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    LRC Leshan Radio Co Ltd LP2305LT1G

    (Alt: LP2305LT1G)
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    Avnet Asia LP2305LT1G 12 Weeks 30,000
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    Leshan Radio LP2305LT1G

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    Vyrian LP2305LT1G 239
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    LP2305LT1G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. LP2305LT1G S-LP2305LT1G 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, Ids@-4.2A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.0A = 85 mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 130mΩ 3 1 2 FEATURES Advanced trench process technology


    Original     		LP2305LT1G S-LP2305LT1G AEC-Q101 236AB) LP2305LT3G S-LP2305LT3G 3000/Tape 10000/Tape PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET LP2305LT1G VDS= -30V RDS ON , Vgs@-10V, Ids@-4.2A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.0A = 85 mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 130mΩ 3 1 2 SOT– 23 (TO–236AB) FEATURES Advanced trench process technology


    Original     		LP2305LT1G 236AB) 3000/Tape 05LT1G OT-23 PDF

    SOT-23 marking 352 MOSFET

    Abstract: LP2305LT1G lp2305
    Contextual Info: LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET LP2305LT1G VDS= -30V RDS ON , Vgs@-10V, Ids@-4.2A = 70mΩ RDS(ON), Vgs@-4.5V, Ids@-4.0A = 85 mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 130mΩ 3 1 2 SOT– 23 (TO–236AB) FEATURES Advanced trench process technology


    Original     		LP2305LT1G 236AB) 3000/Tape LP2305LT3G 10000/Tape OT-23 SOT-23 marking 352 MOSFET LP2305LT1G lp2305 PDF