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    LOW NOISE P-CHANNEL FET Search Results

    LOW NOISE P-CHANNEL FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P
    Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P PDF
    NFMJMPL226R0G5D
    Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose PDF
    NFMJMPC156R0G3D
    Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose PDF
    NFM31PC276D0E3L
    Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose PDF
    FO-LSDUALSCSM-003
    Amphenol Cables on Demand Amphenol FO-LSDUALSCSM-003 SC-SC Duplex Single-Mode 9/125 Fiber Optic Patch Cable (OFN-LS Low Smoke) - 2 x SC Male to 2 x SC Male 3m PDF

    LOW NOISE P-CHANNEL FET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Ordering number : EN 2841 _ 2 S K 9 3 2 No.2841 N-Channel Junction Silicon FET High-Frequency Low-Noise Amp Applications A p p lic atio n s • AM tuner RF amp, low-noise amp F e a tu re s • Adoption of FBET process •Large lyrsl • Small Ciss


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    2SK932-applied PDF

    cp 035 sanyo

    Abstract: bau 95 2SK932
    Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7 cn 7 0 7 t 000 3=1130 T 2SK932 T - 3 1 -2 5 N-Channel Junction Silicon FET 2050 High-Frequency Low-Noise Amp Applications 2841 A p p lic a tio n s • AM tu n er R F am p, low-noise am p F e a tu re s • Adoption o f F B E T process


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    2SK932 T-3/-25 2SK932-applied cp 035 sanyo bau 95 PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEM'ìfiS'ì □□176SC 1 713 MGF1425B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 2 5 B low -noise GaAs FET w ith an N -channel S chottky gate is designed fo r use in Ku band amplifiers. FEATURES • Low noise figure N F mln = 1.4 T Y P . @ f = 12 G H z


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    176SC MGF1425B PDF

    2SK4271

    Abstract: ikv hd 2SK427 1404B
    Contextual Info: Ordering n u m b er:E N 1404B ._ 2SK427 NO.1404B N-Channel Junction Silicon FET AM Tuner RF Amp Applications A p p licatio n s • AM tuner RF amps and low-noise amps. F e a tu re s • Large I y f8 I . • Ultralow noise figure. • Small Crss.


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    EN1404B 1404B 2SK427 2SK4271 ikv hd 2SK427 PDF

    Junction-FET

    Abstract: 2SJ164 2SK1104 SC-72
    Contextual Info: Silicon Junction FETs Small Signal 2SJ164 Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS


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    2SJ164 2SK1104 SC-72 Junction-FET 2SJ164 2SK1104 SC-72 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2 • Pin Name


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    2002/95/EC) 2SJ0364G PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Features ■ Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2


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    2002/95/EC) 2SJ0364G PDF

    TC2260

    Abstract: KU 506 transistor NEC D 809 F NE76083A low noise FET NEC U C band FET transistor s-parameters
    Contextual Info: DATA SHEET GaAs MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • P A C K A G E D IM E N S IO N S Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • High associated gain


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    NE76083A NE76083A) NE76083A-2 TC2260 KU 506 transistor NEC D 809 F NE76083A low noise FET NEC U C band FET transistor s-parameters PDF

    Contextual Info: DATA SHEET G a As MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • P A C K A G E DIM EN SIO N S Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • 1,88±0.3


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    NE76083A NE76083A) NE76083A-2 PDF

    2SJ0364

    Abstract: 2SJ364
    Contextual Info: Silicon Junction FETs Small Signal 2SJ0364 (2SJ364) Silicon P-channel junction FET (0.425) Unit: mm For analog switch circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • Low ON resistance • Low-noise characteristics 0.9±0.1


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    2SJ0364 2SJ364) SC-70 2SJ0364 2SJ364 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package ■ Features • Low ON resistance • Low-noise characteristics ■ Absolute Maximum Ratings Ta = 25°C


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    2002/95/EC) 2SJ0364G PDF

    NEC Ga FET marking L

    Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
    Contextual Info: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm


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    NE329S01 NE329S01 NE329S01-T1 NE329S01-T1B NEC Ga FET marking L lg TYP 513 309 low noise FET NEC U SAAI Marking PDF

    2SJ364

    Abstract: 2SJ0364
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364 (2SJ364) Silicon P-channel junction FET For analog switch circuits • Package ■ Features • Code SMini3-G1 • Pin Name • Low ON resistance • Low-noise characteristics


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    2002/95/EC) 2SJ0364 2SJ364) 2SJ364 2SJ0364 PDF

    fet junction n-channel transistor

    Abstract: small signal audio FET 2N4340 N-Channel JFET transistor J-FET philips jfet transistor 2N4340
    Contextual Info: 711002b DDbôO?! ÔT7 • P H IN Philips Semiconductors D ata sh e e t s ta tu s Prelim inary specification d a te of is s u e O ctob e r 1990 FEATURES • Low noise, noise figure < 1 dB • High o ff isolation. 2N4340 N-channel J-FET PINNING - TO-18 PIN 1


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    711Dfi2b 2N4340 711Dfl2b fet junction n-channel transistor small signal audio FET 2N4340 N-Channel JFET transistor J-FET philips jfet transistor 2N4340 PDF

    2SJ111

    Abstract: 2SJ110 2sj111 fet 2SJ103 2SJ74 2SK117 2SK170 2SK246 2SK30ATM 2SK363
    Contextual Info: ufcUI,! —3 o n X CD O to N ro cn o > J U N C T IO N H « 1 FET IDSS Type No. A p p lic a t io n N-Channel General Purpose High lYfsl Low Noise P-Channel V GDS 'G Pd V (mA) (mW) (mA) VpS V GS (V) (V) Crss TYP. V DS V GS V DS F (mS) (V) (V) (V) (MHz) (pF)


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    2SK30ATM 2SK117 2SK170 2SK246 2SK362 2SK363 2SK364 10rrent 2SK373 2SJ74 2SJ111 2SJ110 2sj111 fet 2SJ103 2SK117 2SK170 2SK246 2SK30ATM 2SK363 PDF

    Contextual Info: 1,1.53^31 002405T 333 « A P X P hilips S em iconductors N-channel silicon field-effect transistors Prelim inary specification PM B FJ308/309/310 N AMER PHILIPS/DISCRETE □7E I "- PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and


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    002405T FJ308/309/310 UBB114- PMBFJ308: PMBFJ309: PMBFJ310: -SOT23 PMBFJ308/309/310 PMBFJ308, PDF

    2n3329

    Contextual Info: 2N3329 asi P-CHANNEL SILICON JUNCTION FET DESCRIPTION: The 2N3329 is Designed for Small Signal Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS Id -10 mA V ds 10 V V qs 20 V P diss 300 mW @ Tc = 25 °C T stg -65 to +200°C Tj -65 to +200°C


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    2N3329 2N3329 PDF

    N-Channel, Dual-Gate FET

    Contextual Info: SONY SGM2016M/P1 GaAs N-channel Dual-Gate MES FET D escription Package O utline Unit : mm The SGM2016M/P is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including U H FT V tuners, cellular radios, and DBS IF amplifiers.


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    SGM2016M/P1 SGM2016M/P 900MHz N-Channel, Dual-Gate FET PDF

    Contextual Info: • P hilips Sem iconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfSI/C15. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor


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    0023k. BF998R lYfSI/C15. OT143R bbS3T31 PDF

    2n4221

    Abstract: 2n4220 2N4222 2N4221 transistor Philips MBB 2N4220A 4221 transistor 2N4221A 2N4222A to72 - 2N4221
    Contextual Info: 711Qô2b OObôObfl 2 0 2 • P H I N Philips Semiconductors Data sheet status Preliminary specification date of issue October 1990 2N4220/4220A/4221/4221A/ 4222/4222A N-channel J-FETs FEATURES PINNING - TO-72 • High gain in VHF range • Low receiver noise figure.


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    711002b 2N4220/4220A/4221/4221A/ 4222/4222A 2N4220/4220V 2N4220/A 2N4221/A 2N4222/A 2n4221 2n4220 2N4222 2N4221 transistor Philips MBB 2N4220A 4221 transistor 2N4221A 2N4222A to72 - 2N4221 PDF

    Contextual Info: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections


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    J308/309/310 -TO-92 MCD212 bbS3831 PDF

    2N3329

    Contextual Info: 2N3329 P-CHANNEL SILICON JUNCTION FET DESCRIPTION: The 2N3329 is Designed for Small Signal Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS PACKAGE STYLE TO- 72 Id -1O mA V ds 1O V Vgs 2O V Pd iss 3OO mW @ Te # 25 0C Ts t g -65 to '2OO0C Tj


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    2N3329 PDF

    2N5486

    Contextual Info: bL>53^31 00241E5 S31 H A P X Philips Sem iconductors N-channel field-effect transistors 2N5484; 2N5485; 2N5486 N AMER PHILIPS/DISCRETE L.7E ]> QUICK REFERENCE DATA FEATURES SYMBOL • Low noise • Interchangeability of drain and source connections • High gain.


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    00241E5 2N5484; 2N5485; 2N5486 2N5484 2N5485 pow485; bb53T31 2N5486 PDF

    2n4416

    Abstract: 2n4416 transistor spice 2n4416 transistor 2N4416A SiS 671 HA 7926 "Field Effect Transistor" sis 735 2N4416 equivalent Transistor 2N4416A
    Contextual Info: P hilips Sem iconductors M 7 1 1 0 fl2 ti DDbBDTB 151 • IP H IN N-channel field-effect transistor Product specification 2N4416; 2N4416A QUICK REFERENCE DATA FEATURES o CO • Interchangeability of drain and source connections < SYMBOL • Low noise PARAMETER


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    2N4416; 2N4416A 2N4416 2n4416 2n4416 transistor spice 2n4416 transistor 2N4416A SiS 671 HA 7926 "Field Effect Transistor" sis 735 2N4416 equivalent Transistor 2N4416A PDF