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    Pyle Audio PLPTS2

    Universal Laptop Stand, Adjustable, Mini; Product Range:- Rohs Compliant: Na |Pyle PLPTS2
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    Pyle Audio PLPTS35

    Laptop Stand With Accessory Tray; Product Range:- |Pyle PLPTS35
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    Newark PLPTS35 Bulk 6
    • 1 $29.00
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    Pyle Audio PLPTS26

    Laptop Computer Stand For Dj With Shelf; Accessory Type:Stand; Load Capacity:8Lb; Product Range:- |Pyle PLPTS26
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    Newark PLPTS26 Bulk 10
    • 1 $24.00
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    Pyle Audio PLPTS25

    Laptop Stand |Pyle PLPTS25
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    Newark PLPTS25 Bulk 10
    • 1 $15.00
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    Dataman LP-TSOP-48S

    The Dataman Lp-Tsop-48S Is A Device Specific Adapter For Devices In Tsop48 For Rohs. |Dataman LP-TSOP-48S
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    Newark LP-TSOP-48S Bulk 1
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    LPTS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N4148

    Abstract: 5102ALPRP lpt port 1N4148 SPACE POWER ELECTRONICS INC
    Contextual Info: SPACE ELECTRONICS INC. 16-BIT, 20 KHZ A/D CONVERTER SPACE PRODUCTS +VDIG 1 5102ALPRP 44 +VANLOG DGND AGND -VDIG -VANLOG -VDIG SLEEP RST SLEEP HOLD BP/UP CODE TRK1 SSH/SDL CRS/FIN TRK2 SDATA SCKMOD CLKIN LPTSTATUS XOUT +VANLOG STBY AIN2 CLKIN DGND -VANLOG XOUT


    Original     		16-BIT, 5102ALPRP 16-Bit 00Rev2 1N4148 5102ALPRP lpt port 1N4148 SPACE POWER ELECTRONICS INC PDF

    rsj-300

    Abstract: rsj-300n10
    Contextual Info: Data Sheet 4V Drive Nch MOSFET RSJ300N10  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 (3)  Application


    Original     		RSJ300N10 RSJ300N10 Pw10s, R1120A rsj-300 rsj-300n10 PDF

    Contextual Info: Data Sheet 10V Drive Nch MOSFET R5019ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.


    Original     		R5019ANJ R5019ANJ R1120A PDF

    rcj450

    Abstract: rcj450N20
    Contextual Info: RCJ450N20 Data Sheet 10V Drive Nch MOSFET RCJ450N20  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.


    Original     		RCJ450N20 RCJ450N20 Pw10st R1120A rcj450 PDF

    rcj330

    Abstract: RL76 RCJ330N25
    Contextual Info: RCJ330N25 Data Sheet 10V Drive Nch MOSFET RCJ330N25  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 4.5 13.1 9.0 1.3 1.24 2.54 0.78 2.7 5.08 (1) (2) 0.4 1.2 3.0 1.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage


    Original     		RCJ330N25 R1120A rcj330 RL76 RCJ330N25 PDF

    Contextual Info: 10V Drive Nch MOSFET R6012ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 9.0 7.25 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		R6012ANJ R0039A PDF

    Contextual Info: 10V Drive Nch MOSFET R5016ANJ Dimensions Unit : mm Structure Silicon N-channel MOSFET LPTS 10.1 0.4 0.78 2.7 5.08 (1) Base (Gate) (1) (2) 1.2 3.0 1.0 1.24 2.54 (3) (2) Collector (Drain) (3) Emitter (Source) Applications Switching Each lead has same dimensions


    Original     		R5016ANJ PDF

    Contextual Info: R5021ANJ Nch 500V 21A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		R5021ANJ SC-83) R1120A PDF

    Contextual Info: R6008FNJ Datasheet Nch 600V 8A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		R6008FNJ SC-83) R1120A PDF

    R5021ANJ

    Contextual Info: R5021ANJ R5021ANJ Datasheet Nch 500V 21A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		R5021ANJ SC-83) R1120A R5021ANJ PDF

    Contextual Info: Data Sheet 4V Drive Nch MOSFET RSJ10HN06  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) High power Package 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2


    Original     		RSJ10HN06 R1120A PDF

    LPT 26 pin to 39

    Abstract: 9240LP adc lpt
    Contextual Info: 9240LP 14-Bit, 10 MSPS Monolithic A/D Converter with LPT ASIC BIT 2 BIT 1 OTC NC NC AVDD AVSS NC SENSE Vref REFCOM BIT 3 NC BIAS CAPB CAPT NC CML LPTref 9240LP BIT 10 BIT 11 BIT 12 BIT 13 NC BIT 14 LPTSTATUS LPTBIT DRVDD CLK Memory AVDD NC . DVSS AVSS DVDD


    Original     		9240LP 14-Bit, Signal-to-noise02 10MSPS LPT 26 pin to 39 9240LP adc lpt PDF

    Contextual Info: R5016ANJ Transistors 10V Drive Nch MOSFET R5016ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)


    Original     		R5016ANJ PDF

    lpts

    Contextual Info: RSJ151P10 Datasheet Pch 100V 15A Power MOSFET lOutline VDSS -100V RDS on (Max.) 120mW ID -15A PD 50W lFeatures LPTS (SC-83) (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.


    Original     		RSJ151P10 -100V 120mW SC-83) R1102A lpts PDF

    C458C

    Contextual Info: 10V Drive Nch MOSFET R5011ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original     		R5011ANJ R0039A C458C PDF

    Contextual Info: 10V Drive Nch MOSFET R5009ANJ Dimensions Unit : mm Structure Silicon N-channel MOSFET LPTS 10.1 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 2.54 (1) Base (Gate) (3) (2) Collector (Drain) (3) Emitter (Source) Applications Switching Each lead has same dimensions


    Original     		R5009ANJ PDF

    RSJ151P10

    Contextual Info: RSJ151P10 Pch 100V 15A Power MOSFET Datasheet lOutline VDSS -100V RDS on (Max.) 120mW ID -15A PD 50W lFeatures (2) LPTS (SC-83) (1) (3) lInner circuit (3) 1) Low on-resistance. *1 (1) Gate (2) Source (3) Drain 2) Fast switching speed. 3) Drive circuits can be simple.


    Original     		RSJ151P10 -100V 120mW SC-83) R1120A RSJ151P10 PDF

    Contextual Info: Data Sheet 10V Drive Nch MOSFET RSJ450N04  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High current 3) High power Package 4.5 3.0 1.0 1.24 0.4 0.78 2.7 5.08 (1) (2) 1.2 2.54 (3)


    Original     		RSJ450N04 R1120A PDF

    Contextual Info: R5019ANJ Data Sheet 10V Drive Nch MOSFET R5019ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.


    Original     		R5019ANJ R5019ANJ R1120A PDF

    Contextual Info: R5013ANJ Datasheet Nch 500V 13A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.38W ID 13A PD 100W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original     		R5013ANJ SC-83) R1120A PDF

    RSJ250P

    Abstract: RSJ250P10 rsj250
    Contextual Info: Data Sheet 4V Drive Pch MOSFET RSJ250P10  Structure Silicon P-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 (3)  Application


    Original     		RSJ250P10 RSJ250P10 PW10s, R1120A RSJ250P rsj250 PDF

    Contextual Info: Data Sheet 10V Drive Nch MOSFET R5021ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) garanteed to be ±30V . 4.5 3.0 1.0 1.24


    Original     		R5021ANJ R5021ANJ R1120A PDF

    Contextual Info: Data Sheet 10V Drive Nch MOSFET R5005CNJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.


    Original     		R5005CNJ R5005CNJ R1120A PDF

    Contextual Info: Data Sheet 4V Drive Nch MOSFET RSJ550N10  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High Power Package. 3) 4V drive. 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 (3)


    Original     		RSJ550N10 R1120A PDF