LPTS Search Results
LPTS Price and Stock
YAGEO Corporation PT1206FR-070R22L (PT SERIES)Res, R22, 1%, 0.25W, Thick Film Rohs Compliant: Yes |Yageo PT1206FR-070R22L |
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PT1206FR-070R22L (PT SERIES) | Reel | 5,000 | 5,000 |
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YAGEO Corporation PT1206FR-070R2L (PT SERIES)Resistance:200Mohm; Product Range:Pt Series; Resistor Case/Package:1206 [3216 Metric]; Power Rating:250Mw; Resistance Tolerance:± 1%; Resistor Technology:Thick Film; Temperature Coefficient:± 75Ppm/°C; Product Length:3.1Mm Rohs Compliant: Yes |Yageo PT1206FR-070R2L |
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PT1206FR-070R2L (PT SERIES) | Cut Tape | 4,650 | 1 |
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TE Connectivity MSLPT5252CG4WTR (MSLPT SERIES)Tact Switch, Spst-No, 0.05A, 12Vdc, Smd; Product Range:Mslpt Series; Actuator Orientation:Top Actuated; Switch Mounting:Surface Mount; Actuator Style:Round Button; Actuating Force:260Gf; Contact Rating:50Ma At 12Vdc; Ip Rating:- Rohs Compliant: Yes |Alcoswitch Te Connectivity MSLPT5252CG4WTR |
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MSLPT5252CG4WTR (MSLPT SERIES) | Cut Tape | 3,000 | 1 |
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TE Connectivity MCSLPT4848C4DTR (MCSLPT SERIES)Tact Switch, Spst-No, 0.05A, 12Vdc, Smd; Product Range:Mcslpt Series; Actuator Orientation:Top Actuated; Switch Mounting:Surface Mount; Actuator Style:Round Button; Actuating Force:260Gf; Contact Rating:50Ma At 12Vdc; Ip Rating:- Rohs Compliant: Yes |Alcoswitch Te Connectivity MCSLPT4848C4DTR |
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MCSLPT4848C4DTR (MCSLPT SERIES) | Bulk | 2,415 | 1 |
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Amphenol Industrial Operations LPTC-SF-12S-12-1 (LPT SERIES)Circular Contact, Skt, 14-12Awg, Crimp; Product Range:Lpt Series; Contact Gender:Socket; Contact Termination Type:Crimp; Wire Size Awg Max:12Awg; Wire Size Awg Min:14Awg; Contact Plating:Tin Plated Contacts Rohs Compliant: Yes |Amphenol Industrial LPTC-SF-12S-12-1 |
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LPTC-SF-12S-12-1 (LPT SERIES) | Cut Tape | 2,303 | 1 |
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LPTS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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1N4148
Abstract: 5102ALPRP lpt port 1N4148 SPACE POWER ELECTRONICS INC
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16-BIT, 5102ALPRP 16-Bit 00Rev2 1N4148 5102ALPRP lpt port 1N4148 SPACE POWER ELECTRONICS INC | |
rsj-300
Abstract: rsj-300n10
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RSJ300N10 RSJ300N10 Pw10s, R1120A rsj-300 rsj-300n10 | |
Contextual Info: Data Sheet 10V Drive Nch MOSFET R5019ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. |
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R5019ANJ R5019ANJ R1120A | |
rcj450
Abstract: rcj450N20
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RCJ450N20 RCJ450N20 Pw10st R1120A rcj450 | |
rcj330
Abstract: RL76 RCJ330N25
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RCJ330N25 R1120A rcj330 RL76 RCJ330N25 | |
Contextual Info: 10V Drive Nch MOSFET R6012ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 9.0 7.25 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. |
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R6012ANJ R0039A | |
Contextual Info: 10V Drive Nch MOSFET R5016ANJ Dimensions Unit : mm Structure Silicon N-channel MOSFET LPTS 10.1 0.4 0.78 2.7 5.08 (1) Base (Gate) (1) (2) 1.2 3.0 1.0 1.24 2.54 (3) (2) Collector (Drain) (3) Emitter (Source) Applications Switching Each lead has same dimensions |
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R5016ANJ | |
Contextual Info: R5021ANJ Nch 500V 21A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. |
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R5021ANJ SC-83) R1120A | |
Contextual Info: R6008FNJ Datasheet Nch 600V 8A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. |
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R6008FNJ SC-83) R1120A | |
R5021ANJContextual Info: R5021ANJ R5021ANJ Datasheet Nch 500V 21A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. |
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R5021ANJ SC-83) R1120A R5021ANJ | |
Contextual Info: Data Sheet 4V Drive Nch MOSFET RSJ10HN06 Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) High power Package 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2 |
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RSJ10HN06 R1120A | |
LPT 26 pin to 39
Abstract: 9240LP adc lpt
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9240LP 14-Bit, Signal-to-noise02 10MSPS LPT 26 pin to 39 9240LP adc lpt | |
Contextual Info: R5016ANJ Transistors 10V Drive Nch MOSFET R5016ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) |
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R5016ANJ | |
lptsContextual Info: RSJ151P10 Datasheet Pch 100V 15A Power MOSFET lOutline VDSS -100V RDS on (Max.) 120mW ID -15A PD 50W lFeatures LPTS (SC-83) (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple. |
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RSJ151P10 -100V 120mW SC-83) R1102A lpts | |
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C458CContextual Info: 10V Drive Nch MOSFET R5011ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. |
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R5011ANJ R0039A C458C | |
Contextual Info: 10V Drive Nch MOSFET R5009ANJ Dimensions Unit : mm Structure Silicon N-channel MOSFET LPTS 10.1 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 2.54 (1) Base (Gate) (3) (2) Collector (Drain) (3) Emitter (Source) Applications Switching Each lead has same dimensions |
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R5009ANJ | |
RSJ151P10Contextual Info: RSJ151P10 Pch 100V 15A Power MOSFET Datasheet lOutline VDSS -100V RDS on (Max.) 120mW ID -15A PD 50W lFeatures (2) LPTS (SC-83) (1) (3) lInner circuit (3) 1) Low on-resistance. *1 (1) Gate (2) Source (3) Drain 2) Fast switching speed. 3) Drive circuits can be simple. |
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RSJ151P10 -100V 120mW SC-83) R1120A RSJ151P10 | |
Contextual Info: Data Sheet 10V Drive Nch MOSFET RSJ450N04 Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High current 3) High power Package 4.5 3.0 1.0 1.24 0.4 0.78 2.7 5.08 (1) (2) 1.2 2.54 (3) |
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RSJ450N04 R1120A | |
Contextual Info: R5019ANJ Data Sheet 10V Drive Nch MOSFET R5019ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. |
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R5019ANJ R5019ANJ R1120A | |
Contextual Info: R5013ANJ Datasheet Nch 500V 13A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.38W ID 13A PD 100W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. |
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R5013ANJ SC-83) R1120A | |
RSJ250P
Abstract: RSJ250P10 rsj250
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RSJ250P10 RSJ250P10 PW10s, R1120A RSJ250P rsj250 | |
Contextual Info: Data Sheet 10V Drive Nch MOSFET R5021ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) garanteed to be ±30V . 4.5 3.0 1.0 1.24 |
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R5021ANJ R5021ANJ R1120A | |
Contextual Info: Data Sheet 10V Drive Nch MOSFET R5005CNJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. |
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R5005CNJ R5005CNJ R1120A | |
Contextual Info: Data Sheet 4V Drive Nch MOSFET RSJ550N10 Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High Power Package. 3) 4V drive. 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 (3) |
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RSJ550N10 R1120A |