LOW FREQUENCY POWER TRANSISTOR Search Results

Contextual Info: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed

2SD560

Abstract: nec 2sd560 2sd560 equivalent NEC RELAY
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is

mqc505-902

Abstract: smd 78L05 mqc505 78L05 928 WN smd transistor Murata MQC505 mqc505 murata smd transistor 65D MQC505 Series SMD cf5
Contextual Info: Philips Semiconductors Application note Low power single/dual frequency synthesizers: UMA1017M/1018M/1019M AM /1020M(AM) AN95102 Author: P. Hugues UMA1018M and UMA1020M/UMA1020AM low power dual frequency synthesizers UMA1017M and UMA1019M/UMA1019AM low power single frequency synthesizers

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL  DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier.  FEATURES * Low frequency power amplifier 

2sc2275

Abstract: 2SC2275A
Contextual Info: JMnic Product Specification 2SC2275 2SC2275A Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA985/985A ・High breakdown voltage APPLICATIONS ・For low frequency and high frequency power amplifer applicatons PINNING

2SA985

Abstract: 2SA985A 2sc2275
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA985 2SA985A DESCRIPTION •With TO-220 package ·Complement to type 2SC2275/2275A ·High breakdown voltage APPLICATIONS ·For low frequency and high frequency power amplifer applicatons

2SA985

Abstract: 2sc2275 2SA985A
Contextual Info: JMnic Product Specification 2SA985 2SA985A Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2275/2275A ・High breakdown voltage APPLICATIONS ・For low frequency and high frequency power amplifer applicatons PINNING

2sd965 transistor

Abstract: 2SD965 2SD96 transistor 2sd965
Contextual Info: Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the low-voltage power supply.

2SB1097

Abstract: 2SD1588
Contextual Info: JMnic Product Specification 2SB1097 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complement to type 2SD1588 APPLICATIONS ・For low frequency power amplifier and low speed switching applications

2SB708

Abstract: 2sb707 2sd568
Contextual Info: SavantIC Semiconductor Product Specification 2SB707 2SB708 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD568/569 APPLICATIONS ·For low frequency power amplifier low speed switching industrial use PINNING PIN DESCRIPTION

2SB601

Abstract: ic3a 17C IC
Contextual Info: SavantIC Semiconductor Product Specification 2SB601 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequency power amplifier and low-speed switching applications

2SD1581

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and low power loss. This transistor is

2sb707

Abstract: 2sd568 2SB708
Contextual Info: JMnic Product Specification Silicon PNP Power Transistors 2SB707 2SB708 ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD568/569 APPLICATIONS ・For low frequency power amplifier low speed switching industrial use PINNING PIN DESCRIPTION 1

2SD2165

Abstract: NEC marking b
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING UNIT: mm for high hFE. This transistor is ideal for simplifying drive circuits and

2SD2161

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and

500ma 40v pnp

Abstract: 2SA1280
Contextual Info: Inchange Semiconductor Product Specification 2SA1280 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High breakdown voltage ·High power dissipation APPLICATIONS ·For use in low frequency power amplifier Color TV vertical deflection output

2SB1286

Abstract: 2SD1646
Contextual Info: SavantIC Semiconductor Product Specification 2SB1286 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD1646 ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier and power driver applications

2SA1280

Contextual Info: SavantIC Semiconductor Product Specification 2SA1280 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High breakdown voltage ·High power dissipation APPLICATIONS ·For use in low frequency power amplifier Color TV vertical deflection output

Contextual Info: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)

2N6053

Abstract: 2N6055 2N6054 2N6056
Contextual Info: ¿2&M0SPEC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP 2N6053 2 N6054 General-purpose power amplifier and low frequency switching applications NPN 2N6055 2N6056 FEATURES: * Low Collector-Emitter Saturation Voltage VCE SAT =2.0V(Max.)@lc=4.0A =3.0V(Max.)@lc=8.0A

2SB566

Abstract: 2SB566A
Contextual Info: JMnic Product Specification 2SB566 2SB566A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD476/476A APPLICATIONS ・For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION 1 Emitter

2SA1280

Contextual Info: JMnic Product Specification 2SA1280 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・High breakdown voltage ・High power dissipation APPLICATIONS ・For use in low frequency power amplifier Color TV vertical deflection output PINNING PIN

HN4C08J

Contextual Info: HN4C08J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C08J Unit: mm Low Frequency Power Amplifer Applications Power Switching Application z High DC Current Gain : hFE = 100~320 z Low Saturation Voltage : VCE(sat)=0.4V (Max.) : (IC = 500mA , IB = 20mA)

HN4A08J

Abstract: pnp amplifer
Contextual Info: HN4A08J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A08J Low Frequency Power Amplifer Applications Power Switching Application z z Unit: mm High DC Current Gain : hFE = 100~320 Low Saturation Voltage : VCE(sat)= −0.4V (Max.) : (IC = −500mA , IB = −20mA)