logic NAND gates. Gate output with inverter buffer improves the input-output ch aracteristics and if the load capacitance increases, it can stop any changes

2N6137

Abstract: 2N6138 2N6116 J1026 2N6117 2N6118 "Programmable Unijunction Transistor" 2N6118 JAN JAN 2N6137 2N6116 JANTX
Contextual Info: INCH-PÙUNDI MIL-S-19500/493A ER 30 MARCH 1990 SUPERSEDING- MIL-S-19500/493(EL) 22 January 1974 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, PNPN, THYRISTOR, SILICON, (PROGRAMMABLE UNIJUNCTION TRANSISTOR), TYPES: 2N6116, 2N6117, 2N6118, 2N6137, 2N6138, JAN, JANTX, AND JANTXV

Contextual Info: FJ596S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA SI N-CHANNEL JUNCTION FEl CAPACITOR MICROPHONE APPLICATIONS Package; SOT-23 * Especially Suited For Use In Audio telephone Capacitor Microphones * Excellent Voltage Characteristic * Excellent Transient Characteristic

Contextual Info: m m m Chataworth, CA m Micmsemi UF4001GP THRU UF4007GP Prog ress P ow ered b y Technology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 1 Amp Glass Passivated Ultra Fast Recovery Rectifier 50 to 1000 Volts Features • •

Contextual Info: • m m Chattworth, CA m M icm sem i Progress Powered by Technology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • • 2 Amp Silicon Rectifier 50 to 1000 Volts Low Cost Low Leakage Low Forward Voltage Drop

1N660

Abstract: IN3595 1N3070 1N659 1N661
Contextual Info: B K C INTERNA TIO NAL 03E D | 117T1fi3 ODODaV'i T T - o 3 -¿><} GENERAL PURPOSE DIODES 1N659 1N660 1N661 ABSOLUTE MAXIMUM RATINGS • VF • Tm 1.0 V @ 6.0 mA 300 ns Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature

k1v10

Contextual Info: SIDAC: K1V10/K1V11/K1V12 Absolute M axim um Ratings a SÛT? a Item k m # 4 C ond itions S ym bol » Jp-fô « Ratings Unit U tfM M T stg - 40 ~ 125 °C 'o'B$ Tj 125 °c V drm 90 V T/= 112°C, 50Hz sine wave =180° 1 A Tj = 25°C, 50Hz sine wave ( 6 = 180°)

k1v4

Abstract: k1v16 SIDAC K1V k1v14 K1V6
Contextual Info: SIDAC: K1V14/K1V16 A b s o lu te M a x im u m R a tin g s a Storage Temperature T s tg - 40 ~ 125 °C Tj 125 °c drm 115 V V ^ IEsit RMS On-state Current t yWtfi Surge On-state Current j^y\/7s it Repetitive Peak On-state Current Critical Rate of Rise of On-state Current

948 LG DIODE

Contextual Info: 2SD1472 Silicon NPN Epitaxial, Darlington HITACHI Application Low frequency power amplifier Outline UPAK 2 O 1 o1. 2. 3. 4. 948 Base Collector Emitter Collector Flange C — W v- 2kn (Typ) -VvV 0.5 kn (Typ) 2SD1472 Absolute Maximum Ratings (Ta = 25°C) Item

Contextual Info: • ■ ■ Châttworth, C A m M ic m s e m i Progress Powered by Technology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • • • For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place

TC4811F

Contextual Info: T O S H IB A C M O S D IG IT A L IN T E G R A T E D C IR C U IT I I " S IL IC O N M O N O L IT H IC • W 2 INPUT NAND GATE 2.8 - 0 . 3 -rO.2 1. 6 - 0.1 3 DC Supply Voltage - e SYMBOL RATING VDD VSS-0.5-VSS+20 V V VIN Vss-0-5-Vd d +O.5 Output Voltage VOUT

H1227

Contextual Info: r ' B a umH ︽川V p L U A H V T l J E R P E L a A R H U M w G H T R DATE CAP. ITEM CODE CAP * ￨ F ECQE121020FZI 0.001 (102) H121220FZI0.0012(122) H121520FZI0.0015(152) H121820FZI0.0018(182) H 122220 FZ 1 0.0022 (222) H122720 FZ 1 0.0027 (272) H123320 FZ 1 0.0033 (332)

"Solid State Scientific"

Abstract: DoD-STD-100 LAVT 4042B
Contextual Info: r This Material Copyrighted By Its Respective Manufacturer _i 1. _ SCOPE 1.1 Scope. T h is drawing d e sc rib e s the requirem ents fo r m o n o lithic s i l i c o n , CMOS, Quad D Latch

Contextual Info: s M T BH BT g » > 8 M'^ÉESSïliB V'5 1 Dry Circuit Sw itches i » V C N % T < V . Designed for PC Board Applications 1. Terminal pitches are all in inch size multiples of 2.54 mm . S T t 0'y ^ « ^ T Y > f L-y-'rX(2.54m m )T'r„

IRC830

Abstract: AL 1450 DV
Contextual Info: P D -9.455D International i«R Rectifier IRC830 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 5 0 0 V R DS on = 1 -5 ^ l D = 4 .5 A

Contextual Info: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED REV SH EET REV SH EET REV STATUS OF SH EETS REV SH EET PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AM SC N/A 1 2 4

2N3904 Transistors

Abstract: 772G lingsen 2N3904 W83772G LUA* MARKING winbond io 772W
Contextual Info: W83772G Winbond H/W Monitoring IC Date: 05/22/2006 Revision: 1.0 W83772G W83772G Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB n.a. 07/26/05 0.1 NA 2 08/10/05 0.2 For Winbond internal use only 3 08/25/05 0.31 For Winbond internal use only

Contextual Info: W83772G Nuvoton H/W Monitoring IC Date: 05/22/2006 Revision: 1.0 W83772G W83772G Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB n.a. 07/26/05 0.1 NA 2 08/10/05 0.2 For Nuvoton internal use only 3 08/25/05 0.31 For Nuvoton internal use only

Contextual Info: W83772G Winbond H/W Monitoring IC Date: 04/27/2006 Revision: 1.0 W83772G W83772G Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB n.a. 07/26/05 0.1 NA 2 08/10/05 0.2 For Winbond internal use only 3 08/25/05 0.31 For Winbond internal use only

2N3904 Transistors

Abstract: W83L772G 772W thermal diode
Contextual Info: W83772G Winbond H/W Monitoring IC Date: 05/22/2006 Revision: 1.0 W83772G W83772G Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB n.a. 07/26/05 0.1 NA 2 08/10/05 0.2 For Winbond internal use only 3 08/25/05 0.31 For Winbond internal use only