LT 220 DIODE Search Results

DO250

Contextual Info: LT-3/94 DtfD EVAR EXPONENTIAL VARACTOR SERIES for 1M220 - 1M250 1T220 - 1T250 DO220 - DO250 FREQUENCY-VOLTAGE LINEAR TUNING electronics, The MSI Series 220 EVAR exponential varactor tuning diodes feature a 7;1 minimum capacitance tuning ratio from 0.5 to 10 volts for wide

DO-220

Abstract: D0236 Capacitance Varactor Diode DO220 1H250 1T246 1t234 1X220 D0234 D0250
Contextual Info: r LT-3/94 EVAR EXPONENTIAL VARACTOR for 1M220 - 1H250 1T220 - 1T250 DO220 - D0250 FREQUENCY-VOLTAGE LINEAR TUNING The MSI Series 220 EVAR exponential varactor tuning diodes feature a 7:1 minimum capacitance tuning ratio from 0.5 to 10 volts for wide band tuning applications.

DIODE w2x

Contextual Info: 15A 8 0 V Tjvt1 5 0 V Fully Molded sim ilar* TO-220 FSHS15A08 ttfl* 0 * ^ > $ —fc lté í± Nihon Inter Electronics Corporation Specification yr I Schottky Barrier Diode Application High Frequency Rectification ïK^CÆi'fê' I MAXIMUM RATINGS Ta=25°C: Unless otherwise specified

Capacitance Varactor Diode

Abstract: MSI Electronics 1M250 D0224 1T25 1T220 D0234 D0246 1M220 1M224
Contextual Info: LT-3/94 D vD SD EVAR TM EXPONENTIAL VARACTOR SERIES for electronics FREQUENCY-VOLTAGE LINEAR TUNING 1M220 - 1M250 1T220 - XT250 D0220 - D025Q inc. 100 The MSI Series 220 EVAK exponential varactor tuning diodes feature a 7:1 minimum capacitance tuning ratio from 0.5 to 10 volts for wide

Contextual Info: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,

LT 220 diode

Contextual Info: nixYS ' !. :-u r’ Thyristor Modules Thyristor/Diode Modules MCC 220 MCD 220 ^TRMS ^TAVM = 2 x 400 A = 2 x 250 A V RRM = 800 -1600 V v RSM V RRM v DSM v DRM V V Version 1 Version 1 900 1300 1500 1700 800 1200 1400 1600 MCC 220-08ÌO1 MCC 220-12io1 MCC 220-14io1

Contextual Info: SANSHA ELECTRIC MFG CO 5bE D 7T T 12M 3 DDDDS'ib 02fl • SEMJ - p diode M o n m .e DF £ 1O O A B PRELIMINARY ■ MAX I MUM RATINGS ' _ Unless other* 5se T j —25T2 Syabol Item R a tin g s U n it I D F 100A 8120 R e p e t i t i v e Peak R e v e rs e V o lt a g e

Contextual Info: I n ter n a tio n a l 1N3305 S e m ic o n d u c to r , I n c . thru 50 WATT ZENER DIODES 1N3350 MAXIMUM RATINGS Operating Tem perature: Storage Tem perature: DC Power Dissipation: -65 °C to +175 °C -65 °C to +175 °C 50 Watts at 75 °C Power Derating: 0.5 W /°C above 75 °C

Lpp 97

Abstract: transil 428 54-135
Contextual Info: transient voltage suppressors «TRANSIL» íí diodes de protection «TRANSIL» THOMSON-CSF 'R M @ V r m t»A 2,5 KW G LT G LT G LT G LT / 12 24 47 120 V) m in 12 24 47 120 m ax nom 350 W 1 ms expo. 5 5 5 5 @ V(BR>* (V) U nidirectional typ es / 15 30 60

Contextual Info: Tem ic TZMC. TELEFU N K EN Semiconductors Silicon Epitaxial Planar Z Diodes Features • Very sharp reverse characteristic • L ow reverse current level • A vailable with tighter tolerances • Very high stability • L ow noise Applications Voltage stabilization

LW T67C-S2U1-35

Abstract: T676-P1Q1-1 Q62703-Q6301 LO T676-Q2R2-24 Q62703Q4895 LA T676-Q1R2 Q62703-Q5026 Q62703-Q6349 Q62703Q4976 E675-U1V2-26-1
Contextual Info: LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED SMT-LED Package Type Emissionsfarbe Emission color λdom typ. [nm] Farbe der Lichtaustrittsfläche Color of light emitting area Hyper TOPLED ΦV [mlm] IV [mcd] at IF 2ϕ (typ.) Bestellnummer (50% IV) Ordering code

Contextual Info: D IO T E C D IC E L E C T R O N I C S CORP SflE D DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 S ÔMTID? O O O Ol b â IbS HIDIX Data Sheet No.: FSDP-201-A " T - 0 3 - I S 2 A M P FA ST R E C O V E R Y SILICON DIODES

6at6 tube

Abstract: TUNG-SOL 7B6 6Q7 tube 6AT6 6q7gt
Contextual Info: 6AT6 TUNG-SOL D O U BLE-D IO D E TR IO D E MINIATURE TYPE i -4 MAX UN I POTENT I AL CATHODE r~ 6 .3 VOLTS 8 MAX. T-5-5 m/. HEATER Y' 0 . 3 AMPERE AC OR DC S MAX. W X ANY MOUNTING POSITION GLASS BULB BOTTOM VIEW M I N I A T U R E BUTTON 7 P I N BASE THE 6AT6 IS a COMBINED HIGH-MU VOLTAGE A M P L IFIE R AND DOUBLE-DIODE DETEC­

LYE65F

Abstract: 5630 osram E656-AABB-26-1 Q65110A1852 LYE65F-BBCB-35-1-L E65B-AACA-24-1 Q65110A2352 2800 617 LA E63F-EAFA-24-1 E658-V1AE-1-1
Contextual Info: Light Emitting Diodes | Lumineszenzdioden Package Gehäuse Type Bezeichnung En-ission oolor En-issionsf3rbe *GOfr ty p [n m ]/ Color coordi­ nates x/y k. V | 2ç (ty p ) (£0% Orden ng Code Bes:e nummer [mlm] [mA] n 710 . 1800 1450 Q65110A2763 1120 . 2800

Diode LT 442

Contextual Info: Bulletin 12102 rev.B 07/97 International I R Rectifier SAFElR Series 20ETS.S INPUT RECTIFIER DIODE VF < 1V @ 10A 'fs m = Description/Features The 20ETS.S rectifier SAFElR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation

Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS 1500W SERIES TVS DIODES / 1.5KE CASE 10 1500W .Î »] "t,& Breakdown Voltage TYPE 1.5KE6.8 1.5KE6.8A 1.5KE7.5 1.5KE7.5A 1.5KE8.2 1.5KE8.2A 1.5KE9.1 1.5KE9.1A 1.5KE10 1.5KE10A 1.5KE11 1.5KE11A 1.5KE12 1.5KE12A 1.5KE13 1.5KE13A

DSH122-20

Contextual Info: 3LE D SENTECH LT» aiBTBbt. DGQ0DD3 T SMT T'01,^0 High Temperature Gallium Arsenide Schottky Diodes FEATURES • • • • • High Operating Junction Temperature Low Reverse Current Low Forward Voltage High Surge Low Capacitance DESCRIPTION Schottky diodes are ideally suited for a full wave output rectifier in low voltage switching

IN34A

Abstract: 1N215 1N21 diode 1N207 1N218 1N87 uua 170 1N271 1N200 1N137B
Contextual Info: GENERAL PURPOSE DIODES, C1 CAN minimum Breakdown Voltage ISl Part Number i i i i l i l i Continuous Average Forward Current h |m * ] Maximum Reverse Current 1. tlA T, = 2 5 1C T.= 100 C V* (Volts) 40 20 50 60 0.03 0.01 1N200 1N2Q1 1N202 1N203 1N204 7.5

1N53438

Abstract: 1n53668
Contextual Info: ZENER DIODES, 5 WATTS, PLASTIC PACKAGE Zener JEDEC p A rt Voltage * t * r Zener Test S u ffix AS S M axim um b e tte r Im ped* nee fit tj. tmA Suffix A.8.C M axim um Reverse Current at T ^ Z B ^ C M axim um Knee '.•••.'.'.'.wlr ft • Im pedance fit t »1 OmA Ron & A

BR220-100

Abstract: BR220
Contextual Info: 5bE J> 711002b DOmOfib DTG • PHIN BR220 SERIES T-/I-23 °HILIPS INTERNAT IO NAL SbE D rpf»N DUAL BREAKOVER DIODES The BR220 is a range o f m on olithic diffusion-isolated glass-passivated dual bidirectional breakover diodes in the T 0 -22 0A B outline, available in a + /— 12% tolerance series o f nom inal breakover voltage.

Contextual Info: I . I Bulletin 127091 rev.A 09/97 In te rn a tio n a l i r k . f i 1 2 . s e r i e s i q r Rectifier FAST THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 112 A • F a s t tu rn -o ff th y ris to r ■ F a s t re c o v e ry d io d e

SLC-B 42-PIN

Contextual Info: SEHITRON INDUSTRIES LT D 20E D • a i 3 7 f i a cl 0 0 0 0 0 1 1 POWERZORB ■ SLCB V\\-\^> L20 Series 600W Bipolar Transient Absorption Zener Diodes A range of bipolar protection diodes in a surface mount package. "" p P V t T 600W; 1mf5 eypo suiyc 1W max cunt

Contextual Info: SCHOTTKY BARRIER DIODE C20T06Q C20T06Q-11A 22A/60V GCQ20A06 FCQ20A06 FEATURES o 1SQUARE-PA k I TO-263AB SMD Packaged in 24mm Tape and Reel : C20T06Q O Tabless TO-220: C20T06Q-11A o T0-220AB : GCQ20A06 o T0-220AB Fully Molded Isolation : FCQ20A06 o Dual Diodes - Cathode

Contextual Info: YS Thyristor Modules Thyristor/Diode Modules MCC 312 MCD 312 ^TRMS ^TAVM V RRM VRSM VRRM v DSM ^D R M V V 1300 1500 1700 1900 1200 1400 1600 1800 Type MCC 312-12io1 MCC 312-14io1 MCC 312-16io1 MCC 312-18io1 Test Conditions ^TAVM’ ^FAVM Tc = 85°C; 180°!sine