LQ 21.80 Search Results
LQ 21.80 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ISSI PACKAGING INFORMATION LQFP Low Profile Quad Flat Pack Package Package Code: LQ E E1 D D1 N 1 C e L1 L SEATING PLANE A2 A b A1 Low Profile Quad Flat Pack (LQ) Inches Millimeters Min Max Min Max Millimeters Symbol Min Max Ref. Std. No. Leads (N) 100 A |
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PK13197LQ 5M-1982. | |
1190E
Abstract: IPC-SM-782 MS-016 23-12J
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20-pin 28-pin 32-pin 1190E IPC-SM-782 MS-016 23-12J | |
Contextual Info: 57' 0,1,$785 3$1(/ 7+(5020(7(5 ,QVWUXFWLRQ 0DQXDO NEWPORT Electronics, Inc. $GGLWLRQDO SURGXFWV IURP ® NEWPORT Electronics, Inc. &RXQWHUV UHTXHQF\ 0HWHUV 3,' &RQWUROOHUV &ORFN7LPHUV 3ULQWHUV 3URFHVV 0HWHUV 2Q2II &RQWUROOHUV 5HFRUGHUV 5HODWLYH +XPLGLW\ |
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3257QHW QHZSRUW86 3257QHW60 | |
1506 0533
Abstract: AM29LV800B AM29LV800BB-90 AM29LV800BT-90
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Am29LV800B CS39S ACN2016) 1506 0533 AM29LV800BB-90 AM29LV800BT-90 | |
toshiba satellite a300
Abstract: wiring diagram dol motor starter OMRON LY2N 24VDC M1B N SMD TRANSISTOR omron Communication cables pin diagram MY2N 24VDC, IEC255 xs schneider kyosan 726 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS dol starter
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JB301-E3-01 toshiba satellite a300 wiring diagram dol motor starter OMRON LY2N 24VDC M1B N SMD TRANSISTOR omron Communication cables pin diagram MY2N 24VDC, IEC255 xs schneider kyosan 726 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS dol starter | |
MME transistor 401
Abstract: utc 1018 NT 407 F TRANSISTOR 7252 TRANSISTOR Avantek UTC 1054 Scans-00117991 avantek utc 523 D 795 A AVANTEK utc 9329 transistor
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ca-168 MME transistor 401 utc 1018 NT 407 F TRANSISTOR 7252 TRANSISTOR Avantek UTC 1054 Scans-00117991 avantek utc 523 D 795 A AVANTEK utc 9329 transistor | |
p15j
Abstract: p10j TQ144 TQFP 144 PACKAGE LS101 MDIO communication protocol p3mc P11J0
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LS101 LS101 TQ144 0D0117R p15j p10j TQ144 TQFP 144 PACKAGE MDIO communication protocol p3mc P11J0 | |
SMBJ15A
Abstract: LM 5530 BM TVS LQ 21.80 DO214AA SMBJ10 SMBJ10A SMBJ11 SMBJ11A SMBJ12
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10volts SMBJ15A LM 5530 BM TVS LQ 21.80 DO214AA SMBJ10 SMBJ10A SMBJ11 SMBJ11A SMBJ12 | |
Contextual Info: AD VA NC E 2 5 6 K x 1 8 / 1 2 8K x 36 LVTTL, L A T C H E D LATE WRITE SRAM MICRON U TECHNOLOGY, INC. MT59L256L18L MT59L128L36L 4.5Mb LATE WRITE SRAM FEATURES * * * * * * * * * * * * * * * * * Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations |
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MT59L256L18L MT59L128L36L MT59L128L36L 119-bump, MT59L256L18LB-X MT59L128L36LB-X | |
Contextual Info: P6SMBJ SERIES 600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction 600W Peak Pulse Power Dissipation 5.0V – 440V Standoff Voltage Uni- and Bi-Directional Versions Available |
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SMB/DO-214AA, MIL-STD-750, | |
DD 127 D 7mContextual Info: AD VA NC E 2 5 6 K x 1 8 / 1 2 8K x 36 2. 5V I/O, L A T C H E D L A T E W R I T E S R A M MICRON U TECHNOLOGY, INC. MT59L256V18L MT59L128V36L 4.5Mb LATE WRITE SRAM FEATURES * * * * * * * * * * * * * * * * * Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations |
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MT59L256V18L MT59L128V36L MT59L128V36L 119-bump, MT59L256V18LB-X MT59L128V36LB-X DD 127 D 7m | |
SMD EZ 648
Abstract: smd suppressor marking qe transistor DK qe smd cm 8600 c smd smd marking NX PP 3240 EH smd marking ez Diodes smd suppressor marking mx smd marking KD smd marking ky
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TV06B5V0-G TV06B440-G 440Volts SMB/DO-214AA DO-214AA DO-214AA QW-BTV02 SMD EZ 648 smd suppressor marking qe transistor DK qe smd cm 8600 c smd smd marking NX PP 3240 EH smd marking ez Diodes smd suppressor marking mx smd marking KD smd marking ky | |
bu 2506 DFContextual Info: SMD Transient Voltage Suppressor TV06B5V0-G Thru. TV06B441-G Working Peak Reverse voltage: 5.0 ~ 440Volts Power Dissipation: 600 Watts RoHS Device Features SMB/DO-214AA -Ideally for surface mount applications. -Easy pick and place. -Plastic package has Underwriters Lab. |
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TV06B5V0-G TV06B441-G 440Volts SMB/DO-214AA DO-214AA -Terminals004 QW-BTV02 DO-214AA bu 2506 DF | |
bi 370 transistor
Abstract: md 5408 P6SMBJ13a transistor af 178 P6SMBJ12A P6SMBJ10 P6SMBJ10A P6SMBJ11 P6SMBJ11A P6SMBJ12
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SMB/DO-214AA SMB/DO-214AA, MIL-STD-750, bi 370 transistor md 5408 P6SMBJ13a transistor af 178 P6SMBJ12A P6SMBJ10 P6SMBJ10A P6SMBJ11 P6SMBJ11A P6SMBJ12 | |
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SMBJxxA
Abstract: LT 0216 diode KL SN 102 94v0
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DO-214AA 5/50ns SMBJxxA LT 0216 diode KL SN 102 94v0 | |
bu 2506 DFContextual Info: 05407 SMBJ SERIES Only One Name Means ProTek’Tion 600 WATT TVS COMPONENT APPLICATIONS • Power Supply • AC/DC Applications • Telecom DO-214AA PACKAGE FEATURES MECHANICAL CHARACTERISTICS • UL File Recognition #E333727 • Compatible with IEC 61000-4-2 ESD : Level 4 - Air 15kV, Contact 8kV |
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DO-214AA E333727 5/50ns bu 2506 DF | |
KL SN 102 94v-0Contextual Info: 05407 SMBJ SERIES Only One Name Means ProTek’Tion 600 WATT TVS COMPONENT APPLICATIONS • Power Supply • AC/DC Applications • Telecom DO-214AA PACKAGE FEATURES MECHANICAL CHARACTERISTICS • UL File Recognition #E333727 • Compatible with IEC 61000-4-2 ESD : Level 4 - Air 15kV, Contact 8kV |
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DO-214AA E333727 5/50ns KL SN 102 94v-0 | |
RE1201
Abstract: okaya catalog RA-362MS LE334-M XYE104
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H0207E1407-2E RE1201 okaya catalog RA-362MS LE334-M XYE104 | |
Contextual Info: ADVANCE M I IC n D N 25 6 K x 1 8 / 1 2 8K x 36 LVTTL, F L O W - T H R O U G H LATE WRITE SRAM MT59L256L18F MT59L128L36F 4.5Mb LATE WRITE SRAM Dual Clock and Single Clock FEATURES * * * * * * * * * * * * * * * * * Fast cycle tim es 5ns, 6ns and 7ns 256K x 18 or 128K x 36 configurations |
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MT59L256L18F MT59L128L36F | |
Contextual Info: AD VA NC E 25 6 K x 1 8 / 1 2 8K x 36 LVTTL, PIPELINED LATE WRITE SRAM MICRON U TECHNOLOGY, INC. 4.5Mb LATE WRITE SRAM MT59L256L18P MT59L128L36P FEATURES * Fast cycle times 5ns, 6ns and 7ns * 256K x 18 or 128K x 36 configurations * Single +3.3V +0.3V/-0.2V power supply (Vdd) |
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119-bump, JEDE20 18/128K MT59L256L18P | |
Contextual Info: AD VA NC E 25 6 K x 1 8 / 1 2 8K x 36 HSTL, L A T C H E D LATE WRITE SRAM MICRON U TECHNOLOGY, INC. MT59L256H18L MT59L128H36L 4.5Mb LATE WRITE SRAM FEATURES * * * * * * * * * * * * * * * * * * * Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations |
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MT59L256H18L MT59L128H36L 59L256H18L MT59L128H36L 119-bump, | |
Contextual Info: ADVANCE 25 6 K x 1 8 / 1 2 8K x 36 3. 3V V dd , H S T L , P I P E L I N E D C L A Y M O R E S R A M MICRON U TECHNOLOGY, INC. MT57L256H18P MT57L128H36P 4.5Mb C L A Y M O R E SRAM FEATURES Fast cycle tim es: 4.4ns, 5ns, 5.5n s, 6ns and 7ns * 256K x 18 and 128K x 36 con fig u ration s |
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MT57L256H18P MT57L128H36P | |
Contextual Info: ADVANCE 25 6 K x 1 8 / 1 2 8K x 36 2. 5V I/O, P I P E L I N E D L A T E W R I T E S R A M MICRON U TECHNOLOGY, INC. 4.5Mb LATE WRITE SRAM MT59L256V18P MT59L128V36P FEATURES * Fast cycle times 4.5ns, 5ns, 6ns and 7ns * 256K x 18 or 128K x 36 configurations |
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119-bump, 18/128K MT59L256V18P | |
Contextual Info: ADVANCE 25 6 K MICRON 1 — •« X 1 8 / 1 2 8K x 36 HSTL, PIPELINED LATE WRITE SRAM MT59L256H18P MT59L128H36P 4.5Mb LATE WRITE SRAM FEATURES * * * * * * * * * * * * * * * * * * Fast cycle times 4.5ns, 5ns, 6ns and 7ns 256K x 18 or 128K x 36 configurations |
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MT59L256H18P MT59L128H36P MT59L128H36P 119-bump, |