LP4101LT1G
Abstract: lp4101
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V LP4101LT1G S-LP4101LT1G RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ Features 3 Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
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lp4101lt1gs-lp4101lt1g236abaec-q101+2ot-23lp4101
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LP4101LT1G
Abstract: P41 sot-23 mark 642 sot 363 MARKING d1 sot-723 SC-75 SOT-353 MARKING 8v sot-23 single diode mark PD
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP4101LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance
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lp4101lt1g236ab3000/tapelp4101lt3g+10000/tape195mm150mm3000pcs/reelp41 sot-23mark 642 sot 363marking d1 sot-723sc-75sot-353 marking 8vsot-23 single diode mark pd
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