LOW FREQUENCY AMPLIFIER V 12V Search Results

C1668C

Abstract: Video Isolation Amplifier UPC1668C C1668 Isolation Amplifier NEC JAPAN
Contextual Info: HIGH ISOLATION SILICON MMIC IF AMPLIFIER UPC1668C UPC1668C ISOLATION AND GAIN vs. FREQUENCY FEATURES • HIGH ISOLATION 30 • LOW INPUT/OUTPUT RETURN LOSS VCC = 12V VCC = 10 V VCC = 8 V • LOW INTERMODULATION DISTORTION GAIN ISO -40 10 DESCRIPTION Isolation, (dB)

2SC900

Abstract: 2SC900 F
Contextual Info: Transistors 2SC900 USHA INDIA LTD LOW FREQUENCY, LOW NOISE AMPLIFIER • Collector-Base Voltage V Cb o =30V • Low Noise Level NL=50mV (Max) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit V cb O 30 25 5 50 250 150 -55-150 V V V mA

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC900 LOW FREQUENCY, LOW NOISE AMPLIFIER T O -92 • Col lector-Base Voltage V Cb o = 3 0 V • Low Noise Level NL=50m V Max ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Col lector-Base Voltage C ollector-E m itter Voltage

Contextual Info: KSC900 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY, LOW N O ISE AMPLIFIER • Collector-Base Voltage V Cbo = 3 0 V • Low Noise Level NL=50m V Max ABSO LU TE MAXIMUM RATINGS (TA« 2 5 t) Characteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage

hp50822811

Abstract: AD537 ad5374 AD537JD AD537JH AD537KD AD537S ad534 application
Contextual Info: a FEATURES Low Cost A-D Conversion Versatile Input Amplifier Positive or Negative Voltage Modes Negative Current Mode High Input Impedance, Low Drift Single Supply, 5 V to 36 V Linearity: ؎0.05% FS Low Power: 1.2 mA Quiescent Current Full-Scale Frequency up to 100 kHz

hp50822811

Abstract: AD537 AD537JD AD537JH AD537KD AD537S AD537J
Contextual Info: a FEATURES Low Cost A–D Conversion Versatile Input Amplifier Positive or Negative Voltage Modes Negative Current Mode High Input Impedance, Low Drift Single Supply, 5 V to 36 V Linearity: ؎0.05% FS Low Power: 1.2 mA Quiescent Current Full-Scale Frequency up to 100 kHz

Contextual Info: a FEATURES Low Cost A–D Conversion Versatile Input Amplifier Positive or Negative Voltage Modes Negative Current Mode High Input Impedance, Low Drift Single Supply, 5 V to 36 V Linearity: ؎0.05% FS Low Power: 1.2 mA Quiescent Current Full-Scale Frequency up to 100 kHz

Contextual Info: KSC1222 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY LOW NOISE AMPLIFIER • Col lector-Base Voltage: V Cb o = 5 0 V • Low Noise Level: N L=40mV Max ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage

Contextual Info: KSC1222 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY LOW NOISE AMPLIFIER • Collector-Base Voltage VCbo=50V • Low Noise Level NL=40m V Max ABSOLUTE MAXIMUM RATINGS (TA=25t:) Sym bol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

CSA1085

Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSA1085 TO-92 Plastic Package E CB Low Frequency and Low Noise Amplifier ABSOLUTE MAXIMUM RATINGS SYMBOL VCBO VCEO VALUE 120 120 UNITS V

5.9 GHz power amplifier

Abstract: TA053-059-22-10
Contextual Info: TA053-059-22-10 REV1_20040412 5.3 – 5.9 GHz Low Noise Amplifier FEATURES • P-1 dB: 10 dBm • Noise Figure: 1 dB • IP3: 20 dBm • Bias Condition: 90 mA @ 12 V • Small Signal Gain: 22 dB DESCRIPTION The TA053-059-22-10 is a low noise amplifier designed for applications in the 5.3 to 5.9 GHz frequency

2SA1083

Abstract: 2SA1083E 2SA1083D
Contextual Info: 2SA1083 -0.1 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 Low Frequency Amplifier G H Emitter Collector Base CLASSIFICATION OF hFE

2SA1081

Contextual Info: 2SA1081 -0.1 A, -90 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 Low Frequency Amplifier G H Emitter Collector Base CLASSIFICATION OF hFE

2SA1082

Contextual Info: 2SA1082 -0.1 A , -120 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 Low Frequency Amplifier G H Emitter Collector Base CLASSIFICATION OF hFE

Contextual Info: ^ JCcOnM U EHH PO N EN TS AP-fl n c 7 A b 1 130 / 10/00 0.3 TO 1000 MHz JO-8 CASCADABLE AMPLIFIER AC1057 T yp ic a l V alues Low Frequency. Medium Output L e v e l. High Performance Thin Film Standard Size TO-8 Package AC1057

289k

Abstract: 289J Model 289J AC1214 Isolation Amplifier theory on Isolation Amplifier 289L
Contextual Info: □ ANALOG DEVICES Precision, Wide Bandwidth, Synchronized Isolation Amplifier MODEL 289 FEATURES Low Nonlinearity: ±0.012% max 289L Frequency Response: (-3dB) dc to 20kHz (Full Power) dc to 5kHz Gain Adjustable 1 to 100V/V, Single Resistor 3-Port Isolation: ±2500V CMV Isolation Input/Output

2SA1032

Abstract: 2SA1031 2SC2310 2sC2310 y
Contextual Info: HITACHI 2SA1031, 2SA1032 SILICON PNP EPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER Complementary pair with 2SC458 LG and 2SC2310 riW « i Q.WUuJ § «.»My p 1, Emiiier . it * . ar 2. i Colica« J. B»ït (Dimensioni in mm) I èp h Vi 5i V I —J ji ? (JEDEC TO-92)

FMMT918

Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
Contextual Info: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid

Contextual Info: TGA8061-SCC Low-Noise Amplifier 100-MHz to 3.5-GHz Frequency Range 3-dB Bandwidth Exceeds 5 Octaves 2.4-dB Noise Figure with Low Input and Output SWR 18-dB Gain 15-dBm Output Power at 1-dB Gain Compression Operates from Single 12 V Supply 1,524 x 1,524 x 0,102 mm 0.060 x 0.060 x 0.004 in.

2SC177S

Abstract: 2SCI775
Contextual Info: HITACHI 2 S C 1 7 7 5 , 2 S C 1 7 7 5 A SILICON NPN EPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER Comptomsnlary pair with 2SA872.>’A * hwx7 v/r-': l-/f > fette . * ^ D in e .*- t ie r s in r w . i -t (JEDE C TO-92 I ABSOLUTE MAXIMUM RATINGS (T .^ ?JX )

289J

Abstract: ac1214 289k 289L LM310 strain ground loop isolator ad590 mtbf 273j LM310 ac voltage regulator using SCR circuit diagram 15v output
Contextual Info: analog devices INC 5 IE AN ALO G D E V IC E S » • OfllbflOO 0037311 b70 ■ ANA Precision, Wide Bandwidh, Synchronized Isolation Amplifier -T-75-3ST 289 FEATURES Low Nonlinearity: ±0.012% max 289L Frequency Response: (-3dB) dc to 20kHz (Full Power) dc to 5kHz

2SC5629

Abstract: Hitachi DSA0014
Contextual Info: 2SC5629 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-980 Z 1st. Edition Nov. 2000 Features • Super compact package; (1.6 x 0.8 × 0.7mm) • High power gain and low noise figure; (PG = 9 dB typ., NF = 1.1 dB typ., at f = 900Mhz, VCE = 1 V)

2SC5628

Abstract: ADE-208-979 Hitachi DSA0014
Contextual Info: 2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-979 Z 1st. Edition Nov. 2000 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V)

ZO 607 MA

Abstract: 2SC5629 DSA003645
Contextual Info: 2SC5629 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-980 Z 1st. Edition Nov. 2000 Features • Super compact package; (1.6 x 0.8 × 0.7mm) • High power gain and low noise figure; (PG = 9 dB typ., NF = 1.1 dB typ., at f = 900MHz, VCE = 1 V)