LOW DARK CURRENT APD Search Results
LOW DARK CURRENT APD Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| NFMJMPL226R0G5D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
| NFMJMPC156R0G3D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
| NFM31PC276D0E3L | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
| UDS2983R/B |
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UDS2983 - High Voltage, High Current Source Driver |
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| UDS2981R/B |
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UDS2981 - High Voltage, High Current Source Driver |
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LOW DARK CURRENT APD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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low dark current APD
Abstract: APD-02001 ding APD-02002 APD-02106 APD-02107 APD-02108 APD-02109
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APD-020XX/APD-021XX APD-02001 APD-02002 APD-02106 APD-02107 APD-02108 APD-02109 low dark current APD ding APD-02002 APD-02106 APD-02107 APD-02108 APD-02109 | |
low dark current APD
Abstract: avalanche photodiodes J16A
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SSO-AD-500-TO52iContextual Info: SSO-AD-500-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR |
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SSO-AD-500-TO52i SSO-AD-500-TO52i | |
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Contextual Info: SSO-AD-1100-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 1130 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA) |
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SSO-AD-1100-TO5i 1130m | |
C30644E
Abstract: InGaAs apd photodiode C30645 rca 536 C30644 C30644ECER C30645E C30645ECER C30645EQC fiber optic monomode
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C30644, C30645 C30644 C30645 C30644E. ED-0025/08/88 C30644E InGaAs apd photodiode rca 536 C30644ECER C30645E C30645ECER C30645EQC fiber optic monomode | |
EMCORE APD
Abstract: avalanche photodiode photodiode Avalanche photodiode APD photodiode 25G 2.5G APD APD 1550 nm bare die avalanche Photodiode 300 nm avalanche photodiode oc48 1550 fiber 2.5 bare die receiver avalanche 1550 fiber 2.5
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OC-48, STM-16, OC-48 STM-16 EMCORE APD avalanche photodiode photodiode Avalanche photodiode APD photodiode 25G 2.5G APD APD 1550 nm bare die avalanche Photodiode 300 nm avalanche photodiode oc48 1550 fiber 2.5 bare die receiver avalanche 1550 fiber 2.5 | |
C30902EHContextual Info: Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits Excelitas’ C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This |
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C30902 C30902EH C30921EH DTS0408 | |
Infrared detectors
Abstract: dark detector application ,uses and working
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Si apd photodiode
Abstract: Optical Detector
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HR8203KG HR8203KG HR8203KG: Si apd photodiode Optical Detector | |
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Contextual Info: Ge Avalanche Photodiodes Spectral Response 0.8 to 1.7 fj. m Highly Sensitive Photodiodes with Internal Gain Mechanism Ge avalanche photodiodes APD detect and amplify low level light by means of avalanche effects that take place when a reverse bias is applied. |
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KIRDB0030EA KIRDB0029EA B2834-01 B2834 KIRDB0034EA | |
1NA101
Abstract: S8890 APD S11519
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S11519 S8890 SE-171 KAPD1028E01 1NA101 APD S11519 | |
photodiode 1.0 Gbps 1.55Contextual Info: PHOTODIODE InGaAs APD with preamp G10519-14 ROSA, 1.3/1.55 µm, 2.7 Gbps Features Applications l High-speed response: 2.7 Gbps l High sensitivity: 27 mV/µW λ=1.55 µm, M=10 l Differential output l Wide dynamic range: -5 to -33 dBm l Optical return loss: 35 dB |
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G10519-14 STM-16 SE-171 KAPD1021E03 photodiode 1.0 Gbps 1.55 | |
Photodiode alcatel apd
Abstract: optical fiber Alcatel idm25 optical fiber G.653 G.652 photodiode Avalanche photodiode APD FOR POWER G APD 1550 nm photodetector
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F-91625 Photodiode alcatel apd optical fiber Alcatel idm25 optical fiber G.653 G.652 photodiode Avalanche photodiode APD FOR POWER G APD 1550 nm photodetector | |
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Contextual Info: Detectors Silicon Avalanche Photodiode SAR1500x/3000x Description The SAR1500/3000x is based on a “reach-through” structure for excellent quantum efficiency and high speed. TO-5 and TO-8 package options are available. These APDs are also available in a hermetically sealed TO-37 with thermoelectrical |
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SAR1500x/3000x SAR1500/3000x lcd/sar1500-3000x | |
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G.653
Abstract: optical fiber G.652 Alcatel of G.653 Photodiode alcatel apd optical fiber G.653 g.653 fiber APD 1550 nm photodetector APD 1310 detector Photodiode alcatel alcatel photodiode apd
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S0014
Abstract: 415 nm 100 mw APD 1300 2,5 GHz
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HR1201TG/CX/FR HR1201TG/CX/FR HR1201FR) diam5-1835 100uA DD144bb S0014 415 nm 100 mw APD 1300 2,5 GHz | |
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Contextual Info: DATASHEET Photon Detection C30739ECERH Series Short Wavelength Enhanced Silicon Avalanche Photodiode Key Features The C30739ECERH large area silicon avalanche photodiode APD is intended for use in a wide variety of broadband low light level applications covering the spectral range from below 400 to over 700 nm. |
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C30739ECERH | |
photodiode 1.0 Gbps 1.55Contextual Info: Devlp. PHOTODIODE InGaAs APD with preamp G10204-54 ROSA, 1.3/1.55 µm, 10.7 Gbps Features Applications l Compatible with XMD 10 Gbps Miniature Device -MSA l High-speed response: 10 Gbps l Low power supply voltage: Vcc=3.3 V, VBR=30 V l Differential output |
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G10204-54 SE-171 KAPD1017E01 photodiode 1.0 Gbps 1.55 | |
APD 1550 nm
Abstract: jdsu apd datasheet apd 1550 APD Semiconductor jdsu avalanche photodiode APD for fiber test Avalanche photodiode APD Photodiode apd avalanche photodiode jdsu avalanche photodiode
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OC-48 GR-468-CORE 498-JDSU 1-800-498-JDSU 800-5378-JDSU 5378-JDSU APD 1550 nm jdsu apd datasheet apd 1550 APD Semiconductor jdsu avalanche photodiode APD for fiber test Avalanche photodiode APD Photodiode apd avalanche photodiode jdsu avalanche photodiode | |
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Contextual Info: PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l Low-light-level measurement l Analytical equipment l High sensitivity at visible range l Low noise l High gain l Low capacitance • General ratings / Absolute maximum ratings |
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S8664 S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55 SE-171 KAPD1012E03 | |
KAPDA0036EAContextual Info: PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l Low-light-level measurement l Analytical equipment l High sensitivity at visible range l Low noise l High gain l Low capacitance • General ratings / Absolute maximum ratings |
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S8664 S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55 S8664-1010 SE-171 KAPDA0036EA | |
S8890
Abstract: S8890-02 S8890-05 S8890-10
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S8890 S8890-02 S8890-05 S8890-10 S8890-15 S8890-30 SE-171 KAPD1010E01 S8890-02 S8890-05 S8890-10 | |
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Contextual Info: PHOTODIODE Si APD S8890 series Long wavelength type APD Features Applications l High sensitivity l High gain l Low terminal capacitance l YAG laser detection l Long wavelength light detection • General ratings / Absolute maximum ratings Type No. Dimensional |
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S8890 S8890-02 S8890-05 S8890-10 S8890-15 S8890-30 SE-171 KAPD1010E01 | |
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Contextual Info: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings |
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S2381 S2385, S5139, S8611, S3884 S2382 S5139 S8611 S2383 | |