LOW VOLTAGE TRIACS Search Results

Contextual Info: TMMDB3TG TRIGGER DIODES FEATURES • ■ n VBO : 32V Low breakover voltage: 15µA max Breakover voltage range: 30 to 34V DESCRIPTION Functioning as a trigger diode with a fixed voltage reference, the TMMDB3TG can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp

bta 700

Abstract: BTA08 BTB08 BTB08600 BTA08TW
Contextual Info: BTA08 TW/SW BTB08 TW/SW LOGIC LEVEL TRIACS . . FEATURES LOW IGT = 5mA max LOW IH = 15mA max HIGH EFFICIENCY SWITCHING BTA Family : INSULATING VOLTAGE = 2500V RMS (UL RECOGNIZED : E81734) DESCRIPTION A1 A2 The BTA/BTB08 TW/SW use high performance products glass passivated chips.

BTA 139

Contextual Info: BTA06 TW/SW BTB06 TW/SW LOGIC LEVEL TRIACS . . FEATURES LOW IGT = 5mA max LOW IH = 15mA max HIGH EFFICIENCY SWITCHING BTA Family : INSULATING VOLTAGE = 2500V RMS (UL RECOGNIZED : E81734) DESCRIPTION A1 A2 The BTA/BTB06 TW/SW use high performance products glass passivated chips.

Contextual Info: BTA08 S/A BTB08 S/A SENSITIVE GATE TRIACS . . TO220AB Plastic FEATURES VERY LOW IGT = 10mA max LOW IH = 25mA max BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB08 S/A triac family are high performance glass passivated PNPN devices.

DB-3 DIAC specifications

Abstract: DB3TG datasheet DIAC diac db3tg T410 diac diac 32v
Contextual Info: DB3TG DIAC FEATURES • ■ ■ VBO : 32V Low breakover current: 15µA max Breakover voltage range: 30 to 34V DESCRIPTION Functioning as a trigger diode with a fixed voltage reference, the DB3TG can be used in conjunction with triacs for simplified gate control circuits or as

Contextual Info: DB3TG DIAC FEATURES • ■ n VBO : 32V Low breakover current: 15µA max Breakover voltage range: 30 to 34V DESCRIPTION Functioning as a trigger diode with a fixed voltage reference, the DB3TG can be used in conjunction with triacs for simplified gate control circuits or as

ignitor

Contextual Info: MKP3V120, MKP3V240 Sidac High Voltage Bidirectional Triggers Bidirectional devices designed for direct interface with the AC power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on−state.

ignitor

Contextual Info: MKP1V120 Series Sidac High Voltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on−state. Conduction

MKP3V240G

Abstract: 3V120 E116110 MKP3V120 MKP3V120G MKP3V120RL MKP3V120RLG MKP3V240 MKP3V240RL MKP3V240RLG
Contextual Info: MKP3V120, MKP3V240 Preferred Device Sidac High Voltage Bidirectional Triggers Bidirectional devices designed for direct interface with the AC power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on−state.

MKP1V240

Abstract: E116110 MKP1V120 MKP1V120RLG MKP1V130 MKP1V130RLG MKP1V160 MKP1V160G MKP1V160RLG
Contextual Info: MKP1V120 Series Sidac High Voltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on−state. Conduction

BZX61

Abstract: BZX81 zener diode bzy88 BZY88 bs9305n041 diode zener BZX61 C 10 1N748A 1N759A
Contextual Info: Silicon voltage regulator diodes low power corIt. 400mW Type Nom. Zener No. Voltage ¡BZY88 (cont) (V) 10 book 1 iDart Min. Voltage (VI Measured at Test lz Max. Voltage (V) 10.6 25 +7.0 5 2.5 7 11.6 25 +8.7 5 2.5 7 Max. Slope Resistance (ft) Typ. Temp. Coefficient

E116110

Abstract: MKP3V120 MKP3V120RL MKP3V240 MKP3V240RL
Contextual Info: MKP3V120, MKP3V240 Preferred Device Sidac High Voltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on–state. Conduction

DO41

Abstract: E116110 MKP1V120 MKP1V120RL MKP1V130 MKP1V130RL MKP1V160 MKP1V160RL MKP1V240 MKP1V240RL
Contextual Info: MKP1V120 Series Preferred Device Sidac High Voltage Bidirectional Triggers Bi–directional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on–state.

MKP1V120RLG

Abstract: E116110 MKP1V120 MKP1V120RL MKP1V130 MKP1V130RL MKP1V130RLG MKP1V160 MKP1V240 MKP1V240RLG
Contextual Info: MKP1V120 Series Preferred Device Sidac High Voltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on−state. Conduction

diac marking

Abstract: T410 diac
Contextual Info: TMMDB3TG DIAC FEATURES • ■ ■ VBO : 32V Low breakover current: 15µA max Breakover voltage range: 30 to 34V DESCRIPTION Functioning as a trigger diode with a fixed voltage reference, the TMMDB3TG can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp

triac BTA 32 600

Abstract: TRIAC BTB 04
Contextual Info: BTA04 T/D/S/A BTB04 T/D/S/A SENSITIVE GATE TRIACS TO-220AB FEATURES Very low IGT = 10mA max Low IH = 15mA max BTA Family: Insulating voltage = 2500V RMS (UL recognized: E81734) • ■ ■ DESCRIPTION The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices.

triac BTA 32 600

Abstract: triac bta 06 400v TRIAC BTA 400 BTA triac bta 06 400 v TRIAC BTB 04 TRIAC BTA 08 600 D TRIAC BTA 6 bta 10 400v TRIAC BTa 08 700
Contextual Info: BTA04 T/D/S/A BTB04 T/D/S/A SENSITIVE GATE TRIACS A2 FEATURES Very low IGT = 10mA max Low IH = 15mA max BTA Family: Insulating voltage = 2500V RMS (UL recognized: E81734) • ■ G ■ A1 DESCRIPTION The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices.

BTA06

Abstract: BTB06 T0220AB b5M25
Contextual Info: BTA06 TW/SW BTB06 TW/SW Æ 7 SGS-THOMSON ^ 7 Ms E S O Œ I M M I U iÊ Â ô ! ] D Ê i LOGIC LEVEL TRIACS FEATURES • ■ ■ ■ LOW Iqt = 5mA max LOW Ih —15mA max HIGH EFFICIENCY SWITCHING BTA Family: INSULATING VOLTAGE = 2500V rm S (UL RECOGNIZED: E81734)

BZX87

Abstract: zener bzx87 c5v8 zener
Contextual Info: Silicon voltage regulator diodes low power cont. book 1 part 3 Outline SOD—51 Drawing reference V 1 ,5 W (Tamt)*= 25°C) Ì 5% voltage toi «rance Type No. BZX87 Nom. Zerter Voltage (V) Min. Vottage (V) —C5V1 -CSV6 5.1 5.6 4.8 5.2 5.8 6.4 Typ. Temp.

Contextual Info: LITE-ON SEMICONDUCTOR T4M10F800BSS TRIACS 4 AMPERES RMS 800 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES Passivated Die for Reliability and Uniformity Four-Quadrant Triggering Blocking Voltage to 800 V Low Level Triggering and Holding Characteristics

T4M10F-800FSS

Abstract: T4M10F-800F
Contextual Info: LITE-ON SEMICONDUCTOR Sensitive Gate Triacs Sillicon Bidirectional Thyristors T4M10F800FSS TRIACS 4 AMPERES RMS 800 VOLTS TO-126 FEATURES Passivated Die for Reliability and Uniformity Four-Quadrant Triggering Blocking Voltage to 800 V Low Level Triggering and Holding Characteristics

Contextual Info: LITE-ON SEMICONDUCTOR T4M10F800BSS TRIACS 4 AMPERES RMS 800 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES Passivated Die for Reliability and Uniformity Four-Quadrant Triggering Blocking Voltage to 800 V Low Level Triggering and Holding Characteristics

Contextual Info: LITE-ON SEMICONDUCTOR T2M10F800B TRIACS 2 AMPERES RMS 800 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES Passivated Die for Reliability and Uniformity Four-Quadrant Triggering Blocking Voltage to 800 V Low Level Triggering and Holding Characteristics

Contextual Info: LITE-ON SEMICONDUCTOR T2M10F800B TRIACS 2 AMPERES RMS 800 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES Passivated Die for Reliability and Uniformity Four-Quadrant Triggering Blocking Voltage to 800 V Low Level Triggering and Holding Characteristics