LOT CODE NE NEC Search Results

Contextual Info: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic

Contextual Info: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied GaAs HBT VCC GaAs MESFET N/C InGaP HBT

Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic

lot code RFMD

Abstract: ECB-101161
Contextual Info: SPA2118Z SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features Optimum Technology Matching Applied • VC1 VBIAS Active Bias SiGe BiCMOS GaAs pHEMT

transistor 1p3

Abstract: SXA3318B SXA3318BZ sirenza rfmd AH03L MCH18 SXA-3318B TAJB104KLRH TAJB106K020R L350
Contextual Info: SXA-3318B Z SXA-3318B(Z) 400MHz to 2500MHz Balanced ½ W Medium Power GaAs HBT Amplifier 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description Features Optimum Technology

Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT

an 214 amp schematic diagram

Abstract: ROHM MCR03 ECB-101161
Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features GaAs MESFET      InGaP HBT VC1 Si BiCMOS VBIAS SiGe HBT GaAs pHEMT RFIN Si CMOS Si BJT

MC 3041 opto

Abstract: 4N47A 548D 4N48U JANTXV 4N49 JANTXJANTXV 4N49U JANTX JANTXV 3041 OPTO 4N49 opto 4N47U JANTX federal isolator
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. MIL-PRF-19500/548D 8 June 2001 SUPERSEDING MIL-PRF-19500/548C 10 October 1997 PERFORMANCE SPECIFICATION COUPLER, OPTO ELECTRONIC, SEMICONDUCTOR DEVICE, SOLID STATE

RX2056

Contextual Info: RX2056 916.5 MHz ASH Receiver Ideal for 916.5 MHz, 3 V Data Receivers in the USA and Canada Passive Design with No RF Oscillation Use with HX2000for 19.2 kbps Data Rate Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint

hs82c54

Contextual Info: HS-82C85RH HARRIS S E M I C O N D U C T O R Radiation Hardened CMOS Static Clock Controller/Generator A ug ust 1995 Features Pinouts • Radiation Hardened - Total Dose > 10s RAD Si - Transient Upset > 108 RAD (Si)/s - Latch Up Free EPI-CMOS • Very Low Power Consumption

Contextual Info: RX4700 868.35 MHz ASH Receiver Ideal fo r 868.35 MHz, 3 V D ata Receivers in Europe High-Sensitivity Passive Design with No RF Oscillation Use with H X 4007for2.4 kbps D ata Rate Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint

Contextual Info: RX1300 418.0 MHz ASH Receiver Ideal fo r 418.0 MHz, 3 V D ata Receivers in the UK and the USA High-Sensitivity Passive Design with No RF Oscillation Baseband D ata Rate o f2400 bis Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint

Contextual Info: RX2000 916.5 MHz ASH Receiver Ideal fo r 916.5 MHz, 3 V D ata Receivers in the USA and Canada Passive D esign with No RF Oscillation Baseband D ata Rate o f 2.4 kb/s Simple to Apply with External Parts Count Rugged, Surface-Mount Package with 130 mm2 Footprint

Contextual Info: RX2020 916.5 MHz ASH Receiver • • Ideal f o r 916.5 M H z, 3 V D a ta R eceivers in Europe H igh-Sensitivity P assive D esign with N o R F O scillation Use with H X 2 0 0 0 fo r 19.2 kbps D a ta R ate Sim ple to A pply with E xternal P a rts Count •

intersil DATE CODE MARKING

Abstract: intersil DaTE CODE intersil LOT TRACEABILITY MO-153-AB intersil PART MARKING ISL6406MREP ISL6406MREP-TK ISL6406MVEP ISL6406MVEP-TK TB347
Contextual Info: ISL6406MREP, ISL6406MVEP Data Sheet December 18, 2007 Enhanced Product EP Single Synchronous Buck Pulse-Width Modulation (PWM) Controller FN6613.0 Features • Specifications per DSCC VID V62/08610 The ISL6406MREP and ISL6406MVEP are adjustable frequency, synchronous buck switching regulators optimized

pj 0286

Abstract: pj 0279 pj+0286 pj 0266 iv
Contextual Info: WT-U7201SP Product Specification Specification Flux Material Quantity 32~42.5lm O @120mA / Ta= 25 C Tolerance±10% Chromaticity Refer to page 3~5 Coordinates @120mA / Ta= 25 C O Tolerance x, y± 0.005 Vf 2.7~3.6V 0.1V/bin O @120mA / Ta= 25 C Tolerance±0.05V

Contextual Info: Preliminary GS8182S18D-250/200/167 SigmaRAM Family Overview me nd ed for Ne w GS8182S18 are built in compliance with the SigmaSIO-II SRAM pinout standard for Separate I/O synchronous SRAMs. They are 18,874,368-bit 18Mb SRAMs. These are the first in a family of wide, very low voltage HSTL I/O SRAMs designed

Contextual Info: WT-T5301SP Color for backlighting - White Product Specification Specification Flux Material Quantity 23.5-34.9lm O @120mA / Ta= 25 C Tolerance±10% Chromaticity Refer to page 6~8 Coordinates O Correlated Color @120mA / Ta= 25 C Temperature Tolerance x, y± 0.005

SMLE12BC7T

Abstract: TSZ22111
Contextual Info: Target Specification Part number Submission date SMLE12BC7T Date Month year 25 Apr 2007 Ms. T. Nakano Product Planning Dept LED Division PRODUCTS Surface Mo• ■t ChiD LED R口 Hm PAGE n町 SMLE12BC7T <SPecflca崎 o■s P鞭 / 口宜。■saコd Pttbib:付o■s >

Contextual Info: 3850 Group MITSUBISHI MICROCOMPUTERS SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION • P o w e r source voltage The 3850 group is the 8-bit m icrocom puter based on th e 740 fa m ­ In high-speed m o d e . 4.0 to 5.5 V

LVE111

Abstract: AGE2 AN1002 AN1003 AN1004 AN1005 AN1006 MC100LVE111 SK100E111 SK100LVE111
Contextual Info: SK100LVE111 1:9 Differential LVECL/LVPECL Clock Driver HIGH-PERFORMANCE PRODUCTS Description The SK100LVE111 is a low skew 1-to-9 differential driver designed with clock distribution in mind. The SK100LVE111’s function and performance are similar to the SK100E111, with the added feature of low

Full-bridge forward inverter

Abstract: 40N20
Contextual Info: 19-3177; Rev 1; 4/06 KIT ATION EVALU E L B A AVAIL High-Efficiency CCFL Backlight Controller with SMBus Interface The MAX8709B integrated backlight controller is optimized to drive cold-cathode fluorescent lamps CCFLs using a resonant full-bridge inverter architecture.

Rechargeable BATTERY AA 1.5V

Contextual Info: AOZ9004B Single-Cell Battery Protection IC with Integrated MOSFET General Description Features The AOZ9004B is a battery protection IC with integrated dual common-drain N-channel MOSFET. The device includes accurate voltage detectors and delay circuits, and is suitable for protecting single-cell lithium-ion / lithium-polymer rechargeable

Contextual Info: LM4674 LM4674 Filterless 2.5W Stereo Class D Audio Power Amplifier Te x a s In s t r u m e n t s Literature Number: SNAS344D Semiconductor t i o n a l LM4674 ^Boomer Audio Power Am plifier Series Filterless 2.5W Stereo Class D Audio Power Amplifier General Description