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    LOW VCE TRANSISTOR Search Results

    LOW VCE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPL226R0G5D
    		Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose PDF
    NFMJMPC156R0G3D
    		Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose PDF
    NFM31PC276D0E3L
    		Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose PDF
    FO-LSDUALSCSM-003
    		Amphenol Cables on Demand Amphenol FO-LSDUALSCSM-003 SC-SC Duplex Single-Mode 9/125 Fiber Optic Patch Cable (OFN-LS Low Smoke) - 2 x SC Male to 2 x SC Male 3m PDF
    CS-DSLSZH25MF-002.5
    		Amphenol Cables on Demand Amphenol CS-DSLSZH25MF-002.5 25-Pin (DB25) LSZH Low Smoke D-Sub Cable - Double Shielded + EMI Cage - Male / Female 2.5ft PDF

    LOW VCE TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NSV40201LT1G

    Abstract: NSV40201 NSS40201LT1G
    Contextual Info: NSS40201LT1G, NSV40201LT1G 40 V, 4.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		NSS40201LT1G, NSV40201LT1G NSS40201L/D NSV40201 NSS40201LT1G PDF

    NSS40300MZ4T1G

    Abstract: NSS40300MZ4 NSS40300MZ4T3G
    Contextual Info: NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		NSS40300MZ4 NSS40300MZ4/D NSS40300MZ4T1G NSS40300MZ4 NSS40300MZ4T3G PDF

    NSS40301MZ4

    Abstract: NSS40301MZ4T1G NSS40301MZ4T3G
    Contextual Info: NSS40301MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		NSS40301MZ4 NSS40301MZ4/D NSS40301MZ4 NSS40301MZ4T1G NSS40301MZ4T3G PDF

    NSV60600MZ4

    Abstract: NSV60600
    Contextual Info: NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G 60 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G NSS60600MZ4/D NSV60600MZ4 NSV60600 PDF

    Contextual Info: NSS12501UW3T2G 12 V, 7.0 A, Low VCE sat NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		NSS12501UW3T2G NSS12501UW3/D PDF

    Contextual Info: NSS40301MZ4, NSV40301MZ4T1G Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		NSS40301MZ4, NSV40301MZ4T1G NSS40301MZ4/D PDF

    AYW marking code IC

    Abstract: NSS60600MZ4T1G NSS60600MZ4T3G E3- marking
    Contextual Info: NSS60600MZ4 60 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		NSS60600MZ4 NSS60600MZ4/D AYW marking code IC NSS60600MZ4T1G NSS60600MZ4T3G E3- marking PDF

    Contextual Info: NSS1C200MZ4 100 V, 2.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		NSS1C200MZ4 NSS1C200MZ4/D PDF

    NSS20201MR6T1G

    Contextual Info: NSS20201MR6T1G 20 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		NSS20201MR6T1G NSS20201MR6/D NSS20201MR6T1G PDF

    NSS12200LT1G

    Contextual Info: NSS12200LT1G 12 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		NSS12200LT1G NSS12200L/D NSS12200LT1G PDF

    WDFN3

    Abstract: NSS40500UW3T2G
    Contextual Info: NSS40500UW3T2G 40 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		NSS40500UW3T2G NSS40500UW3/D WDFN3 NSS40500UW3T2G PDF

    NSS12500UW3T2G

    Contextual Info: NSS12500UW3T2G 12 V, 8.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		NSS12500UW3T2G NSS12500UW3/D NSS12500UW3T2G PDF

    NSS12500UW3T2G

    Contextual Info: NSS12500UW3T2G 12 V, 8.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		NSS12500UW3T2G NSS12500UW3/D NSS12500UW3T2G PDF

    506AP

    Abstract: NSS40200UW6T1G
    Contextual Info: NSS40200UW6T1G 40 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		NSS40200UW6T1G NSS40200UW6/D 506AP NSS40200UW6T1G PDF

    NSS20500UW3T2G

    Contextual Info: NSS20500UW3T2G 20 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		NSS20500UW3T2G NSS20500UW3/D NSS20500UW3T2G PDF

    1C31EG

    Abstract: 617 300
    Contextual Info: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where


    Original     		NSS1C301ET4G NSS1C301E/D 1C31EG 617 300 PDF

    NSS40600CF8T1G

    Contextual Info: NSS40600CF8T1G 40 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		NSS40600CF8T1G NSS40600CF8/D NSS40600CF8T1G PDF

    NSS12600CF8T1G

    Contextual Info: NSS12600CF8T1G 12 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		NSS12600CF8T1G NSS12600CF8/D NSS12600CF8T1G PDF

    0118 transistor

    Contextual Info: NSS30071MR6T1G 30 V, 0.7 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		NSS30071MR6T1G NSS30071MR6/D 0118 transistor PDF

    NSS20200LT1G

    Contextual Info: NSS20200LT1G 20 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		NSS20200LT1G NSS20200L/D NSS20200LT1G PDF

    Contextual Info: DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA


    Original     		2SC3622, 2SC3622) 2SC3622A) 2SC3622 2SC3622A PDF

    2sc3623

    Contextual Info: DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA


    Original     		2SC3623, 2SC3623) 2SC3623A) 2SC3623 2SC3623A PDF

    2SB1198K

    Abstract: 2SD1782K 2SD1782K ROHM
    Contextual Info: Transistors Low-frequency Transistor *80V, *0.5A 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FExternal dimensions (Unit:s mm) FStructure Epitaxial planar type


    Original     		2SB1198K 2SD1782K. 96-136-B93) 2SB1198K 2SD1782K 2SD1782K ROHM PDF

    transistor smd bh

    Abstract: transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386
    Contextual Info: Transistors SMD Type Low Frequency Transistor 2SB1386 Features Low VCE sat . VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit


    Original     		2SB1386 30MHz transistor smd bh transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386 PDF