LOW LOSS FAST RECOVERY DUAL DIODES Search Results

Contextual Info: Fast Recovery Diodes FRD MA3U649 Silicon planar type (cathode common) Unit: mm 0.8 max. 2.5±0.1 • Small U-type package for surface mounting • Low-loss type with fast reverse recovery time trr • Cathode common dual type 0.5±0.1 1.8±0.1 7.3±0.1 • Features

Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET

fast recovery diode 54

Abstract: BYC10-600CT BYC5-600 BYV29
Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET

TO-220FN

Abstract: LOW LOSS FAST RECOVERY DUAL DIODES RF603B2D TO220FN 220FN RF073M2S RF1003T2D RF103L2S RF303B2S RF503B2S
Contextual Info: RF 3series Diodes Fast recovery Rectifier Diodes Silicon Epitaxial Planar RF 3 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Very fast recovery 2) Low VF 3) Low switching loss

D-PACK

Abstract: RF073M2S RF1003T2D RF103L2S RF303B2S RF503B2S RF603B2D RF603T2D TO-220FN Reverse voltage repetitive peak VRM 60 V application notes frd
Contextual Info: RF 3series Diodes Fast recovery Rectifier Diodes Silicon Epitaxial Planar RF 3 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Very fast recovery 2) Low VF 3) Low switching loss

ic 7400

Abstract: MBB100A6 MBB50A6 MBB75A6 MBM100A6 MBM150A6 MBM200A6 MBM300A6 MBM50A6 MBM75A6
Contextual Info: HITACHI 22 2.6 IGBT Module Range with Soft and Fast SFD Free-Wheeling Diodes In order to maintain switching losses to minimal, improving Free Wheeling Diodes, (FWD), is essential and Hitachi's version of this is the Soft and Fast Recovery (SFD) Free Wheeling Diode.

DFM400XXM45-TS000

Contextual Info: DFM400XXM45-TS000 Fast Recovery Diode Module DS6128-1 October 2013 LN31067 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 800A Rating

FYPF2004DN

Abstract: FFPF30U60DN fairchild korea ffpf30u20s FFPF04F150S 81663-9 FYPF2006DN FFPF14X150S *F30U60DN
Contextual Info: Fast Recovery/Schottky Diodes Product Line Card Fast Recovery Diodes FRDs Schottky Barrier Diodes (SBDs) Fairchild's broad portfolio of Fast Recovery Diodes has been specifically designed to address Ultra Fast Soft Recovery, high-speed and high-voltage design

DFM600XXM65-K000

Abstract: DFM600XXXM65-K000
Contextual Info: DFM600XXXM65-K000 Fast Recovery Diode Module DS5807-1.1 July 2007 LN25500 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated MMC Base plate With AIN Substrates • Dual Diodes Can Be Paralleled for 1200A Rating

DFM450NXM45

Abstract: DS5892-1 DS5892 DFM450NXM45-F000 ln2482
Contextual Info: DFM450NXM45-F000 Fast Recovery Diode Module DS5892-1.0 October 2006 LN24820 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 900A Rating

DFM900FXS12-A000

Abstract: LOW LOSS FAST RECOVERY DUAL DIODES
Contextual Info: DFM900FXS12-A000 Fast Recovery Diode Module DS5846-1.1 June 2007 LN25318 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated Copper Base plate • Dual Diodes Can be paralleled for 1800A Rating •

DFM1200FXS12-A000

Contextual Info: DFM1200FXS12-A000 Fast Recovery Diode Module DS5645-1.1 June 2007 LN25322 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated Copper Base plate • Dual Diodes Can be paralleled for 2400A Rating •

4500a

Abstract: C6250 DFM900NXM45-F000 4500V 900A
Contextual Info: DFM900NXM45-F000 Fast Recovery Diode Module DS5887-1.0 June 2006 LN24652 KEY PARAMETERS FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1800A Rating

motor DC 400V 1600A

Contextual Info: DFM400XXM65-K000 Fast Recovery Diode Module DS5806-1.3 July 2007 LN25462 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated MMC Base plate With AIN Substrates • Dual Diodes Can Be Paralleled for 800A Rating

DFM400NXM33-F000

Abstract: 3300V FRD
Contextual Info: DFM400NXM33-F000 Fast Recovery Diode Module DS5910-1.0 March 2007 LN25214 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 800A Rating

DFM800NXM33-F000

Contextual Info: DFM800NXM33-F000 Fast Recovery Diode Module DS5911-1.0 March 2007 LN25213 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1600A Rating

DFM1200NXM33-F000

Abstract: 100FITS
Contextual Info: DFM1200NXM33-F000 Fast Recovery Diode Module DS5912-1.0 March 2007 LN25215 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 2400A Rating

SBR20A120CTFP

Abstract: SBR30A50CT SBR3U40P1 dfn1006 SBR1045CT IEC61215 ITO220AB DFN1006-2 DFN1006H4-2 SBR0220T5
Contextual Info: DIO 2040 SBR brochure Final Artwork 25/2/10 10:45 Page 1 SBR THE NEXT GENERATION OF RECTIFIERS. www.diodes.com DIO 2040 SBR brochure (Final Artwork) 25/2/10 10:45 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS

DFM600XXM45-F000

Abstract: DS5915-1
Contextual Info: DFM600XXM45-F000 Fast Recovery Diode Module DS5915-1.0 June 2007 LN25309 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1200A Rating

DFM600NXM45-F000

Contextual Info: DFM600NXM45-F000 Fast Recovery Diode Module DS5882-1.0 March 2006 LN24486 KEY PARAMETERS FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1200A Rating

5n fast recovery diodes

Abstract: 30A 45V SCHOTTKY BARRIER RECTIFIER GENERAL SEMICONDUCTOR SMD DIODES smd diode 0.5A fast 600v LOW LOSS FAST RECOVERY DUAL DIODES
Contextual Info: CONTENTS I. II. III. IV. V. SMD RECTIFIER DIODE LIST. SMD PACKAGE OUTLINE DRAWINGS.

snubber FOR 3PHASE BRIDGE RECTIFIER

Abstract: EUPEC Thyristor gct thyristor 74x26mm eupec igbt BSM 100 gb FAST HIGH VOLTAGE DIODE 4000 V EUPEC D1201 D1201 D170S eupec phase control thyristor
Contextual Info: . power the Home Products F-Diode News Contact Editorials GTO Diodes . V RRM = 2500 V 2500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 6000 V 6000 V Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO Snubberdiodes part-no.

U30C05

Abstract: U30C10 U30C15 U30C20
Contextual Info: MOSPEC U30C05 thru U30C20 Switchmode Dual Ultrafast Power Rectifiers ULTRA FAST RECTIFIERS - Designed for use in switching power supplies inverters and as free wheeling diodes. These state-of-the-art devices have the following features: 30 AMPERES 50-200 VOLTS

U10C05

Abstract: U10C10 U10C15 U10C20
Contextual Info: MOSPEC U10C05 thru U10C20 Switchmode Dual Ultrafast Power Rectifiers ULTRA FAST RECTIFIERS - Designed for use in switching power supplies inverters and as free wheeling diodes. These state-of-the-art devices have the following features: 10 AMPERES 50-200 VOLTS