LOT CODE NE NEC Search Results

Contextual Info: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic

Contextual Info: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features Optimum Technology Matching Applied • VCC InGaP HBT N/C VBIAS SiGe BiCMOS Active Bias

Contextual Info: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied GaAs HBT VCC GaAs MESFET N/C InGaP HBT

AT880

Abstract: lot code RFMD
Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied • VC1 DE VBIAS Active Bias

Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic

lot code RFMD

Abstract: ECB-101161
Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features Optimum Technology Matching Applied • VC1 VBIAS Active Bias SiGe BiCMOS GaAs pHEMT

transistor 1p3

Abstract: SXA3318B SXA3318BZ sirenza rfmd AH03L MCH18 SXA-3318B TAJB104KLRH TAJB106K020R L350
Contextual Info: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features Optimum Technology

transistor 1p3

Contextual Info: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features RFMD’a SXA-3318B amplifier is a high efficiency GaAs Heterojunction

Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT

an 214 amp schematic diagram

Abstract: ROHM MCR03 ECB-101161
Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features GaAs MESFET      InGaP HBT VC1 Si BiCMOS VBIAS SiGe HBT GaAs pHEMT RFIN Si CMOS Si BJT

ECB-101161

Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features  High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel

Contextual Info: DIE PRODUCTS BURR-BROWN* HI-508 DIE 1 E Single-Ended 8-Channel CMOS ANALOG MULTIPLEXER DIE FEATURES DESCRIPTION • ANALOG OVERVOLTAGE PROTECTION: 70Vp-p • NO CHANNEL INTERACTION DURING OVERVOLTAGE • ESD RESISTANT • BREAK-BEFORE-MAKE SWITCHING • ANALOG SIGNAL RANGE: ±15V

MC 3041 opto

Abstract: 4N47A 548D 4N48U JANTXV 4N49 JANTXJANTXV 4N49U JANTX JANTXV 3041 OPTO 4N49 opto 4N47U JANTX federal isolator
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. MIL-PRF-19500/548D 8 June 2001 SUPERSEDING MIL-PRF-19500/548C 10 October 1997 PERFORMANCE SPECIFICATION COUPLER, OPTO ELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE

RX2056

Contextual Info: RX2056 916.5 MHz ASH Receiver Ideal for 916.5 MHz, 3 V Data Receivers in the USA and Canada Passive Design with No RF Oscillation Use with HX2000for 19.2 kbps Data Rate Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint

hs82c54

Contextual Info: HS-82C85RH HARRIS S E M I C O N D U C T O R Radiation Hardened CMOS Static Clock Controller/Generator A ug ust 1995 Features Pinouts • Radiation Hardened - Total Dose > 10s RAD Si - Transient Upset > 108 RAD (Si)/s - Latch Up Free EPI-CMOS • Very Low Power Consumption

Contextual Info: RX4700 868.35 MHz ASH Receiver Ideal fo r 868.35 MHz, 3 V D ata Receivers in Europe High-Sensitivity Passive Design with No RF Oscillation Use with H X 4007for2.4 kbps D ata Rate Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint

Contextual Info: RX1300 418.0 MHz ASH Receiver Ideal fo r 418.0 MHz, 3 V D ata Receivers in the UK and the USA High-Sensitivity Passive Design with No RF Oscillation Baseband D ata Rate o f2400 bis Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint

Contextual Info: 1SMB2EZ6.8~1SMB2EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 2.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V

Contextual Info: RX2000 916.5 MHz ASH Receiver Ideal fo r 916.5 MHz, 3 V D ata Receivers in the USA and Canada Passive D esign with No RF Oscillation Baseband D ata Rate o f 2.4 kb/s Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint

Contextual Info: RX2020 916.5 MHz ASH Receiver • • Ideal f o r 916.5 M H z, 3 V D a ta R eceivers in Europe H igh-Sensitivity P assive D esign with N o R F O scillation Use with H X 2 0 0 0 fo r 19.2 kbps D a ta R ate Sim ple to A pply with E xternal P a rts Count •

Contextual Info: Tem ic Semiconductors Vehicle Area Network Data Link Controller TSS461C 1. Description Cost optimization in car manufacturing is of extreme importance today. Solutions to this problem often implies the use of more advanced and intelligent electronic circuits.

MLX81207

Abstract: 008MIN JESD22-B102 tray drawing tqfp 5x5 tray drawing tqfp 7x7
Contextual Info: MLX81205/07/10/15 Features Microcontroller: MLX16-FX RISC CPU o o o o 16 bit RISC CPU with 20DMIPS and Power-Saving-Modes Co-processor for fast multiplication and division Flash and EEPROM memory with EEC In-circuit debug and emulation Supported bus interfaces:

intersil DATE CODE MARKING

Abstract: intersil DaTE CODE intersil LOT TRACEABILITY MO-153-AB intersil PART MARKING ISL6406MREP ISL6406MREP-TK ISL6406MVEP ISL6406MVEP-TK TB347
Contextual Info: ISL6406MREP, ISL6406MVEP Data Sheet December 18, 2007 Enhanced Product EP Single Synchronous Buck Pulse-Width Modulation (PWM) Controller FN6613.0 Features • Specifications per DSCC VID V62/08610 The ISL6406MREP and ISL6406MVEP are adjustable frequency, synchronous buck switching regulators optimized

pj 0286

Abstract: pj 0279 pj+0286 pj 0266 iv
Contextual Info: WT-U7201SP Product Specification Specification Flux Material Quantity 32~42.5lm O @120mA / Ta= 25 C Tolerance±10% Chromaticity Refer to page 3~5 Coordinates @120mA / Ta= 25 C O Tolerance x, y± 0.005 Vf 2.7~3.6V 0.1V/bin O @120mA / Ta= 25 C Tolerance±0.05V