LSE B6 Search Results

LSE B9

Contextual Info: ÛUALITY SEMICONDUCTOR INC LSE QS3384, Q D • 7m3bô03 OOGlMll 355 QS32384 High Speed CMOS 10-bit Bus Switches QS32384 FEATURES/BENEFITS ■ • • ■ • 5£1 switches connect inputs to outputs Direct bus connection when switches on Zero propagation delay 3384

mc34073

Abstract: MC34114 MPS 3202 cobra 0118 MC340 transistor common anode 7 seg MC340 MOTOROLA oc825 MC34017-2 0F21
Contextual Info: MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN-HK-12 USING MC68HC05F6 A S TONE PU LSE D IA LER WITH MELODY-ON-HOLD Prepared by Derek Tam and Michael Chang Motorola Semiconductors Hong Kong Ltd. INTRODUCTION The MC68HC05F6 is a fully static single chip CMOS Microcomputer. It has 288 bytes of RAM and 32

UDR20

Abstract: 20U15 HD63140 ire5
Contextual Info: H D 6 3 1 4 - U niversal Pulse Processor UPP D escription 24 16-bit u n iv e rsa l re g iste rs (UDR) 16 I/O te rm in a ls (8 in te rn a l re g iste rs for p u lse I/O c o n tro l a re also p ro v id ed )

STATES10

Contextual Info: LSI LOGIC L64245 Versatile FIR Filter P re lim in a ry D escription The L64245 FIR Finite Im p u lse R esponse filte r p ro c e s s o r p e rfo rm s filte rin g in m any d iffe re n t fo rm s fo r a p p lic a tio n s ra n g in g fro m b ro a d c a s tq u a lity vid e o tra n s m is s io n and HDTV to d isk

STATES10

Abstract: 164245 h4 6457 Three-Five 74LS373 L64245 DI9010
Contextual Info: LSI LOGIC L64245 Versatile FIR Filter P re lim in a ry D escription The L64245 FIR Finite Im p u lse R esponse filte r p ro c e s s o r p e rfo rm s filte rin g in m any d iffe re n t fo rm s fo r a p p lic a tio n s ra n g in g fro m b ro a d c a s tq u a lity vid e o tra n s m is s io n and HDTV to d isk

h240

Abstract: t8 3580
Contextual Info: LSI LOGIC L64245 Versatile FIR Filter Prelim inary D escrip tio n T h e L64245 F IR Fin ite Im p u lse R e sp o n s e filte r p ro c e s s o r p e rfo rm s filte rin g in m an y d iffe re n t fo rm s fo r a p p lic a tio n s rangin g from b ro a d c a stq u ality vid e o tra n s m is s io n and H D TV to d isk

SC06140

Abstract: STD2NB60
Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE STD2N B60 V dss R D S (o n ) Id 600 V < 3.6 Q. 2 .6 A . • TYPICAL RDS(on) =3.3 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ STP12NB30 STP12NB30FP N - CHANNEL ENHANCEMENT MODE _ PowerMESH MOSFET PRELIMINARY DATA TYP E V dss RDS(on) Id STP3N B60 STP12N B30FP 300 V 300 V < 0.4 0 Q. < 0.4 0 Q. 12A 6 .5 A . • TYPICAL RDS(on) = 0.34 £2

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V STD2N B60 dss 600 V RDS(on) Id < 3 .6 Q. 2 .6 A . • TYPICAL RDS(on) =3.3 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES

Contextual Info: rZ 7 S G S -T H O M S O N MDiS^OilLiSraOIKlDSi Ä T# S T U 13 N B 60 N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE STU 13N B60 V dss RDS(on Id 600 V < 0 .4 5 Q. 12 .6 A • TYPICAL RDS(on) = 0.4 £1 EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: STB3NB60 N - CHANNEL 600V - 3.3Î2 - 3.3A - D^PAK/I^PAK PowerMESH MOSFET TYPE STB3N B60 • . . . . V dss 600 V R d Id S o ii < 3 .6 Q. 3 .3 A TYPICAL RDS(on) =3.3 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ STP3NB60 STP3NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYP E STP3N B60 STP3N B60FP • . . . . V dss R D S (on) Id 600 V 600 V < 3 .6 Q. < 3.6 Q. 3 .3 A 2 .2 A TYPICAL RDS(on) =3.3 EXTREMELY HIGH dv/dt CAPABILITY

13nb60

Contextual Info: C T SGS-THOMSON Ä 7# RfflDOœiLESraOiDOi S T U 13N B 60 N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE S TU 13N B60 • . . . . . V dss R DS on Id 600 V < 0 .4 5 a 12 .6 A TYP IC A L RDS(on) = 0.4 £2 E X TR E M E LY H IG H dv/dt CAPABILITY

2nb60

Contextual Info: s = 7 SGS-THOMSON ^7# Kl «iLiM(s iO(gS STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE S TD 2N B60 V dss RDS(on) Id 600 V < 3.6 Q 2.6 A • TYPICAL RDS(on) = 3 .3 Q m EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES

6V DC-AC Fluorescent lamp

Abstract: STD4N25 6D120
Contextual Info: = 7 *JM S G S -T H O M S O N M œ @ [IŒ C T ^ ô M S S T D 4 N 25 N - C H A N N E L E N H AN C EM EN T MODE POW ER MOS TR A N S IS TO R S TYPE STD 4N 25 • . . . . . . V dss R DS(on Id 250 V < 1.1 a 4 A T Y P IC A L R D S (o n ) = 0.7 £1 A V A LA N C H E R U G G ED T E C H N O LO G Y

CR1220 holder

Abstract: STM32F2 FTSH-110-01-L-DV RM0033 STM32F207IGH6 STM32F20xxx STM32F20xxx reference manual STM32F217 STM3220G-EVAL WLCSP66
Contextual Info: AN3320 Application note Getting started with STM32F20xxx/21xxx MCU hardware development Introduction This application note is intended for system designers who require a hardware implementation overview of the development board features such as the power supply, the

LSE B3 transformer

Abstract: LSE B3 transformer how to test LSE B3 LSE -B3 LSE B4 transformer LSE B6 transformer LSE B6 LSE transformer LSE B4
Contextual Info: Preliminary Information Standard Product May, 1990 LXT456 Switched 56 Transceiver General Description The LXT456 is an integrated line interface circuit for Switched 56 service, compatible with any combination of 19 to 26 AWG cable. The LXT456 operates at 56 kbps,

Contextual Info: STGW20NB60HD N-CHANNEL 20A - 600V - TO-247 PowerMESH IGBT TYPE V ces VcE sat lc S TG W 20N B60H D 600 V < 2 .8 V 20 A . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) . LOW ON-VOLTAGE DROP (V c e s a t) . LOW GATE CHARGE . HIGH CURRENT CAPABILITY . VERY HIGH FREQUENCY OPERATION

Contextual Info: STGP7NB60HD STGP7NB60HDFP N-CHANNEL 7A - 600V - TO-220/FP PowerMESH IGBT TYPE STG P7NB60HD STG P7N B60H D FP V ces VcE sat lc 600 V 600 V < 2 .8 V < 2 .8 V 7 A 7 A . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) . LOW O N -VO LTA G E DR O P (Vcesat) . . . . .

STM8L051F3

Abstract: STM32L15x STM8L051 IR 519A STM8L i2c STM8L CPU programming manual bj 950 131- 6 023-465 STM32L STM8L I2C Example
Contextual Info: STM8L051F3 Value Line, 8-bit ultralow power MCU, 8-KB Flash, 256-byte data EEPROM, RTC, timers, USART, I2C, SPI, ADC Datasheet  production data Features • Operating conditions – Operating power supply: 1.8 V to 3.6 V Temperature range: 40 °C to 85 °C

Contextual Info: STM8L051F3 Value Line, 8-bit ultralow power MCU, 8-KB Flash, 256-byte data EEPROM, RTC, timers, USART, I2C, SPI, ADC Datasheet −production data Features • Operating conditions – Operating power supply: 1.8 V to 3.6 V Temperature range: −40 °C to 85 °C

LSE B9

Abstract: LSE B6
Contextual Info: IUCROSENI CORP/ ÜIATERTOÜIN 50E » T347Tb3 POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 300V, Planar NPN D O lS im JANTX, JANTX, JANTX, JANTX, & & & & 5R4 • U N I T JANTXV JANTXV JANTXV JANTXV 2N 5664 2N 5665 2N 5666 2N 5667 T -33-07 F EA T U RE S • Meets MIL-S-19500/455

STM8L052

Contextual Info: STM8L052C6 Value Line, 8-bit ultralow power MCU, 32-KB Flash, 256-byte data EEPROM, RTC, LCD, timers, USART, I2C, SPI, ADC Datasheet − production data Features • Operating conditions – Operating power supply: 1.8 V to 3.6 V – Temperature range: -40 °C to 85 °C

STM8L052

Abstract: STM8L052C6 STM32L15x STM8L OSC32IN 49/thermostat tue 3x 102
Contextual Info: STM8L052C6 Value Line, 8-bit ultralow power MCU, 32-KB Flash, 256-byte data EEPROM, RTC, LCD, timers, USART, I2C, SPI, ADC Datasheet − production data Features • Operating conditions – Operating power supply: 1.8 V to 3.6 V – Temperature range: -40 °C to 85 °C