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VN0606L

Abstract: VN66AFD TN0601L
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46

SPN2054

Abstract: 10V 2A MOSFET N-channel 5V 2A MOSFET N-channel SPN2054T252RG mosfet gate source voltage 20v mosfet INVERTER applications
Contextual Info: SPN2054 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2054 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

SPP2301

Abstract: SPP2301S23RG
Contextual Info: SPP2301 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPP9437

Abstract: SPP9437S8RG SPP9437S8TG
Contextual Info: SPP9437 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9437 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

P-Channel MOSFET 12V SOT 23

Abstract: 12V 30A 3 pin mosfet mosfet vgs 5v 12V P-Channel Power MOSFET SPP2305 SPP2305S23RG 5V GATE TO SOURCE VOLTAGE MOSFET P-channel MOSFET VGS -25V
Contextual Info: SPP2305 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2305 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPP4953A

Abstract: SPP4953AS8RG SPP4953AS8TG
Contextual Info: SPP4953A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP4953A is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to

SPP3413

Abstract: SPP3413S23RG
Contextual Info: SPP3413 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN4392

Abstract: SPN4392S8RG SPN4392S8TG
Contextual Info: SPN4392 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4392 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN3406

Abstract: SPN3406S23RG RG615 ta7025
Contextual Info: SPN3406 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3406 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

P-channel power mosfet 30V

Abstract: SPP3403 SPP3403S23RG
Contextual Info: SPP3403 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

marking 30 dual mosfet

Abstract: dual mosfet "marking code 30" sot 26 Dual N-Channel MOSFET SPN6561 SPN6561S26RG 5V GATE TO SOURCE VOLTAGE MOSFET
Contextual Info: SPN6561 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

SPN2308

Abstract: MOSFET SPN2308S23RG 20V 1.5A MOSFET N-channel
Contextual Info: SPN2308 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2308 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN4346

Abstract: SPN4346S8RG SPN4346S8TG n-channel 2.5v mosfet mosfet 0018
Contextual Info: SPN4346 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4346 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN4920

Abstract: SPN4920S8RG SPN4920S8TG
Contextual Info: SPN4920 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4920 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to

SPN6562

Abstract: SOT-23-6L sot 26 Dual N-Channel MOSFET marking 30 dual mosfet SPN6562S26RG 5V GATE TO SOURCE VOLTAGE MOSFET
Contextual Info: SPN6562 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6562 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

sot 26 Dual N-Channel MOSFET

Abstract: SC-89-6 SPN1026 SPN1026S56RG Z/sot 26 Dual N-Channel MOSFET
Contextual Info: SPN1026 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1026 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while

Dual P-Channel mosfet sot-363

Abstract: SC-70-6L SPP6308 SPP6308S36RG
Contextual Info: SPP6308 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6308 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

MOSFET Drivers 40V

Abstract: Dual N-Channel mosfet sot-363 SC-70-6L SPN6435 SPN6435S36RG sot 26 Dual N-Channel MOSFET sot-363 n-channel mosfet
Contextual Info: SPN6435 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6435 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while

Contextual Info: TAK CHEONG SEM ICON DU CTO R 8A, 500V, 0.9Ω 1 = Gate 2 = Drain 3 = Source General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced

SC-70-6L

Abstract: SPC6332 SPC6332S36RG power mosfet 5a 20v
Contextual Info: SPC6332 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6332 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

SPC4539

Abstract: SPC4539S8RG SPC4539S8TG N and P MOSFET
Contextual Info: SPC4539 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC4539 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state

S1217

Abstract: TO-92-18RM
Contextual Info: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS (V) RDS(on) () VGS(th) (A) 240 4 at VGS = 10 V 0.8 to 2 ID (A) 0.2 TN2404K TN2404K, BS107KL • • • • • Qg (Typ.) 0.3 4.87 nC Low On-Resistance: 4 

CRCW08051000FKTA

Abstract: MHV5IC2215N J088 TAJA105K035R 01145 A113 A114 A115 AN1955 AN1987
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHV5IC2215N Rev. 3, 1/2007 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC2215NR2 wideband integrated circuit is designed for base station applications. It uses Freescale’s High Voltage 28 Volts LDMOS IC

LM388

Contextual Info: LM3880 Power Sequencer General Description Features The LM3880 Power Sequencer offers the easiest method to control power up and power down of multiple power supplies switchers or linear regulators . By staggering the startup sequence, it is possible to avoid latch conditions or large in-rush