LOW VCE TRANSISTOR Search Results
LOW VCE TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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NFMJMPL226R0G5D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
NFMJMPC156R0G3D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
NFM31PC276D0E3L | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
FO-LSDUALSCSM-003 |
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Amphenol FO-LSDUALSCSM-003 SC-SC Duplex Single-Mode 9/125 Fiber Optic Patch Cable (OFN-LS Low Smoke) - 2 x SC Male to 2 x SC Male 3m | |||
CS-DSLSZH25MF-002.5 |
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Amphenol CS-DSLSZH25MF-002.5 25-Pin (DB25) LSZH Low Smoke D-Sub Cable - Double Shielded + EMI Cage - Male / Female 2.5ft |
LOW VCE TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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NSV40201LT1G
Abstract: NSV40201 NSS40201LT1G
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NSS40201LT1G, NSV40201LT1G NSS40201L/D NSV40201 NSS40201LT1G | |
NSS40300MZ4T1G
Abstract: NSS40300MZ4 NSS40300MZ4T3G
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NSS40300MZ4 NSS40300MZ4/D NSS40300MZ4T1G NSS40300MZ4 NSS40300MZ4T3G | |
NSS40301MZ4
Abstract: NSS40301MZ4T1G NSS40301MZ4T3G
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NSS40301MZ4 NSS40301MZ4/D NSS40301MZ4 NSS40301MZ4T1G NSS40301MZ4T3G | |
NSV60600MZ4
Abstract: NSV60600
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NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G NSS60600MZ4/D NSV60600MZ4 NSV60600 | |
Contextual Info: NSS12501UW3T2G 12 V, 7.0 A, Low VCE sat NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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NSS12501UW3T2G NSS12501UW3/D | |
Contextual Info: NSS40301MZ4, NSV40301MZ4T1G Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed |
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NSS40301MZ4, NSV40301MZ4T1G NSS40301MZ4/D | |
AYW marking code IC
Abstract: NSS60600MZ4T1G NSS60600MZ4T3G E3- marking
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NSS60600MZ4 NSS60600MZ4/D AYW marking code IC NSS60600MZ4T1G NSS60600MZ4T3G E3- marking | |
Contextual Info: NSS1C200MZ4 100 V, 2.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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NSS1C200MZ4 NSS1C200MZ4/D | |
NSS20201MR6T1GContextual Info: NSS20201MR6T1G 20 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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NSS20201MR6T1G NSS20201MR6/D NSS20201MR6T1G | |
NSS12200LT1GContextual Info: NSS12200LT1G 12 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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NSS12200LT1G NSS12200L/D NSS12200LT1G | |
WDFN3
Abstract: NSS40500UW3T2G
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NSS40500UW3T2G NSS40500UW3/D WDFN3 NSS40500UW3T2G | |
NSS12500UW3T2GContextual Info: NSS12500UW3T2G 12 V, 8.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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NSS12500UW3T2G NSS12500UW3/D NSS12500UW3T2G | |
NSS12500UW3T2GContextual Info: NSS12500UW3T2G 12 V, 8.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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NSS12500UW3T2G NSS12500UW3/D NSS12500UW3T2G | |
506AP
Abstract: NSS40200UW6T1G
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NSS40200UW6T1G NSS40200UW6/D 506AP NSS40200UW6T1G | |
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NSS20500UW3T2GContextual Info: NSS20500UW3T2G 20 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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NSS20500UW3T2G NSS20500UW3/D NSS20500UW3T2G | |
1C31EG
Abstract: 617 300
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NSS1C301ET4G NSS1C301E/D 1C31EG 617 300 | |
NSS40600CF8T1GContextual Info: NSS40600CF8T1G 40 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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NSS40600CF8T1G NSS40600CF8/D NSS40600CF8T1G | |
NSS12600CF8T1GContextual Info: NSS12600CF8T1G 12 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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NSS12600CF8T1G NSS12600CF8/D NSS12600CF8T1G | |
0118 transistorContextual Info: NSS30071MR6T1G 30 V, 0.7 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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NSS30071MR6T1G NSS30071MR6/D 0118 transistor | |
NSS20200LT1GContextual Info: NSS20200LT1G 20 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications |
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NSS20200LT1G NSS20200L/D NSS20200LT1G | |
Contextual Info: DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA |
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2SC3622, 2SC3622) 2SC3622A) 2SC3622 2SC3622A | |
2sc3623Contextual Info: DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA |
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2SC3623, 2SC3623) 2SC3623A) 2SC3623 2SC3623A | |
2SB1198K
Abstract: 2SD1782K 2SD1782K ROHM
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2SB1198K 2SD1782K. 96-136-B93) 2SB1198K 2SD1782K 2SD1782K ROHM | |
transistor smd bh
Abstract: transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386
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2SB1386 30MHz transistor smd bh transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386 |