LOW COLLECTOR-EMITTER SATURATION VOLTAGE Search Results

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2500 MEDIUM POWER AMPLIFIER LOW SATURATION ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)

Contextual Info: KSD1221 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Low Collector Emitter Saturation Voltage • Complement to KSB906 I-PACK ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage

Contextual Info: KSD1406 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220F • Low Collector Emitter Saturation Voltage • Complement to KSB1015 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage

Contextual Info: KSD1406 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Low Collector Emitter Saturation Voltage • Complement to KSB1015 TO-220F ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage

KSE200

Abstract: KSE210 kse21
Contextual Info: KSE210 PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65 IC= -100 Complement to KSE200 ˆ{ TO-126 ~ ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage

FJC1386

Abstract: FJC2098
Contextual Info: FJC1386 FJC1386 Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

FJC1386

Abstract: FJC2098
Contextual Info: FJC1386 FJC1386 Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: FJC1386 FJC1386 Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: KSC5047 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT GAIN LOW COLLECTO R EMITTER SATURATION VOLTAGE ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Symbol Rating

Contextual Info: KSA1241 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low Collector Emitter Saturation Vfoltage • Complement to KSC3076 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol J Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC5019 LOW SATURATION • VCE sat =0.5V (lc=2A, lB=50mA) ABSOLUTE MAXIMUM RATINGS (TA=25t:) Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)

Contextual Info: Product specification 2SA1745 Features Very small-sized package. Low collector-to-emitter saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -20 V Collector-emitter voltage

Contextual Info: FJC1386 PNP Epitaxial Silicon Transistor Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 8 6 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

FJC1386

Abstract: FJC2098 SOT89 transistor marking 4A
Contextual Info: FJC1386 PNP Epitaxial Silicon Transistor Low Saturation Transistor Medium Power Amplifier • Complement to FJC2098 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 8 6 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter

Contextual Info: SMD Type Product specification 2SA1980UF Features Low collector saturation voltage. Low output capacitance. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -50 V Collector-emitter voltage

Contextual Info: Transistors IC SMD Type Product specification 2SD1820 Features Low collector-emitter saturation voltage VCE sat . 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage

Contextual Info: Transistors IC SMD Type Product specification 2SD1820A Features Low collector-emitter saturation voltage VCE sat . 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage

KSC5019

Contextual Info: KSC5019 NPN EPITAXIAL SILICON TRANSISTOR LOW SATURATION • VCE sat =0.5V (IC=2A, IB=50mA) TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)

Contextual Info: Transistors SMD Type Product specification 2SD2459 Features High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE sat . Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO 150 V Collector to emitter voltage

Contextual Info: KSE210 PNP EPITAXIAL SILICO N TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65ffiz @ lc= -IOO1A TO-126 Complement to K SE200 A BSO LU TE MAXIMUM RATINGS Rating

transistor SOT23 4d

Abstract: MMBTA94L MMBTA94 MMBTA94-AE3-R MMBTA94L-AE3-R MMBTA94G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PC MAX =350mW * Low collector-Emitter saturation voltage „ APPLICATIONS * Telephone switching

Contextual Info: KSD1406 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Low Collector Emitter Saturation Voltage • Complement to KSB1015 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector Base Voltage VcBO 60 V Collector Emitter Voltage

transistor SOT23 4d

Abstract: MMBTA94L MMBTA94L-AE3-R MMBTA94 MMBTA94-AE3-R marking 4d
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ FEATURES * Collector-Emitter Voltage: VCEO=-400V * Collector Dissipation: PC MAX =350mW * Low Collector-Emitter Saturation Voltage „ APPLICATIONS * Telephone Switching

Contextual Info: KSP94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • High Collector-Emitter Voltage: VCEo = - 400V • Low Collector-Emltter Saturation Voltage • Complement to MPSA44 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage