LOW HEMT Search Results

CFH120

Abstract: CFH120-06 CFH120-08 CFH120-10 ts 4302 HEMT marking P
Contextual Info: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers

MAX 8985

Abstract: pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10
Contextual Info: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers

5703 infineon

Abstract: pseudomorphic HEMT CFH120-08 CFH120 CFH120-06 CFH120-10 4511 gm
Contextual Info: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers

GS 9521

Abstract: CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K
Contextual Info: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers

pseudomorphic HEMT

Abstract: CFH120-08 HEMT marking P
Contextual Info: CFH120-08 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers

MARKING CODE l22 lna

Contextual Info: ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Features Avago Technologies’s ATF-331M4 is a high linearity, low noise pHEMT housed in a miniature leadless package. • Low noise figure The ATF-331M4’s small size and low profile makes it

vHF amplifier module

Abstract: l0234 PHEMT marking code a FET marking code 365 n 431 transistor ATF-331M4 ATF-331M4-BLK ATF-331M4-TR1 ATF-331M4-TR2 ATF-34143
Contextual Info: ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Avago Technologies’s ATF-331M4 is a high linearity, low noise pHEMT housed in a miniature leadless package. Features • Low noise figure The ATF-331M4’s small size and low profile makes it

Micro-X marking "K"

Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
Contextual Info: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz

mgf4941al

Abstract: MITSUBISHI electric R22 GD-32
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> Preliminary MGF4941AL 19/Jan./2007 SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure

ATF-36077

Abstract: ATF-36077-STR transistor atf 36077 hemt lnb ATF pHEMT TRANSISTOR zo 109 ma
Contextual Info: ATF-36077 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Data Sheet Description Features AvagoTechnologies' ATF-36077 is an ultra-low-noise Pseudo­ morphic High Electron Mobility Transistor PHEMT , packaged in a low parasitic, surface-mountable ceramic package.

GD-32

Abstract: mgf4941al fet K 727
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz

MGF4963BL

Abstract: InGaAs HEMT mitsubishi MGF4963B MGF496 RO4003C
Contextual Info: 16/Oct./2009 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4963BL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4963BL super-low noise HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. FEATURES Low noise figure @ f=20GHz

Contextual Info: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)

Contextual Info: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)

ATF-35143-BLKG

Abstract: rg1 7809 ATF-35143 application note ATF35143 sot 89 7809 LG 5804 LA 7809
Contextual Info: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-35143 Features • Lead-free Option Available Surface Mount Package SOT-343 • Low Noise Figure • Excellent Uniformity in Product Specifications • Low Cost Surface Mount

MGF4941AL

Abstract: MGF4941 GD-32
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> Preliminary MGF4941AL 26/Dec./2006 SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. ③ FEATURES Low noise figure

1 928 405 766

Abstract: GD-32 rogers 4403
Contextual Info: < Low Noise GaAs HEMT > MGF4941AL Micro-X type plastic package DESCRIPTION The MGF4941AL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.)

MGF4963BL

Abstract: HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B
Contextual Info: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)

top 261

Abstract: GD-32 mgf4941al InGaAs HEMT mitsubishi
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT High Electron Mobility Transistor is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz

MGF4964

Abstract: Micro-X marking "K" MGF4964BL transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496
Contextual Info: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)

ATF-33143

Abstract: ATF-34143
Contextual Info: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-33143 Features • Low Noise Figure Surface Mount Package SOT-343 • Excellent Uniformity in Product Specifications • 1600 micron Gate Width • Low Cost Surface Mount Small Plastic Package

atf34143

Abstract: ATF-33143 ATF-34143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2
Contextual Info: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-34143 Features • Low Noise Figure Surface Mount Package SOT-343 • Excellent Uniformity in Product Specifications • 800 micron Gate Width • Low Cost Surface Mount Small Plastic Package

lna marking code vp

Contextual Info: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-33143 Features • Low Noise Figure Surface Mount Package SOT-343 • Excellent Uniformity in Product Specifications • 1600 micron Gate Width • Low Cost Surface Mount Small Plastic Package

ALH102C

Abstract: Low Noise HEMT ALH102 AL-H ALH IC
Contextual Info: TRYw Superior Performance from the Latest MMIC Technology Low Noise HEMT MMIC Amplifier ALH102C Darlington Amplifier Series • RF Frequency: 2 to 20 GHz • Low Noise Figure < 3.5 dB • 10 dB Gain • Unconditionally Stable • Low DC Power Consumption •