LTE RFMD MATCHING NETWORK Search Results

RF7321

Abstract: band21 RFMD LTE Band 40 rf732 RF7321PCBA-410 LTE RFMD mems matching network RFMD PA LTE
Contextual Info: RF7321 3V LTE Band 11, 21 Linear PA Module Package Style: Module, 10-Pin, 3mm x 3mm x 0.8mm Features            Fully Compliant to LTE Modulation LTE Bands 11, 21 Best-in-Class Efficiency 47%, +28.5dBm Rel 99 output power High Power Gain : 28dB

Contextual Info: RFVC9751 RFVC9751Low Phase Noise Voltage Controlled Oscillator 1920 MHz to 2000MHz LOW PHASE NOISE VOLTAGE CONTROLLED OSCILLATOR 1920MHz TO 2000MHz Package: MCM, 20-Pin, 6mmx6mm Features  -122dBc/Hz Typical at 100kHz Offset  POUT 0dBm Typical  5.0V Supply

Contextual Info: RFVC9750 RFVC9750Low Phase Noise Voltage Controlled Oscillator 795MHz to 858MHz LOW PHASE NOISE VOLTAGE CONTROLLED OSCILLATOR 795MHz TO 858MHz Package: MCM, 20-Pin, 6mmx6mm Frequency and Power versus Control Voltage  POUT 4dBm Typical  5.25V Supply 

Contextual Info: RFVC9752 RFVC9752Low Phase Noise Voltage Controlled Oscillator 1052MHz to 1086MHz LOW PHASE NOISE VOLTAGE CONTROLLED OSCILLATOR 1052MHz TO 1086MHz Package: MCM, 20-Pin, 6mmx6mm Features  -132dBc/Hz Typical at 100kHz Offset  POUT 0dBm Typical  7.4V Supply

RFMD LTE transceiver

Contextual Info: RFVC9751 RFVC9751Low Phase Noise Voltage Controlled Oscillator 1920 MHz to 2000MHz LOW PHASE NOISE VOLTAGE CONTROLLED OSCILLATOR 1920MHz TO 2000MHz Package: MCM, 20-Pin, 6mmx6mm Features  -122dBc/Hz Typical at 100kHz Offset  POUT 0dBm Typical  5.0V Supply

Contextual Info: RFVC9752 RFVC9752Low Phase Noise Voltage Controlled Oscillator 1052MHz to 1086MHz LOW PHASE NOISE VOLTAGE CONTROLLED OSCILLATOR 1052MHz TO 1086MHz Package: MCM, 20-Pin, 6mmx6mm Features  -132dBc/Hz Typical at 100kHz Offset  POUT 0dBm Typical  7.4V Supply

Contextual Info: RFVC9750 RFVC9750Low Phase Noise Voltage Controlled Oscillator 795MHz to 858MHz LOW PHASE NOISE VOLTAGE CONTROLLED OSCILLATOR 795MHz TO 858MHz Package: MCM, 20-Pin, 6mmx6mm Frequency and Power versus Control Voltage  POUT 4dBm Typical  5.25V Supply 

wifi module

Abstract: RFMD PA LTE wifi amplifier
Contextual Info: RFMD . RF5605/RF5652 5.0V, 2.4 to 2.7GHz High Power Front End Module and Power Amplifier RFMD delivers high-power products specifically developed to address IEEE 802.11b/g/n WiFi customer premise equipment CPE applications. The RF5605 front end module (FEM) has an integrated three-stage linear power amplifier (PA),

Contextual Info: RFVC9753 RFVC9753Low Phase Noise Voltage Controlled Oscillator 1680MHz to 1740MHz LOW PHASE NOISE VOLTAGE CONTROLLED OSCILLATOR 1680MHz TO 1740MHz Package: MCM, 20-Pin, 6mm x 6mm Frequency and Power versus Voltage Control 1820 3.0 1800 -125dBc/Hz Typical at 100 kHz

Contextual Info: RFVC9800 RFVC9800Low Phase Noise Voltage Controlled Oscillator 2090MHz to 2180MHz LOW PHASE NOISE VOLTAGE CONTROLLED OSCILLATOR 2090MHz TO 2180MHz Package: MCM, 8-Pin, 6.1mm x 8.1mm Frequency and Power versus Voltage Control 2240 3.0 2220  POUT 0dBm Typical

4G lte RF Transceiver

Abstract: RF transceiver LTE
Contextual Info: RFVC9753 RFVC9753Low Phase Noise Voltage Controlled Oscillator 1680MHz to 1740MHz LOW PHASE NOISE VOLTAGE CONTROLLED OSCILLATOR 1680MHz TO 1740MHz Package: MCM, 20-Pin, 6mm x 6mm Frequency and Power versus Voltage Control 1820 3.0 1800 POUT 0dBm Typical 

Contextual Info: RFVC9800 RFVC9800Low Phase Noise Voltage Controlled Oscillator 2090MHz to 2180MHz LOW PHASE NOISE VOLTAGE CONTROLLED OSCILLATOR 2090MHz TO 2180MHz Package: MCM, 8-Pin, 6.1mm x 8.1mm Frequency and Power versus Voltage Control 2240 3.0 2220 -118dBc/Hz Typical at 100kHz

DG09

Abstract: 4G LTE PA 3G HSDPA LTE rf front end hsdpa antenna lte antenna matching network 3G HSDPA circuits WP090202 quadrature modulation two front end 3g amplifier
Contextual Info: AN RFMD WHITE PAPER RFMD. ® 3G/4G Multimode Cellular Front End Challenges Part 3: Impact on Power Amplifier Design Kevin Walsh and Jackie Johnson Key Concepts Discussed: • Power amplifier background. • Low Power Mode versus DC-DC converters: impact on battery current.

Contextual Info: RFCR2601 RFCR2601 920MHz to 960MHz Single Junction Drop-In Circulator 1880MHz TO 1920MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 0.75in x 0.75in Features  Typical Insertion Loss Less than 0.2dB  -75dBc IMD Typical  Isolation Greater than 26dB

Circulator

Contextual Info: RFCR2102 RFCR2102 920MHz to 960MHz Single Junction Drop-In Circulator 728MHz TO 756MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 1in x 1 in Features  Typical Insertion Loss Less than 0.2dB  -70dBc IMD Typical  Isolation Greater than 23dB

Circulator

Abstract: LTE RFMD matching network high power bjt 150w
Contextual Info: RFCR2601 RFCR2601 920MHz to 960MHz Single Junction Drop-In Circulator 1880MHz TO 1920MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 0.75in x 0.75in Features  Typical Insertion Loss Less than 0.2dB  -75dBc IMD Typical  Isolation Greater than 26dB

LTE rf front end

Abstract: DG09 4G lte RF Transceiver power amplifier transceiver 4G LTE 3g amplifier gsm circuit diagram project RF7200 lte RF Transceiver DCS1800 RF7202
Contextual Info: AN RFMD WHITE PAPER RFMD. ® 3G/4G Multimode Cellular Front End Challenges Part 2: Architecture Discussion Kevin Walsh and Jackie Johnson Key Concepts Discussed: • Multiple architecture options available to fill different design needs for 3G/4G cellular front ends.

RFG1M20180

Abstract: rfmd envelope tracking bpt06
Contextual Info: RFMD . High-Power GaN Broadband Power Transistors BPT RFMD’s high-power GaN broadband power transistors (BPTs) are optimized for commercial infrastructure, military communications, and general purpose amplifier applications in the 700MHz to 2.2GHz frequency band. This series of BPTs are therefore ideal for constant envelope, pulsed,

schematic diagram of bluetooth technology

Abstract: schematic diagram of bluetooth device
Contextual Info: RFDA2046 Digital Controlled Variable Gain Amplifier 1600MHz to 2800MHz GND GND GND GND NC 26 25 24 23 22 2 20 GND SPI_CLK 3 19 GND PUP 4 18 GND 17 GND 16 RF_OUT 15 GND GND 7 DSA GND 13 6 GND 12 RF_IN GND 11 5 GND 10 GND AMP1 AMP2 VCC_AMP2 14 Cellular, 3G Infrastructure

RFSW1012TR7

Abstract: RFSW1012 SW1012-410 SW1012-411 RFMD PA LTE
Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features 50: or 75: Applications „ Low Insertion Loss: 0.30dB at 1980MHz „ High Isolation: 37dB at 2GHz „ High IP3: >75dBm at 2GHz

RFSW1012TR7

Abstract: RFMD PA LTE DS1303 RFSW1012SQ
Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features  5MHz to 6000MHz Operation  50 or 75 Applications GND 1 9 VDD 2 8 EN  High Isolation: 37dB at 2GHz GND 3 7 CTRL

Contextual Info: RFDA2046 Digital Controlled Variable Gain Amplifier 1800MHz to 2800MHz VCC_SPI GND GND GND GND GND NC 28 27 26 25 24 23 22 The RFDA2046 is a digital controlled variable gain amplifier featuring high linearity over the entire gain control range with noise figure less than 5.2dB in its maximum gain state. The gain

Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features 50 or 75 Applications  Low Insertion Loss: 0.30dB at 1980MHz  High Isolation: 37dB at 2GHz  High IP3: >75dBm at 2GHz

Contextual Info: RFDA2046 Digital Controlled Variable Gain Amplifier 1800MHz to 2800MHz VCC_SPI GND GND GND GND GND NC 28 27 26 25 24 23 22 The RFDA2046 is a digital controlled variable gain amplifier featuring high linearity over the entire gain control range with noise figure less than 5.2dB in its maximum gain state. The gain