LT 5237 Search Results

Nvidia NV1

Abstract: HSP-1 sj 2252 NVIDIA schematics FZJ 131 NVIDIA NVidia 7400 NVIDIA CORPORATION auo 002 schematic diagram cga to vga
Contextual Info: /= T S G S -T H O M S O N ^ 7 # . R a D g ^ O H L K E lT ^ O R O D t g i STG 2000 MULTIMEDIA ACCELERATOR PRELIMINARY INFORMATION DESCRIPTION KEY FEATURES The STG2000 Multimedia Accelerator delivers a complete array of advanced multimedia functions, including real-time photorealistic 3D graphics, full­

Contextual Info: S G S -T H O M S O N STU2071 4B3T U INTERFACE CIRCUIT PRELIMINARY DATA 4B3T TWO-WIRE U INTERFACE CIRCUIT FOR LT AND NT APPLICATION 120 kbaud LINE SYMBOL RATE 120 SYM­ BOLS PER FRAME SCRAMBLER AND DESCRAMBLER AC­ CORDING TO CCITT REC V.29 BARKER CODE (11 SYMBOLS) SYNCHRO­

LT 5247

Abstract: LT 5232 LT 5245 LT 5224 diode 1N diode IN5232 LT 5252 LT 5249 IN5228 IN5230
Contextual Info: Microsemi Corp. / / SANTA ANA, CA f The chote experts SCOTTSDALE, A Z For more information call: 1N5221 thru 1N5281 DO-35 602 941-6300 FEA TU R ES SILICON 500 mW ZENER DIODES • 2.4 TH RU 200 V OLTS • COM PAC T PAC KAGE • C O N S U LT FA C TO R Y FOR VOLTAG ES AB O V E 200 V

Contextual Info: 3D E 3> • 7^537 OOE'îW b ■ ^ 3 » ^ - CT7 S G S-THOMSON S C S - T H O M S O - N id E g lT M M K g S S G S P 3 0 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS R DS on SGSP301 100 V 1.4 Î2 Id 2.0 A HIGH SPEED SWITCHING APPLICATIONS

HJM2273

Abstract: NJM2273
Contextual Info: NJM2273 • « m N J M 2 2 7 3 tt, £ a - •§■, — x -i h n t 6 ^ r tn lt ìs u , t ' T ;'7 | - S W 'C f o 3 x t> x a m ^ m x - t. WllVW,WMI±lÌ 5 ~ I2V, 7 MHz, ? □ 7. b - ?7 5 d B at4.43MHz O T K tÉ S It'T - '^ S W t'fo ■# NJM2273S il • 3 X t > - I ttì*

5252-1F

Abstract: 1N52 LT 5252 1N52231 1N4765 N528
Contextual Info: 1N4765 thru 1N4784 See Page 6-46 - M MOTOROLA 1N5221 thru 1N5272 500 M IL L IW A T T H E R M E TIC A L LY SEALED GLASS SILICO N ZENER DIODES GLASS ZENER DIODES • C o m p le te V o lta g e Range - 2.4 to 110 V o lt s * * • D O -35 Package — S m aller than C o n v e n tio n a l D O -7 Package

LT 5247

Abstract: 5253-1N LT 5247 H LT 5224 diode LT 5245 IN5242 IC 5276 in5250 LT 5249 LT 5252
Contextual Info: Mierosemi Corp. f The diode experts SCOTTSDALE, A Z 1N 5221 thru 1N 5281 DO-35 F o r more inform ation call: 602 941-6300 FEATURES SILICO N • 2.4 TH R U 200 V O LTS 500 mW • C O M PAC T PAC K A G E ZEN ER D IO D E S • C O N S U LT FA C T O R Y FOR V O LTAG ES AB O V E 200 V

Contextual Info: MITSUBISHI <ANALOG ASSP> M5237L 3-T E R M IN A L ADJUSTABLE REGULATOR DESCRIPTION The M 5237L is a semiconductor integrated c ircu it which is designed fo r variable o u tp u t voltage regulator and is low power dissipation type w ith in p u t-o u tp u t voltage difference

PIC16F72 inverter ups

Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
Contextual Info: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read

s-parameter s11 s12 s21 S22 2.5 TO 3MHz

Abstract: SWR NOMOGRAPH S11S22-S12S21 T11T22-T12T21 T11-T22
Contextual Info: RoHS Compliant COAXIAL CONNECTORS 2008 CAT.NO.COAX-007A-E.FEB.2008 COAXIAL CONNECTORS Appendices 1. Unit conversion（122 to 123 Page） ①VSWR conversion ②dBm-W conversion 2. Glossary（124 to 126 Page） 3. Frequency designations（127 Page） 4. Calculation of the VSWR of connectors in cascade connection（128 to 130 Page）

M5237L

Abstract: lt 5237
Contextual Info: MITSUBISHI <Dig./Ana. INTERFACE M 5237L,M L 3-TERM INAL ADJUSTABLE REGULATOR DESCRIPTION The M 5237 is a semiconductor integrated circuit which is designed for variable output voltage regulator and is low power dissipation type with input-output voltage difference

Contextual Info: Æ T SG S-IHO M SO N ^7# [10 IM&i©lEM0©S GS1T70-D540F ISDN DC-DC CONVERTER FRENCH VERSION Type GS1T70-D540F V| Vo lo 5V 90 mA 40 V 10,5 mA 25 to 115 V FEATURES • Wide operating line termination battery voltage ■ Peak input overvoltage withstand: 1kV for

lt 5237

Abstract: lt 5236 LT 5238 TIP-641 T1P646 TIP645
Contextual Info: INSTR Is -COPTO} 6961726 TEXAS INSTR m T| ooat.'m m 62 C 3 6 9 7 6 <OPTO> TIP645, TIP646, TIP647 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed For Complementary Use With TIP640, TIP641, TIP642 • 175 W a t 25°C Case Temperature

KSD 166

Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
Contextual Info: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5

FZJ 141

Abstract: BTW 600 SCR btw30 BTW30
Contextual Info: r Z J SGS-THOMSON BTW 30 * 7 1 R®D g^ I[Lti©inS©K!l D©S FAST SWITCHING SCR FEATURES • HIGH dl/dt AND dV/dt RATINGS ■ tq : < 12ns AND 20ns FOLLOWING V Dr m /V r r m ■ HIGH STABILITY AND RELIABILITY DESCRIPTION The BTW30 Silicon Controlled Rectifier Family

lt 5237

Abstract: 2N5390
Contextual Info: TYPE 2N5390 N-P-N DARLINGTON-CONNECTED PLANAR SILICON POWER TRANSISTOR • Very High Gain — 1000 Min at 5 A • High-Speed Switching — 0.3 ¡j . s Typ ton | 3 h> Z “ 55 p ° ‘ d e v ic e sc h e m a tic o * m e c h a n ic a l d a t a 5 'a b s o l u t e m a x im u m r a t in g s a t 2 5 ° C c a se t e m p e r a t u r e u n le ss o th e r w is e n o te d

DP8343N

Abstract: DP8342/DP8343 DP8342
Contextual Info: DP8343 ga National éLm Semiconductor DP8343 High-Speed 8-Bit Serial Receiver/Decoder General Description Features The DP8343 provides complete decoding of data for high speed serial data communications. In specific, the DP8343 receiver recognizes biphase serial data sent from its com­

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

5Cs transistor

Abstract: 5Cs transistor 5cs 58 D1141 L6560 B1ET2910A L6560A L6560AD L6560D LA-511
Contextual Info: r= 7 L6560 L6560A S G S -T H O M S O N * > J i. liìiaDtglSOilLICTMOIèi POWER FACTOR CORRECTOR ADVANCE DATA • VERY PRECISE ADJUSTABLE INTERNAL OUTPUT OVERVOLTAGE PROTECTION . HYSTERETIC START-UP Istart-up < 0.5mA ■ VERY LOW QUIESCENT CURRENT (< 3.5mA)

MIC710

Abstract: XC6875 MC1741L C4558C SG425 mc7724c NE533V General Instrument data book 741p SN75107
Contextual Info: Master Index and Cross Reference Guide M IL-M -38510 Program and Chip Information Operational Amplifiers Voltage Regulators Interface Circuits Voltage Comparators Consumer Circuits Other Linear Circuits Package Information and Mounting Hardware Application Notes

ericsson 6102

Abstract: Unidux
Contextual Info: Sales Offices Scandinavia and Asia Europe America Ericsson Components AB Isafjordsgatan 16 S-164 81 Kista-Stockholm Sweden Tel: +46 8 757 50 00 Fax: +46 8 757 47 76 e-mail: m-info@eka.ericsson.se www: microe.ericsson.se Ericsson Components Pagoda House Westmead Drive

CH5226

Abstract: ch5279 1N5221 1N5281 CH5221 CH5222 CH5223 CH5224 CH5225 CH5227
Contextual Info: Electrical characteristics at 2 5 °C unless otherwise specified. VOLTAGE REGULATOR PLANAR DIODE CHIPS GENERAL PURPOSE 2.4-200 VOLTS Electrically similar to the JEDEC 1 N 5 2 2 1 - 1N5281 MICROSEMI TYPE NO. Note 1 & 5 NOMINAL ZENER VOLTAGE V2 @ Izr (Note 2)

TS120-600F

Abstract: SCR PNPN TS120 TS120-400F TS120-800F TS120F marking 3bs
Contextual Info: ^ 7 SGS-THOMSON TS1 2 0 F SENSITIVE GATE SCR FEATURES • It RMS = 1 A ■ V drm = 400 V / 600 V / 800 V ■ Ig t < 2 0 0 H.A DESCRIPTION The TS120F high voltage series of Silicon Con­ trolled Rectifiers use a high performance planar diffused PNPN, glass passivated sensitive gate

chn 348

Abstract: CHN 314 chn 317 CHN 852 chn 440
Contextual Info: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention