LOW NOISE P-CHANNEL FET Search Results

Contextual Info: Ordering number : EN 2841 _ 2 S K 9 3 2 No.2841 N-Channel Junction Silicon FET High-Frequency Low-Noise Amp Applications A p p lic atio n s • AM tuner RF amp, low-noise amp F e a tu re s • Adoption of FBET process •Large lyrsl • Small Ciss

cp 035 sanyo

Abstract: bau 95 2SK932
Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7 cn 7 0 7 t 000 3=1130 T 2SK932 T - 3 1 -2 5 N-Channel Junction Silicon FET 2050 High-Frequency Low-Noise Amp Applications 2841 A p p lic a tio n s • AM tu n er R F am p, low-noise am p F e a tu re s • Adoption o f F B E T process

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEM'ìfiS'ì □□176SC 1 713 MGF1425B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 2 5 B low -noise GaAs FET w ith an N -channel S chottky gate is designed fo r use in Ku band amplifiers. FEATURES • Low noise figure N F mln = 1.4 T Y P . @ f = 12 G H z

2SK4271

Abstract: ikv hd 2SK427 1404B
Contextual Info: Ordering n u m b er:E N 1404B ._ 2SK427 NO.1404B N-Channel Junction Silicon FET AM Tuner RF Amp Applications A p p licatio n s • AM tuner RF amps and low-noise amps. F e a tu re s • Large I y f8 I . • Ultralow noise figure. • Small Crss.

Junction-FET

Abstract: 2SJ164 2SK1104 SC-72
Contextual Info: Silicon Junction FETs Small Signal 2SJ164 Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2 • Pin Name

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Features ■ Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2

TC2260

Abstract: KU 506 transistor NEC D 809 F NE76083A low noise FET NEC U C band FET transistor s-parameters
Contextual Info: DATA SHEET GaAs MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • P A C K A G E D IM E N S IO N S Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • High associated gain

Contextual Info: DATA SHEET G a As MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • P A C K A G E DIM EN SIO N S Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • 1,88±0.3

2SJ0364

Abstract: 2SJ364
Contextual Info: Silicon Junction FETs Small Signal 2SJ0364 (2SJ364) Silicon P-channel junction FET (0.425) Unit: mm For analog switch circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • Low ON resistance • Low-noise characteristics 0.9±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package ■ Features • Low ON resistance • Low-noise characteristics ■ Absolute Maximum Ratings Ta = 25°C

NEC Ga FET marking L

Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
Contextual Info: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm

2SJ364

Abstract: 2SJ0364
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364 (2SJ364) Silicon P-channel junction FET For analog switch circuits • Package ■ Features • Code SMini3-G1 • Pin Name • Low ON resistance • Low-noise characteristics

fet junction n-channel transistor

Abstract: small signal audio FET 2N4340 N-Channel JFET transistor J-FET philips jfet transistor 2N4340
Contextual Info: 711002b DDbôO?! ÔT7 • P H IN Philips Semiconductors D ata sh e e t s ta tu s Prelim inary specification d a te of is s u e O ctob e r 1990 FEATURES • Low noise, noise figure < 1 dB • High o ff isolation. 2N4340 N-channel J-FET PINNING - TO-18 PIN 1

2SJ111

Abstract: 2SJ110 2sj111 fet 2SJ103 2SJ74 2SK117 2SK170 2SK246 2SK30ATM 2SK363
Contextual Info: ufcUI,! —3 o n X CD O to N ro cn o > J U N C T IO N H « 1 FET IDSS Type No. A p p lic a t io n N-Channel General Purpose High lYfsl Low Noise P-Channel V GDS 'G Pd V (mA) (mW) (mA) VpS V GS (V) (V) Crss TYP. V DS V GS V DS F (mS) (V) (V) (V) (MHz) (pF)

Contextual Info: 1,1.53^31 002405T 333 « A P X P hilips S em iconductors N-channel silicon field-effect transistors Prelim inary specification PM B FJ308/309/310 N AMER PHILIPS/DISCRETE □7E I "- PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and

2n3329

Contextual Info: 2N3329 asi P-CHANNEL SILICON JUNCTION FET DESCRIPTION: The 2N3329 is Designed for Small Signal Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS Id -10 mA V ds 10 V V qs 20 V P diss 300 mW @ Tc = 25 °C T stg -65 to +200°C Tj -65 to +200°C

N-Channel, Dual-Gate FET

Contextual Info: SONY SGM2016M/P1 GaAs N-channel Dual-Gate MES FET D escription Package O utline Unit : mm The SGM2016M/P is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including U H FT V tuners, cellular radios, and DBS IF amplifiers.

Contextual Info: • P hilips Sem iconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfSI/C15. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor

2n4221

Abstract: 2n4220 2N4222 2N4221 transistor Philips MBB 2N4220A 4221 transistor 2N4221A 2N4222A to72 - 2N4221
Contextual Info: 711Qô2b OObôObfl 2 0 2 • P H I N Philips Semiconductors Data sheet status Preliminary specification date of issue October 1990 2N4220/4220A/4221/4221A/ 4222/4222A N-channel J-FETs FEATURES PINNING - TO-72 • High gain in VHF range • Low receiver noise figure.

Contextual Info: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections

2N3329

Contextual Info: 2N3329 P-CHANNEL SILICON JUNCTION FET DESCRIPTION: The 2N3329 is Designed for Small Signal Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS PACKAGE STYLE TO- 72 Id -1O mA V ds 1O V Vgs 2O V Pd iss 3OO mW @ Te # 25 0C Ts t g -65 to '2OO0C Tj

2N5486

Contextual Info: bL>53^31 00241E5 S31 H A P X Philips Sem iconductors N-channel field-effect transistors 2N5484; 2N5485; 2N5486 N AMER PHILIPS/DISCRETE L.7E ]> QUICK REFERENCE DATA FEATURES SYMBOL • Low noise • Interchangeability of drain and source connections • High gain.

2n4416

Abstract: 2n4416 transistor spice 2n4416 transistor 2N4416A SiS 671 HA 7926 "Field Effect Transistor" sis 735 2N4416 equivalent Transistor 2N4416A
Contextual Info: P hilips Sem iconductors M 7 1 1 0 fl2 ti DDbBDTB 151 • IP H IN N-channel field-effect transistor Product specification 2N4416; 2N4416A QUICK REFERENCE DATA FEATURES o CO • Interchangeability of drain and source connections < SYMBOL • Low noise PARAMETER