LOW FREQUENCY POWER TRANSISTOR Search Results

Contextual Info: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed

2SD560

Abstract: nec 2sd560 2sd560 equivalent NEC RELAY
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is

mqc505-902

Abstract: smd 78L05 mqc505 78L05 928 WN smd transistor Murata MQC505 mqc505 murata smd transistor 65D MQC505 Series SMD cf5
Contextual Info: Philips Semiconductors Application note Low power single/dual frequency synthesizers: UMA1017M/1018M/1019M AM /1020M(AM) AN95102 Author: P. Hugues UMA1018M and UMA1020M/UMA1020AM low power dual frequency synthesizers UMA1017M and UMA1019M/UMA1019AM low power single frequency synthesizers

Contextual Info: UTC 2SD468 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES *Low frequency power amplifier *Complement to 2SB562 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL  DESCRIPTION The UTC 2SB647 is a PNP epitaxial silicon transistor, which can be used as a low frequency power amplifier.  APPLICATION * Low frequency power amplifier

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL  DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier.  FEATURES * Low frequency power amplifier 

290A transistor

Abstract: 2SD667 transistor 2sd667
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL „ DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. „ FEATURES * Low frequency power amplifier * Halogen Free

2SD2400

Abstract: 2SB1569
Contextual Info: SavantIC Semiconductor Product Specification 2SD2400 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1569 ·High transition frequency ·Collector power dissipation: PC=20W TC=25 APPLICATIONS ·For low frequency power amplifier

2SB1569

Abstract: 2SD2400
Contextual Info: Inchange Semiconductor Product Specification 2SD2400 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1569 ・High transition frequency ・Collector power dissipation: PC=20W TC=25℃ APPLICATIONS ・For low frequency power amplifier

2SB1087

Contextual Info: Inchange Semiconductor Product Specification 2SB1087 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON APPLICATIONS ・For low frequency power amplifier and low speed power switching applications PINNING

2SC3944

Abstract: 2SC3944A 2SC394
Contextual Info: SavantIC Semiconductor Product Specification 2SC3944 2SC3944A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SA1535/1535A ·High transition frequency APPLICATIONS ·For low-frequency driver and high power amplification

2SD1763

Abstract: 2sd1763 equivalent 2SB1186 2sb1186 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SD1763 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High breakdown voltage VCEO ·Complement to type 2SB1186 ·High transition frequency APPLICATIONS ·For low frequency power amplifier applications

30A01SP

Abstract: ENN7512
Contextual Info: Ordering number : ENN7512 30A01SP PNP Epitaxial Planar Silicon Transistor 30A01SP Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions Low-frequency power amplifier, muting circuit. unit : mm 2033A Features 0.4 0.5 15.0

2SB1087

Abstract: TO-220C TO220C
Contextual Info: JMnic Product Specification 2SB1087 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC current gain ・DARLINGTON APPLICATIONS ・For low frequency power amplifier and low speed power switching applications PINNING PIN DESCRIPTION

2sc2275

Abstract: 2SC2275A
Contextual Info: SavantIC Semiconductor Product Specification 2SC2275 2SC2275A Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA985/985A ·High breakdown voltage APPLICATIONS ·For low frequency and high frequency power amplifer applicatons

2sc2275

Abstract: 2SC2275A
Contextual Info: JMnic Product Specification 2SC2275 2SC2275A Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA985/985A ・High breakdown voltage APPLICATIONS ・For low frequency and high frequency power amplifer applicatons PINNING

2SA985

Abstract: 2sc2275 2SA985A
Contextual Info: Inchange Semiconductor Product Specification 2SA985 2SA985A Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2275/2275A ·High breakdown voltage APPLICATIONS ·For low frequency and high frequency power amplifer applicatons

2SC3944

Abstract: 2SC3944A 2SA153 1535a
Contextual Info: Inchange Semiconductor Product Specification 2SC3944 2SC3944A Silicon NPN Power Transistors • DESCRIPTION ·With TO-220Fa package ·Complement to type 2SA1535/1535A ·High transition frequency APPLICATIONS ·For low-frequency driver and high power amplification

2SA985

Abstract: 2SA985A 2sc2275
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA985 2SA985A DESCRIPTION •With TO-220 package ·Complement to type 2SC2275/2275A ·High breakdown voltage APPLICATIONS ·For low frequency and high frequency power amplifer applicatons

2SA985

Abstract: 2sc2275 2SA985A
Contextual Info: JMnic Product Specification 2SA985 2SA985A Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2275/2275A ・High breakdown voltage APPLICATIONS ・For low frequency and high frequency power amplifer applicatons PINNING

2sc2275

Abstract: 2SC2275A
Contextual Info: Inchange Semiconductor Product Specification 2SC2275 2SC2275A Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA985/985A ・High breakdown voltage APPLICATIONS ・For low frequency and high frequency power amplifer applicatons

2SA1882

Abstract: 2SC4984 ITR04972 ITR04973 ITR04974
Contextual Info: Ordering number:ENN4633A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1882/2SC4984 Low-Frequency General-Purpose Amplifier Applications Applcations Package Dimensions • Low-frequency power amplifier applications. · Medium-speed switching. · Small-sized motor drivers.

Contextual Info: Ordering number : ENN7509 30A01C 30A01C PNP Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency power amplifier, muting circuit. unit : mm 2018B Features • • 0.4 0.5 •

2SA1683

Abstract: EN3012
Contextual Info: Ordering number:EN3012 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO>80V.