LP721 Search Results

L271

Abstract: 01UF 100OHM 180PF 33PF L2711 LP721
Contextual Info: LP721 7.5V Chart 1 L2711 Pin vs Pout F=500 MHZ; Idq=.4;Vds=7.5V 13 8 7 12 POUT IN WATTS 6 5 Gain 11 4 3 Efficiency = 55% 10 2 1 9 0.1 0.2 0.3 0.4 0.5 PIN IN WATTS Page 1 0.6 0.7 0.8 0.9 GAIN IN DB Pout Vgs 7.5Vdc 8 7 R1 8.2KOHM C1 33PF RFin 1 2 .8-18pf L1 4.7NH

LP721

Contextual Info: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

Contextual Info: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

Contextual Info: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

171B

Abstract: TB171B 20AWG LP721
Contextual Info: Polyfet RF Devices TB171B Vds=12.5Vdc Idq=0.6A Efficiency=60% at 15W Pout=15W LP721 Frequency=450-470 MHz TB-171B G ain/Efficiency vs Freq; VDS=12.5Vdc Idq=0.6A 20 70 18 60 50 Efficiency Gain 16 Pout fixed at 15W 40 14 30 12 20 10 10 8 450 452 454 456 458

LDMOS 15w

Abstract: LP721
Contextual Info: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

LP721

Abstract: LDMOS
Contextual Info: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

10NF

Abstract: 30PF 470PF 47PF 47UF LP721 TB-174
Contextual Info: 6 Volt VDD R F in C1 43P F C6 1NF G e n d io d e R1 10K 10K Pot 3 tu rn s 22AW G .0 7 8 " d ia 2 .7 V z e n e r R2 100 C9 .0 1 U F .0 7 8 " d ia 22AW G 4 tu rn s R 4 120 C10 47PF LP721 10 C20 10NF 22AW G 1 0 tu rn s 8 5 0 m u te rro id J.Citrolo 3 tu rn s

mcp3021z

Abstract: P621GB DPC817B DPC-817B p621g P620GB p620-gb TLP622 621-4G Toshiba P521 Photocoupler
Contextual Info: PHOTOCOUPLER CROSS REFERENCE For user’s convenience, the Sharp equivalents in comparison with the other m anufacturers’ products are suggested in this list. The data is prepared on the basis of main electrical and mechanical characteristics, however, Sharp assumes no responsibility for the actual use of the data and for the specifications of other

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

rf push pull mosfet power amplifier

Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Contextual Info: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30