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    LOW DARK CURRENT APD Search Results

    LOW DARK CURRENT APD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPL226R0G5D
    Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose PDF
    NFMJMPC156R0G3D
    Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose PDF
    NFM31PC276D0E3L
    Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose PDF
    UDS2983R/B
    Rochester Electronics LLC UDS2983 - High Voltage, High Current Source Driver PDF Buy
    UDS2981R/B
    Rochester Electronics LLC UDS2981 - High Voltage, High Current Source Driver PDF Buy

    LOW DARK CURRENT APD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    low dark current APD

    Abstract: APD-02001 ding APD-02002 APD-02106 APD-02107 APD-02108 APD-02109
    Contextual Info: GaAs PIN PD Module APD-020XX/APD-021XX „ Features a. Low Dark Current b. High Reliability „ Applications a. Digital Fiber Optical Transmission System b. Optical Test and Measurement „ Absolute Maximum Ratings Parameter Symbol Min. Max. Unit Reverse Voltage


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    APD-020XX/APD-021XX APD-02001 APD-02002 APD-02106 APD-02107 APD-02108 APD-02109 low dark current APD ding APD-02002 APD-02106 APD-02107 APD-02108 APD-02109 PDF

    low dark current APD

    Abstract: avalanche photodiodes J16A
    Contextual Info: Judson Technologies J16A SERIES GE AVALANCHE PHOTODIODES PB 3305 October 2000 Operating Instructions FEATURES: • 100 MICRON DIAMETER ACTIVE AREA • LOW DARK CURRENT • LOW CAPACITANCE • OFFERS IMPROVED SENSITIVITY OVER PIN DIODES • WIDE BANDWIDTH • RUGGED COAXIAL


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    PDF

    SSO-AD-500-TO52i

    Contextual Info: SSO-AD-500-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR


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    SSO-AD-500-TO52i SSO-AD-500-TO52i PDF

    Contextual Info: SSO-AD-1100-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 1130 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA)


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    SSO-AD-1100-TO5i 1130m PDF

    C30644E

    Abstract: InGaAs apd photodiode C30645 rca 536 C30644 C30644ECER C30645E C30645ECER C30645EQC fiber optic monomode
    Contextual Info: IDE » 1 740Mb7S 00000^7 3 ^ C A INC/ ELECTRO OPTICS u w Planar InGaAs APD C30644, C30645 DATA i w Spectral response range 1100 to 1700 nm • High responsivity ■ Low capacitance ■ Fast response time ■ Low dark current and noise ■ Available in a variety of convenient packages


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    C30644, C30645 C30644 C30645 C30644E. ED-0025/08/88 C30644E InGaAs apd photodiode rca 536 C30644ECER C30645E C30645ECER C30645EQC fiber optic monomode PDF

    EMCORE APD

    Abstract: avalanche photodiode photodiode Avalanche photodiode APD photodiode 25G 2.5G APD APD 1550 nm bare die avalanche Photodiode 300 nm avalanche photodiode oc48 1550 fiber 2.5 bare die receiver avalanche 1550 fiber 2.5
    Contextual Info: PRELIMINARY DATASHEET | DECEMBER 30, 2005 2.5 Gb/s Avalanche Photodiode Bare Die The 2.5 Gb/s avalanche photodiode device features high responsivity, low dark current, and facilitates designs that can achieve -34 dBm receiver sensitivity. Target applications include SONET OC-48, SDH


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    OC-48, STM-16, OC-48 STM-16 EMCORE APD avalanche photodiode photodiode Avalanche photodiode APD photodiode 25G 2.5G APD APD 1550 nm bare die avalanche Photodiode 300 nm avalanche photodiode oc48 1550 fiber 2.5 bare die receiver avalanche 1550 fiber 2.5 PDF

    C30902EH

    Contextual Info: Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits Excelitas’ C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This


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    C30902 C30902EH C30921EH DTS0408 PDF

    Infrared detectors

    Abstract: dark detector application ,uses and working
    Contextual Info: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use


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    Si apd photodiode

    Abstract: Optical Detector
    Contextual Info: HR8203KG Preliminary Si APD Description The HR8203KG is a Si avalanche photodiode which responds to a 0.6 to 0.9 pm band. It is suitable as an optical detector for optical fiber communication systems. Features • • • • Package Type • HR8203KG: KG


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    HR8203KG HR8203KG HR8203KG: Si apd photodiode Optical Detector PDF

    Contextual Info: Ge Avalanche Photodiodes Spectral Response 0.8 to 1.7 fj. m Highly Sensitive Photodiodes with Internal Gain Mechanism Ge avalanche photodiodes APD detect and amplify low level light by means of avalanche effects that take place when a reverse bias is applied.


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    KIRDB0030EA KIRDB0029EA B2834-01 B2834 KIRDB0034EA PDF

    1NA101

    Abstract: S8890 APD S11519
    Contextual Info: IR-enhanced Si APD S11519 series Enhanced near IR sensitivity, using a MEMS technology HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11519 series are a family of Si APDs with improved sensitivity in the near infrared region.


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    S11519 S8890 SE-171 KAPD1028E01 1NA101 APD S11519 PDF

    photodiode 1.0 Gbps 1.55

    Contextual Info: PHOTODIODE InGaAs APD with preamp G10519-14 ROSA, 1.3/1.55 µm, 2.7 Gbps Features Applications l High-speed response: 2.7 Gbps l High sensitivity: 27 mV/µW λ=1.55 µm, M=10 l Differential output l Wide dynamic range: -5 to -33 dBm l Optical return loss: 35 dB


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    G10519-14 STM-16 SE-171 KAPD1021E03 photodiode 1.0 Gbps 1.55 PDF

    Photodiode alcatel apd

    Abstract: optical fiber Alcatel idm25 optical fiber G.653 G.652 photodiode Avalanche photodiode APD FOR POWER G APD 1550 nm photodetector
    Contextual Info: Alcatel 1914 DMC Lens cap TO CAN Coaxial Module 2.5 Gbit/s APD Detector Description Applications Designed to provide high optical performance for ITU-T G.652 standard optical fiber and ITU-T G.653 shifted dispersion fiber, the Alcatel 1914 DMC consists of a reliable III-V APD


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    F-91625 Photodiode alcatel apd optical fiber Alcatel idm25 optical fiber G.653 G.652 photodiode Avalanche photodiode APD FOR POWER G APD 1550 nm photodetector PDF

    Contextual Info: Detectors Silicon Avalanche Photodiode SAR1500x/3000x Description The SAR1500/3000x is based on a “reach-through” structure for excellent quantum efficiency and high speed. TO-5 and TO-8 package options are available. These APDs are also available in a hermetically sealed TO-37 with thermoelectrical


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    SAR1500x/3000x SAR1500/3000x lcd/sar1500-3000x PDF

    G.653

    Abstract: optical fiber G.652 Alcatel of G.653 Photodiode alcatel apd optical fiber G.653 g.653 fiber APD 1550 nm photodetector APD 1310 detector Photodiode alcatel alcatel photodiode apd
    Contextual Info: Alcatel 1954 DMC Pigtailed Coaxial Module 2.5 Gbit/s APD Detector Description Applications Designed to provide high optical performance for ITU-T G.652 standard optical fiber and ITU-T G.653 shifted dispersion fiber, the Alcatel 1954 DMC consists of a reliable III-V APD


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    S0014

    Abstract: 415 nm 100 mw APD 1300 2,5 GHz
    Contextual Info: HR1201TG/CX/FR InGaAs APD Description The HR1201TG/CX/FR are InGaAs avalanche photodiodes which respond to a 1.0 pm to 1.65 im. Their fast pulse response makes them suitable as optical detectors for high-bit-rate optical fiber communication systems. Features


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    HR1201TG/CX/FR HR1201TG/CX/FR HR1201FR) diam5-1835 100uA DD144bb S0014 415 nm 100 mw APD 1300 2,5 GHz PDF

    Contextual Info: DATASHEET Photon Detection C30739ECERH Series Short Wavelength Enhanced Silicon Avalanche Photodiode Key Features The C30739ECERH large area silicon avalanche photodiode APD is intended for use in a wide variety of broadband low light level applications covering the spectral range from below 400 to over 700 nm.


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    C30739ECERH PDF

    photodiode 1.0 Gbps 1.55

    Contextual Info: Devlp. PHOTODIODE InGaAs APD with preamp G10204-54 ROSA, 1.3/1.55 µm, 10.7 Gbps Features Applications l Compatible with XMD 10 Gbps Miniature Device -MSA l High-speed response: 10 Gbps l Low power supply voltage: Vcc=3.3 V, VBR=30 V l Differential output


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    G10204-54 SE-171 KAPD1017E01 photodiode 1.0 Gbps 1.55 PDF

    APD 1550 nm

    Abstract: jdsu apd datasheet apd 1550 APD Semiconductor jdsu avalanche photodiode APD for fiber test Avalanche photodiode APD Photodiode apd avalanche photodiode jdsu avalanche photodiode
    Contextual Info: COMMUNICATIONS COMPONENTS 2.5 Gb/s Front-Illuminated APD Chip Key Features • Front illuminated device for ease of assembly, with 53 micron diameter active region • -40 to 85 °C operating temperature range • -33 dBm typical sensitivity TIA dependent


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    OC-48 GR-468-CORE 498-JDSU 1-800-498-JDSU 800-5378-JDSU 5378-JDSU APD 1550 nm jdsu apd datasheet apd 1550 APD Semiconductor jdsu avalanche photodiode APD for fiber test Avalanche photodiode APD Photodiode apd avalanche photodiode jdsu avalanche photodiode PDF

    Contextual Info: PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l Low-light-level measurement l Analytical equipment l High sensitivity at visible range l Low noise l High gain l Low capacitance • General ratings / Absolute maximum ratings


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    S8664 S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55 SE-171 KAPD1012E03 PDF

    KAPDA0036EA

    Contextual Info: PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l Low-light-level measurement l Analytical equipment l High sensitivity at visible range l Low noise l High gain l Low capacitance • General ratings / Absolute maximum ratings


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    S8664 S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55 S8664-1010 SE-171 KAPDA0036EA PDF

    S8890

    Abstract: S8890-02 S8890-05 S8890-10
    Contextual Info: PHOTODIODE Si APD S8890 series Long wavelength type APD Features Applications l High sensitivity l High gain l Low terminal capacitance l YAG laser detection l Long wavelength light detection • General ratings / Absolute maximum ratings Type No. Dimensional


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    S8890 S8890-02 S8890-05 S8890-10 S8890-15 S8890-30 SE-171 KAPD1010E01 S8890-02 S8890-05 S8890-10 PDF

    Contextual Info: PHOTODIODE Si APD S8890 series Long wavelength type APD Features Applications l High sensitivity l High gain l Low terminal capacitance l YAG laser detection l Long wavelength light detection • General ratings / Absolute maximum ratings Type No. Dimensional


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    S8890 S8890-02 S8890-05 S8890-10 S8890-15 S8890-30 SE-171 KAPD1010E01 PDF

    Contextual Info: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings


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    S2381 S2385, S5139, S8611, S3884 S2382 S5139 S8611 S2383 PDF