LP9435 Search Results
LP9435 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
LP9435LT1G
Abstract: p94 marking lp9435
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Original |
LP9435LT1G 236AB) 3000/Tape LP9435LT3G 10000/Tape OT-23 LP9435LT1G p94 marking lp9435 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, Ids@-5.3A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.2A = 100mΩ LP9435LT1G S-LP9435LT1G 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance |
Original |
LP9435LT1G S-LP9435LT1G 236AB) AEC-Q101 3000/Tape LP9435LT3G S-LP9435LACTERISTICS | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. LP9435ET1G GENERAL FEATURES ● VDS = -30V,ID = -5.3A RDS ON < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D D D 8 7 D |
Original |
LP9435ET1G | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, Ids@-5.3A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.2A = 100mΩ LP9435LT1G 3 Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance |
Original |
LP9435LT1G 236AB) OT-23 |