LS12L Search Results

murata 897 Mhz

Abstract: SKY65045-70LF HK160810NJ-T S670 m5 sot89 SOT89 sk45 making S244 SK45 srf transistor GRM39C0G100J050AD
Contextual Info: data sheet SKY65045-70LF: 390–1500 MHz Low Noise Power Amplifier Driver Block Diagram Applications l l l l l l l U  HF television T ETRA radio G  SM, AMPS, PCS, DCS, 2.5G, 3G ISM band transmitters F ixed WCS 8 02.16 WiMAX 3 GPP long term evolution

80021

Abstract: SGC-6386Z
Contextual Info: Preliminary Information SGC-6386Z Product Description Sirenza Microdevices’ SGC-6386Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process

Contextual Info: SD57045-01 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M250 epoxy sealed ORDER CODE SD57045-01

70808

Abstract: 82645 56260 0117 0317 HWL26NPA 104780 107867 lS12l GaAs FET sot89 78045
Contextual Info: HWL26NPA L-Band GaAs POWER FET Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V to 6V Operation Outline Dimensions 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description

74910

Abstract: 177307 39068
Contextual Info:
 L-Band Power GaAs FET
 Description Outline Dimensions
          
       ! "  ##$ %& ' & #&$  $%&% %#%*' Features •
   

36568

Contextual Info:
 L-Band Power GaAs FET
 Description Outline Dimensions
        
         !!" #$ %  &$  !$"' "#$# #!# % Features •
   

Contextual Info: HWL34YRA 1234567849A7BCDEF7 7 Autumn 2002 V1 Outline Dimensions Features • Low Cost GaAs Power FET • Class A or Class AB Operation • 14.5 dB Typical Gain at 2.4GHz • 5V to 10V Operation Description The HWL34YRA is a Power GaAs FET designed for various L-band & S-band applications.

Contextual Info: HWL30YRA 1234567849A7BCDEF7 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • Typical 16.5 dB Gain • 5V to 10V Operation Description The HWL30YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.

Contextual Info: HWC34NC 123456789ABC7DEF7 952 47 9B71 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 8.5 dB Typical Gain at 4 GHz • 5V to 10V Operation 1525.0 9 1392.5 1235.0 1 5 1077.5 10 Description 920.0

SD57045

Abstract: 945 TRANSISTOR 700B M243
Contextual Info: SD57045 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 epoxy sealed DESCRIPTION The SD57045 is a common source N-Channel

Contextual Info: SD57045  RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045 is a common source N-Channel

GRM1555C1H2R2JZ35E

Abstract: GJM1555C1H5R6CB01E GRM1555C1H4R7JZ35E GJM1555C1H120JB01E
Contextual Info: AMPLIFIERS PRELIMINARY DATA SHEET SKY65111-348LF: ISM 600–1100 MHz Band 2 Watt InGaP HBT Power Amplifier Features Block Diagram Optimized for 800–1100 MHz operation ● Output power greater than 33 dBm @915 MHz ● 3.5 V nominal operating voltage ● Integrated analog power control voltage, V

Contextual Info: HWL30NPA L-Band GaAs Power FET Autumn 2002 V1 Features • Low Cost GaAs Power FETs • Class A or Class AB Operation • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description 2 1 3 The HWL30NPA is a Medium Power GaAs FET using

Contextual Info: HWC27NC 123456789ABC7DEF7 952 47 9B71 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 11 dB Typical Gain at 4 GHz • 5V to 10V Operation 650 Source Description 435 1 215 2 3 The HWC27NC is a medium power GaAs FET

Contextual Info: HWL26NPA 1234567849A7BCDEF7 E 7 Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V to 6V Operation Outline Dimensions 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description1

0951 v1.02

Contextual Info: HWL36YRA 1234567849A7BCDEF7 7 Autumn 2002 V1 Outline Dimensions Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Greater than 13 dB Gain • 5V to 10V Operation Description The HWL36YRA is a Power GaAs FET designed for various L-band & S-band applications.

Contextual Info: HWL30YRF 1234567849A7BCDEF7 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • Typical 16.5 dB Gain • 5V to 10V Operation Description The HWL30YRF is a Medium Power GaAs FET designed for various L-band & S-band

Contextual Info: HWL27NC 123456789ABC7DEF7 47 9 B7 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 17 dB Typical Gain at 2.4 GHz • 5V to 10V Operation 650 Source Description 435 1 215 2 3 The HWL27NC is a medium power GaAs FET

Contextual Info: HWL26NPB 1234567849A7BCDEF7 7 Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Outline Dimensions Applications • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description

3904 0346

Contextual Info:
 L-Band Medium Power GaAs MESFET
 Outline Dimensions Description
     
    !  "#  $%  !  &'  %!#   *+( )!!!, ! !  &

0734

Contextual Info:
 L-Band Power GaAs MESFET
 Description Outline Dimensions
    
      !"    # " "$   " #  # !   %& # " '     # !   *+ ,-. /*+

transistor d 945

Abstract: 670 OHM RESISTOR 945 TRANSISTOR Wire wound resistor 5W 700B M243 SD57045
Contextual Info: SD57045 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 epoxy sealed DESCRIPTION The SD57045 is a common source N-Channel enhancement-mode lateral Field-Effect RF power

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

SD57045

Abstract: 670 OHM RESISTOR 945 TRANSISTOR 700B M250 SD57045-01 945 tran
Contextual Info: SD57045-01 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M250 epoxy sealed ORDER CODE SD57045-01