LOW NOISE P-CHANNEL FET Search Results
LOW NOISE P-CHANNEL FET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P | |||
NFMJMPL226R0G5D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
NFMJMPC156R0G3D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
NFM31PC276D0E3L | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
FO-LSDUALSCSM-003 |
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Amphenol FO-LSDUALSCSM-003 SC-SC Duplex Single-Mode 9/125 Fiber Optic Patch Cable (OFN-LS Low Smoke) - 2 x SC Male to 2 x SC Male 3m |
LOW NOISE P-CHANNEL FET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Ordering number : EN 2841 _ 2 S K 9 3 2 No.2841 N-Channel Junction Silicon FET High-Frequency Low-Noise Amp Applications A p p lic atio n s • AM tuner RF amp, low-noise amp F e a tu re s • Adoption of FBET process •Large lyrsl • Small Ciss |
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2SK932-applied | |
cp 035 sanyo
Abstract: bau 95 2SK932
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2SK932 T-3/-25 2SK932-applied cp 035 sanyo bau 95 | |
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEM'ìfiS'ì □□176SC 1 713 MGF1425B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 2 5 B low -noise GaAs FET w ith an N -channel S chottky gate is designed fo r use in Ku band amplifiers. FEATURES • Low noise figure N F mln = 1.4 T Y P . @ f = 12 G H z |
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176SC MGF1425B | |
2SK4271
Abstract: ikv hd 2SK427 1404B
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EN1404B 1404B 2SK427 2SK4271 ikv hd 2SK427 | |
Junction-FET
Abstract: 2SJ164 2SK1104 SC-72
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2SJ164 2SK1104 SC-72 Junction-FET 2SJ164 2SK1104 SC-72 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2 • Pin Name |
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2002/95/EC) 2SJ0364G | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Features ■ Package • Low ON resistance • Low-noise characteristics • Code SMini3-F2 |
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2002/95/EC) 2SJ0364G | |
TC2260
Abstract: KU 506 transistor NEC D 809 F NE76083A low noise FET NEC U C band FET transistor s-parameters
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NE76083A NE76083A) NE76083A-2 TC2260 KU 506 transistor NEC D 809 F NE76083A low noise FET NEC U C band FET transistor s-parameters | |
Contextual Info: DATA SHEET G a As MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • P A C K A G E DIM EN SIO N S Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • 1,88±0.3 |
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NE76083A NE76083A) NE76083A-2 | |
2SJ0364
Abstract: 2SJ364
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2SJ0364 2SJ364) SC-70 2SJ0364 2SJ364 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0364G Silicon P-channel junction FET For analog switch circuits • Package ■ Features • Low ON resistance • Low-noise characteristics ■ Absolute Maximum Ratings Ta = 25°C |
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2002/95/EC) 2SJ0364G | |
NEC Ga FET marking L
Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
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NE329S01 NE329S01 NE329S01-T1 NE329S01-T1B NEC Ga FET marking L lg TYP 513 309 low noise FET NEC U SAAI Marking | |
2SJ364
Abstract: 2SJ0364
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2002/95/EC) 2SJ0364 2SJ364) 2SJ364 2SJ0364 | |
fet junction n-channel transistor
Abstract: small signal audio FET 2N4340 N-Channel JFET transistor J-FET philips jfet transistor 2N4340
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711Dfi2b 2N4340 711Dfl2b fet junction n-channel transistor small signal audio FET 2N4340 N-Channel JFET transistor J-FET philips jfet transistor 2N4340 | |
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2SJ111
Abstract: 2SJ110 2sj111 fet 2SJ103 2SJ74 2SK117 2SK170 2SK246 2SK30ATM 2SK363
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2SK30ATM 2SK117 2SK170 2SK246 2SK362 2SK363 2SK364 10rrent 2SK373 2SJ74 2SJ111 2SJ110 2sj111 fet 2SJ103 2SK117 2SK170 2SK246 2SK30ATM 2SK363 | |
Contextual Info: 1,1.53^31 002405T 333 « A P X P hilips S em iconductors N-channel silicon field-effect transistors Prelim inary specification PM B FJ308/309/310 N AMER PHILIPS/DISCRETE □7E I "- PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and |
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002405T FJ308/309/310 UBB114- PMBFJ308: PMBFJ309: PMBFJ310: -SOT23 PMBFJ308/309/310 PMBFJ308, | |
2n3329Contextual Info: 2N3329 asi P-CHANNEL SILICON JUNCTION FET DESCRIPTION: The 2N3329 is Designed for Small Signal Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS Id -10 mA V ds 10 V V qs 20 V P diss 300 mW @ Tc = 25 °C T stg -65 to +200°C Tj -65 to +200°C |
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2N3329 2N3329 | |
N-Channel, Dual-Gate FETContextual Info: SONY SGM2016M/P1 GaAs N-channel Dual-Gate MES FET D escription Package O utline Unit : mm The SGM2016M/P is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including U H FT V tuners, cellular radios, and DBS IF amplifiers. |
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SGM2016M/P1 SGM2016M/P 900MHz N-Channel, Dual-Gate FET | |
Contextual Info: • P hilips Sem iconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfSI/C15. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor |
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0023k. BF998R lYfSI/C15. OT143R bbS3T31 | |
2n4221
Abstract: 2n4220 2N4222 2N4221 transistor Philips MBB 2N4220A 4221 transistor 2N4221A 2N4222A to72 - 2N4221
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711002b 2N4220/4220A/4221/4221A/ 4222/4222A 2N4220/4220V 2N4220/A 2N4221/A 2N4222/A 2n4221 2n4220 2N4222 2N4221 transistor Philips MBB 2N4220A 4221 transistor 2N4221A 2N4222A to72 - 2N4221 | |
Contextual Info: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections |
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J308/309/310 -TO-92 MCD212 bbS3831 | |
2N3329Contextual Info: 2N3329 P-CHANNEL SILICON JUNCTION FET DESCRIPTION: The 2N3329 is Designed for Small Signal Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS PACKAGE STYLE TO- 72 Id -1O mA V ds 1O V Vgs 2O V Pd iss 3OO mW @ Te # 25 0C Ts t g -65 to '2OO0C Tj |
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2N3329 | |
2N5486Contextual Info: bL>53^31 00241E5 S31 H A P X Philips Sem iconductors N-channel field-effect transistors 2N5484; 2N5485; 2N5486 N AMER PHILIPS/DISCRETE L.7E ]> QUICK REFERENCE DATA FEATURES SYMBOL • Low noise • Interchangeability of drain and source connections • High gain. |
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00241E5 2N5484; 2N5485; 2N5486 2N5484 2N5485 pow485; bb53T31 2N5486 | |
2n4416
Abstract: 2n4416 transistor spice 2n4416 transistor 2N4416A SiS 671 HA 7926 "Field Effect Transistor" sis 735 2N4416 equivalent Transistor 2N4416A
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2N4416; 2N4416A 2N4416 2n4416 2n4416 transistor spice 2n4416 transistor 2N4416A SiS 671 HA 7926 "Field Effect Transistor" sis 735 2N4416 equivalent Transistor 2N4416A |