LOW FREQUENCY AMPLIFIER V 12V Search Results

C1668C

Abstract: Video Isolation Amplifier UPC1668C C1668 Isolation Amplifier NEC JAPAN
Contextual Info: HIGH ISOLATION SILICON MMIC IF AMPLIFIER UPC1668C UPC1668C ISOLATION AND GAIN vs. FREQUENCY FEATURES • HIGH ISOLATION 30 • LOW INPUT/OUTPUT RETURN LOSS VCC = 12V VCC = 10 V VCC = 8 V • LOW INTERMODULATION DISTORTION GAIN ISO -40 10 DESCRIPTION Isolation, (dB)

2SC900

Abstract: 2SC900 F
Contextual Info: Transistors 2SC900 USHA INDIA LTD LOW FREQUENCY, LOW NOISE AMPLIFIER • Collector-Base Voltage V Cb o =30V • Low Noise Level NL=50mV (Max) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit V cb O 30 25 5 50 250 150 -55-150 V V V mA

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC900 LOW FREQUENCY, LOW NOISE AMPLIFIER T O -92 • Col lector-Base Voltage V Cb o = 3 0 V • Low Noise Level NL=50m V Max ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Col lector-Base Voltage C ollector-E m itter Voltage

hp50822811

Abstract: AD537 ad5374 AD537JD AD537JH AD537KD AD537S ad534 application
Contextual Info: a FEATURES Low Cost A-D Conversion Versatile Input Amplifier Positive or Negative Voltage Modes Negative Current Mode High Input Impedance, Low Drift Single Supply, 5 V to 36 V Linearity: ؎0.05% FS Low Power: 1.2 mA Quiescent Current Full-Scale Frequency up to 100 kHz

hp50822811

Abstract: AD537 AD537JD AD537JH AD537KD AD537S AD537J
Contextual Info: a FEATURES Low Cost A–D Conversion Versatile Input Amplifier Positive or Negative Voltage Modes Negative Current Mode High Input Impedance, Low Drift Single Supply, 5 V to 36 V Linearity: ؎0.05% FS Low Power: 1.2 mA Quiescent Current Full-Scale Frequency up to 100 kHz

Contextual Info: a FEATURES Low Cost A–D Conversion Versatile Input Amplifier Positive or Negative Voltage Modes Negative Current Mode High Input Impedance, Low Drift Single Supply, 5 V to 36 V Linearity: ؎0.05% FS Low Power: 1.2 mA Quiescent Current Full-Scale Frequency up to 100 kHz

Contextual Info: KSC1222 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY LOW NOISE AMPLIFIER • Col lector-Base Voltage: V Cb o = 5 0 V • Low Noise Level: N L=40mV Max ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage

2SA1083

Abstract: 2SA1083E 2SA1083D
Contextual Info: 2SA1083 -0.1 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 Low Frequency Amplifier G H Emitter Collector Base CLASSIFICATION OF hFE

2SA1081

Contextual Info: 2SA1081 -0.1 A, -90 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 Low Frequency Amplifier G H Emitter Collector Base CLASSIFICATION OF hFE

2SA1082

Contextual Info: 2SA1082 -0.1 A , -120 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 Low Frequency Amplifier G H Emitter Collector Base CLASSIFICATION OF hFE

2SA1084

Abstract: 2sa1084 datasheet 2SA1084E
Contextual Info: 2SA1084 -0.1 A, -90 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 Low Frequency Amplifier G H Emitter Collector Base CLASSIFICATION OF hFE

289k

Abstract: 289J Model 289J AC1214 Isolation Amplifier theory on Isolation Amplifier 289L
Contextual Info: □ ANALOG DEVICES Precision, Wide Bandwidth, Synchronized Isolation Amplifier MODEL 289 FEATURES Low Nonlinearity: ±0.012% max 289L Frequency Response: (-3dB) dc to 20kHz (Full Power) dc to 5kHz Gain Adjustable 1 to 100V/V, Single Resistor 3-Port Isolation: ±2500V CMV Isolation Input/Output

2SA1032

Abstract: 2SA1031 2SC2310 2sC2310 y
Contextual Info: HITACHI 2SA1031, 2SA1032 SILICON PNP EPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER Complementary pair with 2SC458 LG and 2SC2310 riW « i Q.WUuJ § «.»My p 1, Emiiier . it * . ar 2. i Colica« J. B»ït (Dimensioni in mm) I èp h Vi 5i V I —J ji ? (JEDEC TO-92)

FMMT918

Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
Contextual Info: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid

2SC177S

Abstract: 2SCI775
Contextual Info: HITACHI 2 S C 1 7 7 5 , 2 S C 1 7 7 5 A SILICON NPN EPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER Comptomsnlary pair with 2SA872.>’A * hwx7 v/r-': l-/f > fette . * ^ D in e .*- t ie r s in r w . i -t (JEDE C TO-92 I ABSOLUTE MAXIMUM RATINGS (T .^ ?JX )

289J

Abstract: ac1214 289k 289L LM310 strain ground loop isolator ad590 mtbf 273j LM310 ac voltage regulator using SCR circuit diagram 15v output
Contextual Info: analog devices INC 5 IE AN ALO G D E V IC E S » • OfllbflOO 0037311 b70 ■ ANA Precision, Wide Bandwidh, Synchronized Isolation Amplifier -T-75-3ST 289 FEATURES Low Nonlinearity: ±0.012% max 289L Frequency Response: (-3dB) dc to 20kHz (Full Power) dc to 5kHz

2SC5629

Abstract: Hitachi DSA0014
Contextual Info: 2SC5629 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-980 Z 1st. Edition Nov. 2000 Features • Super compact package; (1.6 x 0.8 × 0.7mm) • High power gain and low noise figure; (PG = 9 dB typ., NF = 1.1 dB typ., at f = 900Mhz, VCE = 1 V)

2SC5628

Abstract: ADE-208-979 Hitachi DSA0014
Contextual Info: 2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-979 Z 1st. Edition Nov. 2000 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V)

Contextual Info: A V A N T Ë K MME IN C D B i m n b h 0 0 0 0 1 1 3 3 E 3 A V A UTO/UTC 2302 Series Thln-Film Cascadable Amplifier 1700 to 2300 MHz FEATURES APPLICATIONS • Frequency Range: 1700 to 2300 MHz • Medium Gain: 10.5 dB Typ • Low VSWR • Temperature Compensated

Contextual Info: 2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0750-0300 Previous ADE-208-979A Rev.3.00 Aug.10.2005 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 MHz, VCE = 1 V)

Contextual Info: HITACHI 2 S A 1 0 5 2 SILICON PNP EPITAXIAL LOW FREQUENCY AMPLIFIER iS ìM S jO L 55. ja 2 ¡S 'V , L. EmiiKT 2. Ba*c 3. Collector DinxrnioTA in mm (MPAK) MAXIMUM COLLECTOR DISSIPATION CURVE I ABSOLUTE MAXIMUM RATINGS (Ta=25“C) Item 2SA1052 ! Symbol Unit

LOPA

Abstract: 2SC2462
Contextual Info: HITACHI 2SC2462 — SILICON NPN EPITAXIAL LOW FREQUENCY AMPLIFIER Oi-Ì iE ' i— I ?!Í; ' ¡ Im« - á r<v| I i -7 Î iQ 5ï J.C>3S. [ — i* - 1. Entier 2. Bn<e Ï - ï Collector Ù im iftiiw is in inni \0_ D C l (MPAK ) I ASSOLUTE MAXIMUM RATINGS (Ta=25cQ

IC LM 1246

Contextual Info: AVANTÊK INC 44e m d Qß&fAMTWsK . i m n . b ' f e . 0 7 3 b s a v a UTO/UTC1502 Series Thin-Filrn Cascadable Amplifier 5 to 1500 MHz - T " iü; -.3, -os FEATURES APPLICATIONS • Frequency Range: 5 to 1500 MHz • Medium Gain: 10.5 dB Typ • Low VSWR • IF/RF Amplification

2SC1344

Abstract: 2SC1345 J344 J200 Hitachi 2SC1344 2SCI344 2SCI345
Contextual Info: HITACHI 2 S C 1 3 4 4 , 2 S C 1 3 4 5 SILICON NPN ÉPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER 5t u t Í'.N! 11 : JEDEC TO-92 • ASSOLUTE MAXIMUM RATINGS Ilern S ym b o l MAXIMUM COLLECTOR DISSIPATION (T a ~ 2 5 °C ) 2 S C I3 4 4 2 S C I3 4 Î U n ii C u llc c io r io Ix iic v o lia te