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    LPCC 24 Search Results

    LPCC 24 Result Highlights (1)

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    LP-CC2652RSIP
    Texas Instruments SimpleLink™ multi-protocol CC2652RSIP wireless module LaunchPad™ development kit Visit Texas Instruments Buy
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    LPCC 24 Price and Stock

    iEi Integration Corporation

    iEi Integration Corporation DRPC-242-ADL-P-CCS-R10

    Embedded Box Computers Embedded system with 12th Gen Intel Celeron G7305
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    DRPC-242-ADL-P-CCS-R10
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    LPCC 24 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    LPCC 24

    Abstract: PROCESS inspection LPCC AN-0001 thermal simulation of IC package thermal pcb guidelines
    Contextual Info: Assembly of LPCC Packages AN-0001 Surface Mount Assembly and Handling of ANADIGICS LPCC Packages 1.0 Overview ANADIGICS power amplifiers are typically packaged in a Leadless Plastic Chip Carrier LPCC package. These LPCC packages have two types of pads, mounting pads and a thermal pad, both of which must be


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    AN-0001 LPCC 24 PROCESS inspection LPCC AN-0001 thermal simulation of IC package thermal pcb guidelines PDF

    GETEK FR4

    Abstract: 113 marking code transistor ROHM mga 017 Philips sot 23-5 package marking transistor tt 2170 low noise high frequency HEMT from agilent rf amplifier broad band SF128 CAPACITOR chip mtbf atf GaAs FET HEMT Chips
    Contextual Info: ATF-521P8 High Linearity Enhancement Mode [1] ­Pseudomorphic HEMT in 2x2 mm2 LPCC[3] ­Package Data Sheet Avago Technologies’ ATF‑521P8 is a single-voltage high linearity, low noise E‑pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier LPCC[3] package.


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    ATF-521P8 ATF521P8 5988-9974EN GETEK FR4 113 marking code transistor ROHM mga 017 Philips sot 23-5 package marking transistor tt 2170 low noise high frequency HEMT from agilent rf amplifier broad band SF128 CAPACITOR chip mtbf atf GaAs FET HEMT Chips PDF

    qfn 44 PACKAGE footprint

    Abstract: qfn 76 PACKAGE footprint ML6652CM qfn 48 PACKAGE footprint QFN 36 footprint qfn 64 pcb layout ML6652CH ML6652 LPCC44 eco solder paste
    Contextual Info: AN-002 - ML6652 TQFP-LPCC DUAL FOOTPRINT TECHNIQUE AN-002 ML6652 TQFP-LPCC DUAL FOOTPRINT TECHNIQUE Introduction In November 2003, the ML6652CM/EM package version of the ML6652 10/100 Mb/s Ethernet Media Converter was introduced. The ML6652CM/EM is the QFN/LPCC44 package version of the ML6652. The


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    AN-002 ML6652 AN-002 ML6652CM/EM QFN/LPCC44 ML6652. ML6652CH/EH qfn 44 PACKAGE footprint qfn 76 PACKAGE footprint ML6652CM qfn 48 PACKAGE footprint QFN 36 footprint qfn 64 pcb layout ML6652CH LPCC44 eco solder paste PDF

    wireless

    Abstract: PR3500 PR3600 Prominent Communications MS-3500-H002-R07 gfsk "digital transmitter" IC 2.4 ghz Transmitter IC audio
    Contextual Info: PR3500 2.4-GHz Wireless Transmitter FEATURES: • • • • Complete Transmitter Very Low Power Consumption Capable of transmitting up to 32 separate Channels in the Globally Unlicensed ISM-2.4GHz Band Companion to PR3600 Receiver PACKAGE TYPE: QFN 24L LPCC


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    PR3500 PR3600 PR3500 PR3600) MS-3500-H002-R07 wireless Prominent Communications MS-3500-H002-R07 gfsk "digital transmitter" IC 2.4 ghz Transmitter IC audio PDF

    diagram transistor tt 2140

    Abstract: Transistor TT 2140 SF128 ba 662 CHIP OBSOLETES LL1005-FS39 transistor Amp 2054 equivalent GETEK FR4 0402CG129C9B200 HEMT marking BA L439
    Contextual Info: Agilent ATF-521P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and P1dB Agilent Technologies’s ATF-521P8 is a single-voltage high linearity, low noise


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    ATF-521P8 5988-9974EN diagram transistor tt 2140 Transistor TT 2140 SF128 ba 662 CHIP OBSOLETES LL1005-FS39 transistor Amp 2054 equivalent GETEK FR4 0402CG129C9B200 HEMT marking BA L439 PDF

    SF 829 B

    Abstract: 8 905 958 460 Jumbo LED sf 829 ATF-501P8 CHB 702 902-145 905-170 A004R ATF-501P8-BLK
    Contextual Info: ATF-501P8 High Linearity Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Data Sheet Description Avago Technologies’s ATF-501P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8lead JEDEC-standard leadless plastic chip carrier


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    ATF-501P8 ATF-501P8 5988-9767EN SF 829 B 8 905 958 460 Jumbo LED sf 829 CHB 702 902-145 905-170 A004R ATF-501P8-BLK PDF

    A004R

    Abstract: MGA-425P8 MGA-425P8-BLK MGA-425P8-TR1 MGA-425P8-TR2
    Contextual Info: Agilent MGA-425P8 GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package Data Sheet Features • Near 50Ω broadband output match • Single +3.3V supply Description Agilent Technologies’s MGA-425P8 power amplifier is designed for wireless application in the


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    MGA-425P8 5989-1068EN A004R MGA-425P8 MGA-425P8-BLK MGA-425P8-TR1 MGA-425P8-TR2 PDF

    TQ5M31

    Contextual Info: WIRELESS COMMUNICATIONS DIVISION TQ5M34 DATA SHEET LO VDD GIC GND LO In IF Out GND 3V Downconverter Mixer IC Features § Single +2.8V Operation GND RF In § Adjustable Gain/IP3/Current § Low Current Operation § Few external components § LPCC 3x3mm, 8 Pin Plastic Package


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    TQ5M34 TQ5M34 500MHz 45MHz TQ5M31 PDF

    s-parameter s11 s12 s21 10000

    Abstract: 742 793 0 0 281 002 468 441 044 107 0 82-2 BLK Agilent 322 dfp 20 pin K 409 MARKING CODE 444 NF 841
    Contextual Info: MGA-425P8 GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package Data Sheet Description Avago Technologies’s MGA-425P8 power amplifier is designed for wireless application in the 2–10 GHz frequency range. The PA has a high power efficiency PAE achieved


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    MGA-425P8 MGA-425P8 5989-1068EN s-parameter s11 s12 s21 10000 742 793 0 0 281 002 468 441 044 107 0 82-2 BLK Agilent 322 dfp 20 pin K 409 MARKING CODE 444 NF 841 PDF

    BCV62

    Abstract: DTC143EE
    Contextual Info: RFS P5032 5 GHz 802.11a WLAN Power Amplifier PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • 3.5% EVM @ POUT = +19 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 24.5 dB of Linear Power Gain at 5 GHz • Single +3.3 V Supply • 3 mm x 3 mm x 0.9 mm LPCC •


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    P5032 P5032 BCV62 DTC143EE PDF

    IAM93516

    Abstract: IAM-93516 IAM-93516-BLK IAM-93516-TR1 IAM-93516-TR2
    Contextual Info: Agilent IAM-93516 High Linearity Integrated GaAs Mixer Data Sheet Description Agilent Technologies’s IAM93516 is a high linearity GaAs FET Mixer using 0.5um enhancement mode pHEMT technology. This device houses in a 3x3 LPCC package. The IAM-93516 has a built-in LO


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    IAM-93516 IAM93516 IAM-93516-TR2 IAM-93516-BLK 5989-2800EN IAM-93516-BLK IAM-93516-TR1 IAM-93516-TR2 PDF

    1px marking code

    Abstract: 1px transistor 1px code ATF-511P8 ATF-511P8-TR1 ATF-511P8-BLK ATF-511P8-TR2 MO229 1P LNA
    Contextual Info: Agilent ATF-511P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and P1dB • Low noise figure Pin 8 Pin 7 Drain Pin 6 Pin 5 Source (Thermal/RF Gnd) Description


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    ATF-511P8 5988-8246EN 5989-0003EN 1px marking code 1px transistor 1px code ATF-511P8-TR1 ATF-511P8-BLK ATF-511P8-TR2 MO229 1P LNA PDF

    ATF-531P8-BLK

    Abstract: ATF-531P8-TR1 ATF-531P8 ATF-531P8-TR2 MO229 0840 057 OIP350 marking 0836 atf531p8 atf531
    Contextual Info: Agilent ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and gain • Low noise figure Pin 8 Pin 7 Drain Pin 6 Pin 5 Source (Thermal/RF Gnd) Description


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    ATF-531P8 5988-8407EN 5988-9990EN ATF-531P8-BLK ATF-531P8-TR1 ATF-531P8-TR2 MO229 0840 057 OIP350 marking 0836 atf531p8 atf531 PDF

    BCV62

    Abstract: DTC143EE
    Contextual Info: RFS P5032 5 GHz 802.11a WLAN Power Amplifier PRELIMINARY DATA SHEET - Rev 1.4 FEATURES • 3.5% EVM @ POUT = +19 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 24.5 dB of Linear Power Gain at 5 GHz • Single +3.3 V Supply • 3 mm x 3 mm x 0.9 mm LPCC •


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    P5032 P5032 BCV62 DTC143EE PDF

    MRF high power transistor

    Abstract: transmitter microwave electronic transformer halogen mmds down converter "Up/Down Converter" amplifier marking code a FET GAAS marking a PHEMT marking code a gaas fet marking a gaas Low Noise Amplifier
    Contextual Info: IAM-92516 High Linearity GaAs FET Mixer Data Sheet Description Avago Technologies’s IAM-92516 is a high linearity GaAs FET Mixer using 0.5 µm enhancement mode pHEMT technology. This device houses in Pb-free and Halogen free 16 pins LPCC 3x3[2] plastic package. The IAM-92516 has


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    IAM-92516 IAM-92516 5989-0975EN MRF high power transistor transmitter microwave electronic transformer halogen mmds down converter "Up/Down Converter" amplifier marking code a FET GAAS marking a PHEMT marking code a gaas fet marking a gaas Low Noise Amplifier PDF

    amplifier if 38,9 MHz

    Abstract: 3.gnd 8-leads 8.2 13.56 crystal 26 Mhz package 2 x 6 dfp 20 pin gaas Low Noise Amplifier Buffer Amplifier Ghz S 76 3 TB zo 107 MGA-665P8-BLK
    Contextual Info: MGA-665P8 GaAs Enhancement-Mode PHEMT 0.5 – 6 GHz Low Noise Amplifier Data Sheet Surface Mount, 2.0 x 2.0 x 0.75 mm 8-lead LPCC Description Avago’s MGA-665P8 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with a unique active-low power-down function. The LNA has low


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    MGA-665P8 MGA-665P8 5989-2314EN amplifier if 38,9 MHz 3.gnd 8-leads 8.2 13.56 crystal 26 Mhz package 2 x 6 dfp 20 pin gaas Low Noise Amplifier Buffer Amplifier Ghz S 76 3 TB zo 107 MGA-665P8-BLK PDF

    14 pin ic 555

    Abstract: BCV62 DTC143EE
    Contextual Info: RFS P5022 5 GHz 802.11a WLAN Power Amplifier PRELIMINARY DATA SHEET - Rev 1.4 FEATURES • 3.5% EVM @ POUT = +19 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 24.5 dB of Linear Power Gain at 5 GHz • Single +3.3 V Supply • 3 x 3 x 0.9 mm LPCC • < 1 dB Gain Variation From 4.9 - 5.9 GHz


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    P5022 P5022 14 pin ic 555 BCV62 DTC143EE PDF

    BCV62

    Abstract: DTC143EE LP-CC-10
    Contextual Info: RFS P5022 5 GHz 802.11a WLAN Power Amplifier PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • 3.5% EVM @ POUT = +19 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 24.5 dB of Linear Power Gain at 5 GHz • Single +3.3 V Supply • 3 x 3 x 0.9 mm LPCC • < 1 dB Gain Variation From 4.9 - 5.9 GHz


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    P5022 P5022 BCV62 DTC143EE LP-CC-10 PDF

    LPCC-48

    Abstract: LO1B TRF1112 TRF1212
    Contextual Info: TRF1112, TRF1212 www.ti.com SLWS175 – APRIL 2005 3.5-GHz Integrated IF Up-Converter • • • • • • • • DESCRIPTION LPCC−48 PACKAGE TOP VIEW CP2O LD1 LF1 EN FRBP VCCD1 FR VCCD2 CLK DATA LF2 LD2 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4


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    TRF1112, TRF1212 SLWS175 LPCC-48 TRF1112 TRF1212 LO1B PDF

    mga-665p8

    Abstract: A004R MGA-665P8-BLK MGA-665P8-TR1 MGA-665P8-TR2 NF50
    Contextual Info: Agilent MGA-665P8 GaAs Enhancement-Mode PHEMT 0.5 – 6 GHz Low Noise Amplifier Data Sheet Surface Mount, 2.0 x 2.0 x 0.75 mm 8-lead LPCC Description Agilent’s MGA-665P8 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with a unique active-low powerdown function. The LNA has low


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    MGA-665P8 MGA-665P8 5989-2314EN A004R MGA-665P8-BLK MGA-665P8-TR1 MGA-665P8-TR2 NF50 PDF

    ku-band pll lnb

    Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
    Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)


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    11a/b/g AV00-0061EN AV00-0116EN ku-band pll lnb MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package PDF

    ISDB-t modulator

    Abstract: ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316
    Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)


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    11a/b/g AV00-0116EN AV00-0141EN ISDB-t modulator ku-band pll lnb HP 5082-3081 MMIC SOT 363 power fet 70 mil micro-X Package VCO 9GHZ 10GHZ MGA-30116 mga-62563 mga 51563 MGA-30316 PDF

    AT-41435

    Abstract: transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC
    Contextual Info: Agilent Technologies Transistors Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P1 dB, G1 dB, and |S21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


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    AT-30511 OT-143 AT-30533 OT-23 AT-31011 AT-31033 5988-9509EN 5989-0925EN AT-41435 transistor D 2394 ATF pHEMT 5989-0925EN ATF-511P8 AT-41533 ATF-38143 AT-41486 ATF-501P8 LPCC PDF

    LPCC 4x4 24

    Abstract: 1031W HONEYWELL DBM GMJ00004 HRF-SW1030 HRF-SW1031 HRF-SW1031-B HRF-SW1031-E HRF-SW1031-TR
    Contextual Info: HRF-SW1031 Preliminary SP6T Absorptive RF Switch Features • · · · · · · · High Isolation Of > 40 dB @ 2 GHz Low Insertion Loss Of 1.9 dB @ 2 GHz DC To 3000 MHz Operating Frequency Integrated CMOS Control Logic Integrated ESD Protection on Digital I/O


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    HRF-SW1031 HRF-SW1031 LPCC 4x4 24 1031W HONEYWELL DBM GMJ00004 HRF-SW1030 HRF-SW1031-B HRF-SW1031-E HRF-SW1031-TR PDF